{"title":"Resistorless memcapacitor emulator","authors":"Pratik Kumar, Garima Shukla, Sajal K. Paul","doi":"10.1007/s10470-026-02596-0","DOIUrl":"10.1007/s10470-026-02596-0","url":null,"abstract":"<div><p>This paper proposes a new design for realizing high-frequency memcapacitor emulators built with three OTAs and two capacitors. The proposed memcapacitor circuit is resistorless. The proposed circuits can be configured in both incremental and decremental topology. The applications of proposed memcapacitor circuit as an amplitude modulator, point attractors, and periodic doublers are illustrated. The proposed circuits and their applications claim that it is simple in design and can be utilized in both topologies. The performance of all the proposed circuits has been verified on Cadence Virtuoso Spectre using standard CMOS 180 nm. Furthermore, non-ideal analysis, Monte Carlo simulation, and post-layout simulations have been carried out. Moreover, experimental results are presented to verify the workability of the proposed circuits.</p></div>","PeriodicalId":7827,"journal":{"name":"Analog Integrated Circuits and Signal Processing","volume":"127 2","pages":""},"PeriodicalIF":1.4,"publicationDate":"2026-05-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147829404","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Design and analysis of gate underlapped GOI junctionless FinFET in presence of temperature variations for RF IC design applications","authors":"Arnab Som, Meenu Yadav, Sanjay Kumar Jana","doi":"10.1007/s10470-026-02593-3","DOIUrl":"10.1007/s10470-026-02593-3","url":null,"abstract":"<div><p>Recently junctionless transistors have gained popularity due to lower fabrication complexity than conventional physically doped transistors. In this work, we have presented gate underlapped GaAs on insulator (GOI) Junctionless(JL) FinFET considering 20nm channel length. The gate underlap engineering has been performed at both the source side and the drain side to improve key short channel effects like leakage current and sub-threshold swing. The DC performances of the proposed device are compared with the conventional Silicon-based SOI JL FinFET and the proposed device provides significant improvement in terms of <span>(text {I}_text {ON})</span>(76%), <span>(text {I}_text {OFF})</span>(3255 times), <span>(text {I}_text {ON})</span>/<span>(text {I}_text {OFF})</span>( 13895 times), and SS (5.80%) than the conventional Silicon-based SOI JL FinFET. The Analog/RF Figures of Merits such as Transconductance, Cut-off frequency, Gain-Bandwidth Product, Transit time, Transconductance Generation Factor, and Transconductance Frequency Product of the proposed device are studied considering the impact of temperature variations from 300K to 500K. Furthermore, several linearity parameters such as higher-order transconductances (<span>(text {g}_text {m2})</span>,<span>(text {g}_text {m3})</span>) and voltage intersection points (VIP2, VIP3) of the proposed device are evaluated for a wide range of temperature variations. In addition, the circuit-level performances are also investigated by designing the proposed device-based Current-Starved Voltage Controlled Oscillator (CS VCO) using the Cadence Virtuoso tool. The proposed FinFET-based CS VCO provides a wider tuning range of 99% which is 8% better than other recently published work. The proposed device-based CS VCO also provides a higher VCO gain of 9.91 GHz/V. Thus, the proposed device can be better suitable for Radio-Frequency circuit-level applications.</p></div>","PeriodicalId":7827,"journal":{"name":"Analog Integrated Circuits and Signal Processing","volume":"127 2","pages":""},"PeriodicalIF":1.4,"publicationDate":"2026-05-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147829313","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Design of high performance capacitorless 1T-DRAM with PDSOI-UTB FinFET","authors":"Mitali Rathi, Guru Prasad Mishra","doi":"10.1007/s10470-026-02588-0","DOIUrl":"10.1007/s10470-026-02588-0","url":null,"abstract":"<div><p>Partially depleted silicon on Insulator ultra-thin body (PDSOI-UTB) FinFET based Capacitorless 1 T-DRAM is designed and simulated. The PDSOI and UTB region of the proposed FinFET device is working as floating region and is utilised for storing holes for the application of Capacitorless 1 T-DRAM. The holes are primarily generated by high-impact ionization occurring at the channel-drain junction. The PDSOI region is surrounded by low-k isolation dielectric oxide, which provides isolation between all the active regions. Hence, capacitive coupling between PDSOI region, gate, and UTB region is reduced. This increases the sensing margin of the device. The proposed device has several more advantages like low fabrication cost, low power consumption, very high sensing margin (~ 100 µA), retention time (> 64 ms) and high speed (~ 10 ns) write and read operations.