Studies on the opto-electronic properties of III–V and II–VI group semiconductors from optical electronegativities

Abstract

New empirical relations have been proposed to evaluate bond energies (E_s) in compound semiconductors, first from the knowledge of optical electronegativities of the constituent ions and secondly from the energy gap values. The validity of the two relations has been tested in the case of certain III–V and II–VI group semiconductors by comparing the calculated values of E_s, with those in the literature. From the computed values of E_s, refractive indices have been calculated. The Penn gap (E_p), Fermi energy (E_F) and S_o-parameter for these semiconductors have also been determined. The estimated values of these parameters are utilized to evaluate the electronic polarizabilities (α). The computed values of a compare excellently with the standard data.