2021 IEEE Applied Power Electronics Conference and Exposition (APEC)最新文献_第10页

Overcurrent Capability Evaluation of 600 V GaN GITs under Various Time Durations 不同时间下600v GaN GITs过流能力评价

2021 IEEE Applied Power Electronics Conference and Exposition (APEC) Pub Date : 2021-06-14 DOI: 10.1109/APEC42165.2021.9487155

Zhe Yang, P. Williford, Fred Wang, Utkarsh Raheja, Jing Xu, Xiaoqing Song, P. Cairoli

引用次数: 1

3-D Physical Model for On-chip Power Inductor Design with Evaluation of Airgap Variation Effect 片上功率电感设计的三维物理模型及气隙变化效应评估

2021 IEEE Applied Power Electronics Conference and Exposition (APEC) Pub Date : 2021-06-14 DOI: 10.1109/APEC42165.2021.9487062

Zhiyong Xia, J. A. Abu Qahouq, S. Kotru

引用次数: 3

Robustness of Cascode GaN HEMTs under Repetitive Overvoltage and Surge Energy Stresses 级联GaN hemt在重复过电压和浪涌能量应力下的鲁棒性

2021 IEEE Applied Power Electronics Conference and Exposition (APEC) Pub Date : 2021-06-14 DOI: 10.1109/APEC42165.2021.9487252

Q. Song, Ruizhe Zhang, J. P. Kozak, Jingcun Liu, Qiang Li, Yuhao Zhang

{"title":"Robustness of Cascode GaN HEMTs under Repetitive Overvoltage and Surge Energy Stresses","authors":"Q. Song, Ruizhe Zhang, J. P. Kozak, Jingcun Liu, Qiang Li, Yuhao Zhang","doi":"10.1109/APEC42165.2021.9487252","DOIUrl":"https://doi.org/10.1109/APEC42165.2021.9487252","url":null,"abstract":"Surge energy robustness is essential for power semiconductor devices in many power electronics applications, such as automotive powertrains and electrical grids. Si and SiC MOSFETs can dissipate surge energy via avalanche. However, GaN high-electron-mobility-transistor (HEMT) has no avalanche capability. Recent studies have investigated the surge energy robustness of p-gate GaN HEMTs, revealing a capacitive-charging-based withstanding process. The degradation of p-gate GaN HEMT under repetitive surge energy stresses has also been reported. This work, for the first time, studies the repetitive surge energy robustness of a 650-V rated cascode GaN HEMT in the unclamped inductive switching (UIS) test. The cascode GaN HEMT shows a lower failure boundary under the repetitive UIS stress than the one under the single UIS stress. When the surge energy approaches the repetitive failure boundary, devices do not fail immediately but within limited cycles of stress. Devices were found to survive 1 million UIS cycles when the peak UIS voltage is reduced to ~80% of the failure boundary, but show considerable parametric shifts after the repetitive stress, including an on-resistance (RDS(ON)) increase during both forward and reverse conductions, a reduction in the off-state drain leakage current (IDSS), and a negative shift of the drain-to-source capacitance (CDS). These behaviors of device failure and degradation under repetitive UIS stresses can be explained by the buffer trapping accumulation in GaN HEMTs, which may lead to a reduction of the device dynamic breakdown voltage. This physical explanation has also been validated by physics-based TCAD simulation.","PeriodicalId":7050,"journal":{"name":"2021 IEEE Applied Power Electronics Conference and Exposition (APEC)","volume":"67 1","pages":"363-369"},"PeriodicalIF":0.0,"publicationDate":"2021-06-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76231659","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 8

High-Bandwidth Shielded Rogowski Coil Current Sensor for SiC MOSFET Power Module SiC MOSFET功率模块的高带宽屏蔽Rogowski线圈电流传感器

2021 IEEE Applied Power Electronics Conference and Exposition (APEC) Pub Date : 2021-06-14 DOI: 10.1109/APEC42165.2021.9487370

Wen Zhang, Fred Wang, B. Holzinger

引用次数: 2

Monolithic Integration of a 5-MHz GaN Half-Bridge in a 200-V GaN-on-SOI Process: Programmable dv/dt Control and Floating High-Voltage Level-Shifter 200v GaN-on- soi制程中5mhz GaN半桥的单片集成:可编程dv/dt控制和浮动高压电平移位器

2021 IEEE Applied Power Electronics Conference and Exposition (APEC) Pub Date : 2021-06-14 DOI: 10.1109/APEC42165.2021.9487430

Wan Lin Jiang, Samantha Kadee Murray, M. S. Zaman, H. De Vleeschouwer, J. Roig, P. Moens, O. Trescases

引用次数: 12

A Novel Auxiliary Resonant Commutated Pole Soft-switching Inverter 一种新型辅助谐振换相极软开关逆变器

2021 IEEE Applied Power Electronics Conference and Exposition (APEC) Pub Date : 2021-06-14 DOI: 10.1109/APEC42165.2021.9487038

Wenkang Gong, S. Pan, Wenqiang Lin, Jinwu Gong, Yuan Shang

引用次数: 0

Lyapunov Function-Based Stabilizing Control Scheme for Wireless Power Transfer Systems with LCC Compensation Network 基于Lyapunov函数的LCC补偿网络无线输电系统稳定控制方案