</p></div>","PeriodicalId":7827,"journal":{"name":"Analog Integrated Circuits and Signal Processing","volume":"127 2","pages":""},"PeriodicalIF":1.4,"publicationDate":"2026-05-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147829314","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Binary wind driven optimization techniques for Metamaterial Cross Polarizer","authors":"Chetan Barde, Prakash Ranjan, Neelesh Kumar Gupta, Arvind Choubey, Komal Roy","doi":"10.1007/s10470-026-02587-1","DOIUrl":"10.1007/s10470-026-02587-1","url":null,"abstract":"<div><p>This article presents synthesized Metamaterial Cross Polarizer (MCP) using Binary Wind Driven Optimization (BWDO) technique. BWDO is an advance version of WDO techniques. To achieve wideband response uttermost number of iterations is done at the time of synthesis. The wideband responses below − 10 dB is considered as a bandwidth and its ranges from 7.56 to 11.94 GHz. To achieve best response 50 number of iterations has to be performed. The Polarization Conversion Ratio (PCR) is considered at three distinct peaks i.e., at 8.3, 10.6 and 11.9 GHz with 99.87, 98.93 and 96.71% respectively. For explaining polarization conversion mechanism two different techniques is discussed in this article. The first technique is explained using the effective Electromagnetic (EM) parameters, i.e., <span>(:{varvec{epsilon:}}_{varvec{e}varvec{f}varvec{f}})</span> & <span>(:{varvec{mu:}}_{varvec{e}varvec{f}varvec{f}})</span>, whereas the second technique is explained using current distribution. The structure is mounted on dielectric substrate (FR-4). The mounted structure is tested and measured inside the anechoic chamber. The measured result obtained from the chamber are in close agreement with the simulated one which slightly differs due to fabrication tolerance. At last, the presented MCP structure is compared with the past articles and listed in the form of a table.</p></div>","PeriodicalId":7827,"journal":{"name":"Analog Integrated Circuits and Signal Processing","volume":"127 2","pages":""},"PeriodicalIF":1.4,"publicationDate":"2026-05-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147829379","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"FPGA-based implementation of the mechanization block","authors":"A. Aboutalebi, H. Alaeiyan, M. R. Mosavi","doi":"10.1007/s10470-026-02595-1","DOIUrl":"10.1007/s10470-026-02595-1","url":null,"abstract":"<div><p>The Inertial Navigation System (INS) is a device that uses a computing unit, motion sensors (accelerometers), and rotation sensors (gyroscopes) to compute the position, orientation, and velocity of a moving object without external reference. The INS consists of two main components: the Inertial Measurement Unit (IMU) and the mechanization. In this way, mechanization block can be implemented on hardware separately. Field-Programmable Gate Array (FPGA) technology offers high processing speed, enhanced system performance, parallel data processing, scalability, and other benefits such as implementing denoising. Hence, this paper aims to implement the hardware mechanization and low-weight denoising method (Lifting Wavelet Transform (LWT)) on the FPGA platform. The data entry rate is 10 ms, the mechanization block processing time and update time are 8.438 us and 3.37 us, respectively. The mechanization RMSE is also like 2.16e-6 for latitude and 2.82e-06 for longitude, in Radian.</p></div>","PeriodicalId":7827,"journal":{"name":"Analog Integrated Circuits and Signal Processing","volume":"127 2","pages":""},"PeriodicalIF":1.4,"publicationDate":"2026-05-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147829692","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Power-aware test pattern generation with LP-LFSRs and counter-assisted gray code for VLSI BIST","authors":"C. Thangam, R. Manjith","doi":"10.1007/s10470-026-02586-2","DOIUrl":"10.1007/s10470-026-02586-2","url":null,"abstract":"<div>\u0000 \u0000 <p>In Very Large Scale Integrated Circuits, the Built in Self-Test (BIST) is intended to minimize power consumption while providing fault coverage. Weighted