Developing Soft Switching in Solid-State Circuit Breakers

R. Kheirollahi, Zhonghao Dongye, Hua Zhang, Shuyan Zhao, F. Lu
{"title":"Developing Soft Switching in Solid-State Circuit Breakers","authors":"R. Kheirollahi, Zhonghao Dongye, Hua Zhang, Shuyan Zhao, F. Lu","doi":"10.1109/APEC42165.2021.9487219","DOIUrl":null,"url":null,"abstract":"This paper aims to apply silicon-carbide (SiC) MOSFETs to solid-state circuit breakers (SSCBs) including active injection circuits (AIRCs) for DC systems. SiC MOSFETs are employed in main and auxiliary circuits to provide a fast response time and compact design. Benefiting from AIRCs, fault current is reduced to zero in the main switch during DC current interruption. The obtained soft-switching helps to mitigate the effects of parasitic components and utilize the fully capabilities of the SiC MOSFETs in SSCBs. To select the optimized values of the passive components in the auxiliary branch, a design procedure is developed. The presented topology is verified using simulations of 4kV/100A in LTspice environment and experiments of a downsized 380V/15A prototype with a response time of 2.8µs.","PeriodicalId":7050,"journal":{"name":"2021 IEEE Applied Power Electronics Conference and Exposition (APEC)","volume":"45 1","pages":"1117-1121"},"PeriodicalIF":0.0000,"publicationDate":"2021-06-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2021 IEEE Applied Power Electronics Conference and Exposition (APEC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/APEC42165.2021.9487219","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1

Abstract

This paper aims to apply silicon-carbide (SiC) MOSFETs to solid-state circuit breakers (SSCBs) including active injection circuits (AIRCs) for DC systems. SiC MOSFETs are employed in main and auxiliary circuits to provide a fast response time and compact design. Benefiting from AIRCs, fault current is reduced to zero in the main switch during DC current interruption. The obtained soft-switching helps to mitigate the effects of parasitic components and utilize the fully capabilities of the SiC MOSFETs in SSCBs. To select the optimized values of the passive components in the auxiliary branch, a design procedure is developed. The presented topology is verified using simulations of 4kV/100A in LTspice environment and experiments of a downsized 380V/15A prototype with a response time of 2.8µs.
固态断路器软开关的发展
本文旨在将碳化硅(SiC) mosfet应用于直流系统的固态断路器(sscb),包括有源注入电路(airc)。SiC mosfet用于主电路和辅助电路,提供快速响应时间和紧凑的设计。得益于airc,在直流电流中断时,主开关的故障电流降至零。所获得的软开关有助于减轻寄生元件的影响,并充分利用sscb中SiC mosfet的功能。为了选择辅助支路中无源元件的最优值,制定了设计程序。通过LTspice环境下4kV/100A的仿真和响应时间为2.8µs的缩小380V/15A原型的实验,验证了所提出的拓扑结构。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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