2021 IEEE Applied Power Electronics Conference and Exposition (APEC)最新文献_第10页

Bar-Wound Machine Voltage Stress: a Method for 2D FE Modeling and Testing 棒绕机电压应力:一种二维有限元建模与测试方法

2021 IEEE Applied Power Electronics Conference and Exposition (APEC) Pub Date : 2021-06-14 DOI: 10.1109/APEC42165.2021.9487103

Brennan Kelly, Julia Zhang, Luke Chen

{"title":"Bar-Wound Machine Voltage Stress: a Method for 2D FE Modeling and Testing","authors":"Brennan Kelly, Julia Zhang, Luke Chen","doi":"10.1109/APEC42165.2021.9487103","DOIUrl":"https://doi.org/10.1109/APEC42165.2021.9487103","url":null,"abstract":"Advancements in semiconductor technology present new challenges in electric machine construction, operation and control. Silicon carbide (SiC)-based power electronics are becoming the new standard for high-power consumer and commercial devices, and are implemented in technologies such as power inverters, converters and rectifiers. This paper focuses on the effects of inverter drives for traction motors in electric vehicles with high dV/dt rates on bar-wound machine windings, including the expected impacts on insulation materials under prolonged periods of high voltage stress. A simulation model was constructed using finite element analysis, the results of which were validated with experimental results using a commercially available SiC inverter and traction motor. The results presented in the analysis pertain mostly to a single phase of a three-phase IPMSM in order to reduce simulation and testing complexity and runtime, so that the accuracy of the simulation in relation to the physical model can be demonstrated before proceeding to three-phase analysis. Some three-phase testing and analysis is also included. Correlation has been established between the preliminary simulation results and experimental data. It is proven that as DC bus voltages increase with the capabilities of SiC devices, the voltage stresses inside the stator windings approach levels which could cause partial discharge and premature insulation degradation in existing stator designs.","PeriodicalId":7050,"journal":{"name":"2021 IEEE Applied Power Electronics Conference and Exposition (APEC)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2021-06-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"89077199","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 3

Gate Driver Concept for Parallel Operation of Low-Voltage High-Current GaN Power Transistors for Mild-Hybrid Applications 用于轻度混合应用的低压大电流GaN功率晶体管并联工作的栅极驱动器概念

2021 IEEE Applied Power Electronics Conference and Exposition (APEC) Pub Date : 2021-06-14 DOI: 10.1109/APEC42165.2021.9487194

Dominik Koch, Julian Weimer, Mathias C. J. Weiser, Jan Hueckelheim, I. Kallfass

{"title":"Gate Driver Concept for Parallel Operation of Low-Voltage High-Current GaN Power Transistors for Mild-Hybrid Applications","authors":"Dominik Koch, Julian Weimer, Mathias C. J. Weiser, Jan Hueckelheim, I. Kallfass","doi":"10.1109/APEC42165.2021.9487194","DOIUrl":"https://doi.org/10.1109/APEC42165.2021.9487194","url":null,"abstract":"In this work experimental and simulative proof of a concept for paralleling low voltage and high current Gallium Nitride (GaN) transistors each with a distinct gate booster is presented. For both high-side (HS) and low-side (LS), two 100V 5mΩ normally-off GaN-HEMTs are operated with a driver, which offers separate paths for turn-on and turn-off. In combination with the Kelvin source a minimal gate-loop inductance and stable switching operation is achieved. The HS and LS signals are provided by an isolated half-bridge driver with ultra-low jitter and identical PCB path lengths to ensure equal propagation delay. The half-bridge with paralleled GaN-HEMTs, which is approved by full-wave S-parameter extraction in combination with a comprehensive thermal simulation and a transient simulation based on a physical GaN model, is operated in a 300kHz48V-to-24V buck converter operation up to 54A output current with an overall efficiency of above 95%. The output power of the converter is mainly limited by the thermal performance of the packaging and the PCB and the single gate-contact of the transistors, which is reducing the degrees of freedoms in the layout and introducing significant common source and parasitic inductances.","PeriodicalId":7050,"journal":{"name":"2021 IEEE Applied Power Electronics Conference and Exposition (APEC)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2021-06-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85940642","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 4

Noise Immunity of Desat Protection Circuitry for High Voltage SiC MOSFETs with High dv/dt 高dv/dt高压SiC mosfet防沙保护电路的抗扰性

2021 IEEE Applied Power Electronics Conference and Exposition (APEC) Pub Date : 2021-06-14 DOI: 10.1109/APEC42165.2021.9487072

Xingxuan Huang, Shiqi Ji, Cheng Nie, Dingrui Li, Min Lin, L. Tolbert, Fred Wang, William Giewont

引用次数: 3

A Current-fed High Gain Multilevel DC-DC Converter for BESS Grid Integration Applications 用于BESS电网集成的电流馈电高增益多电平DC-DC变换器

2021 IEEE Applied Power Electronics Conference and Exposition (APEC) Pub Date : 2021-06-14 DOI: 10.1109/APEC42165.2021.9487339