pseudorandom (W-Pr) BIST mechanism is employed to minimize the several vectors requirement for attaining entire fault coverage. The weights 0, 0.5 and 1 are included in the weight sets so far to create test patterns for reducing the duration of testing and amount of energy consumed. LP-LFSRs, or Low Power Linear Feedback Shift Registers, are used in this study for creating test patterns. A single input change (SIC) pattern is created when seeds from an LP-LFSR are Exclusive ORed with a Grey code (GC) generator and counter. The inclusion of accumulators, which are widely found in current VLSI chips, effectively lowers the amount of hardware needed for the production of BIST patterns when using this technique. Modelism 6.4c is used to validate the suggested technique and Verilog HDL is used to simulate it. The simulation results exhibit that the power consumed for testing utilizing the recommended architecture is significantly decreased.</p>\u0000 </div>","PeriodicalId":7827,"journal":{"name":"Analog Integrated Circuits and Signal Processing","volume":"127 2","pages":""},"PeriodicalIF":1.4,"publicationDate":"2026-05-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147829691","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Kaizhuo Chen, Zhiwei Huang, Chongzhuo Zhao, Chuanxin Teng, Ming Chen, Libo Yuan, Shijie Deng
{"title":"High precision time-to-digital converter chip design based on cycle and average logic","authors":"Kaizhuo Chen, Zhiwei Huang, Chongzhuo Zhao, Chuanxin Teng, Ming Chen, Libo Yuan, Shijie Deng","doi":"10.1007/s10470-026-02589-z","DOIUrl":"10.1007/s10470-026-02589-z","url":null,"abstract":"<div>\u0000 \u0000 <p>In this work, a three-stage Time-to-digital converter (TDC) based on the average measurement in the system is proposed for ranging. The ranging chip needs to provide 20 MHz reference clock signal externally, which is doubled to 1 GHz through the Phase-Locked Loop (PLL) circuit and sent to TDC to provide stable high frequency reference clock signal for the circuit. The circuit uses PLL cascaded oscillator units to generate multiple clock signals and vernier delay structures to construct two-stage interpolation. During the measurement process, the input signal is allocated to different channels of the TDC for multiple measurements and averaging. This not only reduces the random error caused by clock jitter due to noise, but also improves the utilization of TDC channels. The chip is based on X-Fab 0.18 μm CMOS process, the core TDC layout area is 500 μm × 350 μm, the power consumption is about 16.55 mW, and the resolution is 14 ps. Analysis of the results of the post-simulation shows that the differential nonlinear peak is less than 0.4 LSB, and the integral nonlinear peak is less than 0.6 LSB. The dynamic range can increase the number of high-segment counter bits according to the needs of actual application scenarios. High measurement accuracy, linearity and wide dynamic range are achieved.</p>\u0000 </div>","PeriodicalId":7827,"journal":{"name":"Analog Integrated Circuits and Signal Processing","volume":"127 2","pages":""},"PeriodicalIF":1.4,"publicationDate":"2026-04-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147796806","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Analog circuit fault diagnosis based on feature attention","authors":"Xianjun Du, Yan Yin, Lei Cao, Shengyi Cheng","doi":"10.1007/s10470-026-02590-6","DOIUrl":"10.1007/s10470-026-02590-6","url":null,"abstract":"<div>\u0000 \u0000 <p>Aiming at the troubles of effective extraction of fault features, large model calculation, low-accuracy diagnosis and poor stability, this work proposes an analog circuit fault diagnosis method that is based on an improved CNN-Transformer model. To achieve comprehensive and effective extraction of fault features, one-dimensional convolution is implemented to obtain the local features in the data, and multi-head attention is employed to catch the global features. A Sallen-Key band-pass filter, a fourth-order state-variable filter and a Butterworth low-pass filter circuits are applied as the experimental subjects for comparison to verify the effectiveness and advancement of the proposed CNN-Transformer method. The results indicate that of the presented CNN-Transformer model is able to effectively enhance diagnostic accuracy and stability, achieve accurate diagnosis and localization of circuit fault components, which could be a helpful reference for engineering practice in analog circuit fault diagnosis.