2021 IEEE Applied Power Electronics Conference and Exposition (APEC) Pub Date : 2021-06-14 DOI: 10.1109/APEC42165.2021.9487420

Abu Shahir Md. Khalid Hasan, I. Bhogaraju, M. Farasat, Michael A. Malisoff

引用次数: 0

An Automotive-Use 5MHz, 40V to 1.2V, Single-Stage AOT GaN DC-DC Converter with One-Cycle Transient Response and Load-Adaptive Dead Time Control 汽车用5MHz, 40V至1.2V，单级AOT GaN DC-DC变换器，单周期瞬态响应和负载自适应死区时间控制

2021 IEEE Applied Power Electronics Conference and Exposition (APEC) Pub Date : 2021-06-14 DOI: 10.1109/APEC42165.2021.9487183

Xugang Ke, D. Brian Ma

{"title":"An Automotive-Use 5MHz, 40V to 1.2V, Single-Stage AOT GaN DC-DC Converter with One-Cycle Transient Response and Load-Adaptive Dead Time Control","authors":"Xugang Ke, D. Brian Ma","doi":"10.1109/APEC42165.2021.9487183","DOIUrl":"https://doi.org/10.1109/APEC42165.2021.9487183","url":null,"abstract":"To achieve a fast load transient response time in a switching power converter, constant on-time (COT) hysteretic mode control has been reported recently. However, due to the limitations on fixed on-time and mandatory minimum off-time, sluggish response and large voltage over-/undershoot are severe during extreme load transient scenarios. This paper presents a load transient enhance scheme which achieves adaptive on-time (AOT) transient response promptly and within one switching cycle, through instantaneous load change (∆IO) sensing technique. Based on the AOT control, a single-stage Gallium Nitride (GaN) based DC-DC converter is designed. Because a GaN switch inherently has no body diode and thus shows a high reverse conduction voltage, the efficiency is degraded with excessively long dead time (tdead). Accordingly, a sample-and-hold (S/H) based closed-loop dead time control is proposed to regulate tdead adaptively according to instantaneous input voltage (VIN) and IO. The converter is implemented using a 0.35-µm high voltage (HV) BCD process, accomplishing the DC-DC voltage conversion from 40 to 1.2V at 5MHz. In response to load steps between 0.5A and 10A, it achieves a 49mV/29mV VO undershoot/overshoot within one switching cycle. Thanks to the adaptive dead time control, the efficiency is improved by 4.8% at light load and 1.5% at heavy load, respectively, with a peak value of 89.5%.","PeriodicalId":7050,"journal":{"name":"2021 IEEE Applied Power Electronics Conference and Exposition (APEC)","volume":"47 1","pages":"513-516"},"PeriodicalIF":0.0,"publicationDate":"2021-06-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81585318","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 3

Developing Soft Switching in Solid-State Circuit Breakers 固态断路器软开关的发展

2021 IEEE Applied Power Electronics Conference and Exposition (APEC) Pub Date : 2021-06-14 DOI: 10.1109/APEC42165.2021.9487219

R. Kheirollahi, Zhonghao Dongye, Hua Zhang, Shuyan Zhao, F. Lu

引用次数: 1

A Modified Droop Control Algorithm for DC Microgrids to Achieve Accurate Current Sharing and Improved Voltage Regulation 一种改进的直流微电网下垂控制算法以实现精确的电流共享和改进的电压调节

2021 IEEE Applied Power Electronics Conference and Exposition (APEC) Pub Date : 2021-06-14 DOI: 10.1109/APEC42165.2021.9487092

Shrivatsal Sharma, V. Iyer, P. Das, S. Bhattacharya

{"title":"A Modified Droop Control Algorithm for DC Microgrids to Achieve Accurate Current Sharing and Improved Voltage Regulation","authors":"Shrivatsal Sharma, V. Iyer, P. Das, S. Bhattacharya","doi":"10.1109/APEC42165.2021.9487092","DOIUrl":"https://doi.org/10.1109/APEC42165.2021.9487092","url":null,"abstract":"Droop control is a commonly used method for load current sharing among the converters in DC microgrid applications. However, in this method, the current sharing and load voltage regulation are affected by cable resistances and other non-idealities. The conventional droop control method’s performance can be improved using secondary control algorithms that involve low-bandwidth communication channels. In this paper, an improved secondary control algorithm is proposed for a multi-source, single load bus DC microgrid system. In the proposed algorithm, the load voltage information is communicated to the individual converters, and there are no communication channels between individual converters. Thus the proposed algorithm achieves accurate current sharing and improved load voltage regulation with reduced communication channels compared to several state-of-the-art approaches. All the controllers in the proposed algorithm are implemented locally, and hence a decentralized control is achieved. The proposed algorithm’s effectiveness is validated using circuit simulations and hardware-based experiments on a two converter single load bus DC microgrid system.","PeriodicalId":7050,"journal":{"name":"2021 IEEE Applied Power Electronics Conference and Exposition (APEC)","volume":"8 1","pages":"119-125"},"PeriodicalIF":0.0,"publicationDate":"2021-06-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"87791574","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 4