Vinay Rathore, K. Rajashekara, Anindya Ray, L. A. G. Rodriguez, Jacob A. Mueller

{"title":"A Current-fed High Gain Multilevel DC-DC Converter for BESS Grid Integration Applications","authors":"Vinay Rathore, K. Rajashekara, Anindya Ray, L. A. G. Rodriguez, Jacob A. Mueller","doi":"10.1109/APEC42165.2021.9487339","DOIUrl":"https://doi.org/10.1109/APEC42165.2021.9487339","url":null,"abstract":"This paper presents a new high gain, multilevel, bidirectional DC-DC converter for interfacing battery energy storage systems (BESS) with the distribution grid. The proposed topology employs a current-fed structure on the low-voltage (LV) BESS side to obtain high voltage gain during battery-to-grid mode of operation without requiring a large turns ratio isolation transformer. The high-voltage (HV) side of the converter is a voltage-doubler network comprising two half-bridge circuits with an intermediary bidirectional switch that re-configures the two bridges in series connection to enhance the boost ratio. A seamless commutation of the transformer leakage inductor current is ensured by the phase-shift modulation of HV side devices. The modulating duty cycle of the intermediary bidirectional devices generates a multilevel voltage of twice the switching frequency at the grid-side dc link, which significantly reduces the filter size. The presented modulation strategy ensures zero current switching (ZCS) of the LV devices and zero voltage switching (ZVS) of the HV devices to achieve a high power conversion efficiency. Design and operation of the proposed converter is explained with modal analysis, and further verified by detailed simulation results.","PeriodicalId":7050,"journal":{"name":"2021 IEEE Applied Power Electronics Conference and Exposition (APEC)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2021-06-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"86444761","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 2

Re-analysis on ZVS Condition for LLC Converter LLC变流器ZVS工况再分析

2021 IEEE Applied Power Electronics Conference and Exposition (APEC) Pub Date : 2021-06-14 DOI: 10.1109/APEC42165.2021.9487400

Haibin Song, Daofei Xu, A. Zhang

引用次数: 1

A Hybrid Modular DC-DC Converter Topology for Hybrid Interlink in HVDC 一种用于HVDC混合互连的混合模块化DC-DC变换器拓扑结构

2021 IEEE Applied Power Electronics Conference and Exposition (APEC) Pub Date : 2021-06-14 DOI: 10.1109/APEC42165.2021.9487421

Saurav Dey, T. Bhattacharya

引用次数: 4

Low-cost Compact Approach to Reinforced Isolated Drive for LLC Converters LLC变换器强化隔离驱动的低成本紧凑型方法

2021 IEEE Applied Power Electronics Conference and Exposition (APEC) Pub Date : 2021-06-14 DOI: 10.1109/APEC42165.2021.9487208

Edgaras Mickus, Trong Tue Vu

引用次数: 0

3D LEGO-PoL: A 93.3% Efficient 48V-1.5V 450A Merged-Two-Stage Hybrid Switched-Capacitor Converter with 3D Vertical Coupled Inductors 3D LEGO-PoL: 93.3%效率48V-1.5V 450A合并两级混合开关电容器转换器与3D垂直耦合电感

2021 IEEE Applied Power Electronics Conference and Exposition (APEC) Pub Date : 2021-06-14 DOI: 10.1109/APEC42165.2021.9487080

J. Baek, Youssef Elasser, Minjie Chen

引用次数: 5

Design and Implementation of an Integrated Planar Transformer for High-Frequency LLC Resonant Converters 用于高频LLC谐振变换器的集成平面变压器的设计与实现

2021 IEEE Applied Power Electronics Conference and Exposition (APEC) Pub Date : 2021-06-14 DOI: 10.1109/APEC42165.2021.9487046

Yu-Chen Liu, Chen Chen, Kai-De Chen, Yong-Long Syu, Ching-Chia Chen, Kang Liu, Xingyu Chen, H. Chiu

{"title":"Design and Implementation of an Integrated Planar Transformer for High-Frequency LLC Resonant Converters","authors":"Yu-Chen Liu, Chen Chen, Kai-De Chen, Yong-Long Syu, Ching-Chia Chen, Kang Liu, Xingyu Chen, H. Chiu","doi":"10.1109/APEC42165.2021.9487046","DOIUrl":"https://doi.org/10.1109/APEC42165.2021.9487046","url":null,"abstract":"In this study, an LLC resonant converter equipped with an adjustable leakage inductance integrated transformer is proposed and applied to high-power adapters. To achieve high efficiency and power density, the magnetic circuit was increased by substituting the resonant inductor with an adjustable leakage inductance integrated transformer, and a novel core structure was designed to reduce copper loss. To further reduce the core loss and copper loss of the transformer, the core size was analyzed using a parametric technique. Finally, the total loss and physical footprint of the transformer were compared to select the most effective design point as the final design. The FEA 3D simulation was employed to verify the function of the transformer. An integrated transformer with adjustable leakage inductance replaced the resonant inductor in LLC resonant converters. Finally, a resonant converter was achieved with a switching frequency operating at 1 MHz, input voltage of 380 V, output voltage of 19 V, output power of 190 W, power density of 400 W/in3, and maximum efficiency of 94.3%.","PeriodicalId":7050,"journal":{"name":"2021 IEEE Applied Power Electronics Conference and Exposition (APEC)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2021-06-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"89375912","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

A Three-phase 450 kVA SiC-MOSFET Based Inverter With High Efficiency and High Power Density By Using 3L-TNPC 基于3L-TNPC的高效高功率密度三相450kva SiC-MOSFET逆变器

2021 IEEE Applied Power Electronics Conference and Exposition (APEC) Pub Date : 2021-06-14 DOI: 10.1109/APEC42165.2021.9487253

Zhao Yuan, A. Emon, Zhongjing Wang, Hongwu Peng, B. Narayanasamy, M. Hassan, Yalin Wang, A. Deshpande, F. Luo

引用次数: 3