Overcurrent Capability Evaluation of 600 V GaN GITs under Various Time Durations

This work evaluates the overcurrent capability of 600V Gallium Nitride (GaN) Gate Injection Transistor (GIT) under different time durations and initial junction temperatures in a non-destructive approach. Setups and procedures are established to control drain current, time duration and junction temperature. The degradation of the device is examined after each overcurrent test. Gate-to-source voltage, drain-to-source voltage and drain current are measured for each test. Based on the test results, maximum withstand current, It-curve, I2t-curve, and maximum withstand energy are determined for 600V GaN GIT. The results can be applied to the design of GaN-based converters for transient and overload conditions, as well as dc solid-state circuit breakers.