</p>\u0000 </div>","PeriodicalId":7827,"journal":{"name":"Analog Integrated Circuits and Signal Processing","volume":"127 2","pages":""},"PeriodicalIF":1.4,"publicationDate":"2026-04-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147797175","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Improving operational efficiency in photovoltaic systems with advanced fault monitoring solutions using machine learning algorithms","authors":"N Vijayasarathi, Vijay Ravindran","doi":"10.1007/s10470-026-02597-z","DOIUrl":"10.1007/s10470-026-02597-z","url":null,"abstract":"<div><p>As photovoltaic (PV) systems become used widely, reliability and efficiency improvements are essential. Faults caused in the PV systems could produce energy losses up to 20% yearly. Fault detection is essential to diminish these losses and maintain the system efficiently. This work focuses on machine learning for reliable and accurate detection of faults in PV systems. The work proposes Gradient Boosted Decision Tree (GBDT) algorithms with ensemble method to identify arc faults, line to line faults and open circuit faults using real time data collected from voltage, current and irradiance sensors. GBDT integrates with ensemble methods to improve predictive performance and reliability. Both training and testing of this model were performed with the dataset. After trained, the framework is deployed on a web server for instantaneous fault condition monitoring. Also, the data for the algorithm was generated using MATLAB/Simulink simulations under different operating conditions to validate the datasets. Experimental results shown that the design achieving 100% accuracy during training and 98.54% accuracy during testing on randomly split datasets. If any fault occurs, the notification mail or Message will be sent to the user, provided the fault details through the server. These findings exhibit the framework potential to considerably improve the reliability and efficiency of PV systems in real world developments.</p></div>","PeriodicalId":7827,"journal":{"name":"Analog Integrated Circuits and Signal Processing","volume":"127 2","pages":""},"PeriodicalIF":1.4,"publicationDate":"2026-04-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147796807","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"A comprehensive review and multi-parameter analysis of CMOS double-balanced Gilbert cell mixers across technology nodes from 180-22 nm","authors":"Richa Gupta, P. Hari Krishna Prasad","doi":"10.1007/s10470-026-02585-3","DOIUrl":"10.1007/s10470-026-02585-3","url":null,"abstract":"<div><p>This review examines how the design philosophy of double-balanced CMOS Gilbert cell mixers changes as technologies scale, rather than assuming that scaling alone leads to uniform performance improvement. Reported mixer implementations spanning mature 180 nm CMOS to 22 nm fully depleted silicon-on-insulator (FD-SOI) technologies are analyzed to identify cross-technology trends in conversion gain, noise figure (NF), linearity, and power consumption that are not apparent from node-specific or technique-focused studies. The review shows that, in advanced CMOS nodes, reduced voltage headroom, parasitic-dominated behavior, device variability, and flicker noise place practical limits on conventional mixer architectures. As a result, many of the performance gains reported in scaled technologies arise from architectural adaptation and biasing strategy rather than from transistor scaling itself. Examples include modification or removal of the transconductance stage, the use of passive or hybrid mixing approaches, and systematic <span>(g_m/I_D)</span>-based device sizing. By linking circuit-level behavior with system-level considerations such as robustness, process–voltage–temperature (PVT) sensitivity, and system-on-chip (SoC) integration, this review explains why modern mixer designs often accept reduced standalone analog performance in favor of energy efficiency, predictability, and receiver-level optimization. The resulting synthesis provides RFIC designers and system architects with a technology-aware perspective for selecting and adapting Gilbert cell mixer architectures in deeply scaled CMOS technologies.</p></div>","PeriodicalId":7827,"journal":{"name":"Analog Integrated Circuits and Signal Processing","volume":"127 2","pages":""},"PeriodicalIF":1.4,"publicationDate":"2026-04-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147738598","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}