70th Device Research Conference最新文献_第6页

Extraction of near interface trap density in top gated graphene transistor using high frequency current voltage characteristics 利用高频电流电压特性提取顶门控石墨烯晶体管近界面陷阱密度

70th Device Research Conference Pub Date : 2012-06-18 DOI: 10.1109/DRC.2012.6257022

H. Madan, M. Hollander, J. A. Robinson, S. Datta

引用次数: 9

Low-voltage ZnO double-gate thin film transistor circuits 低压ZnO双栅薄膜晶体管电路

70th Device Research Conference Pub Date : 2012-06-18 DOI: 10.1109/DRC.2012.6256969

Y. Li, J. I. Ramírez, K. G. Sun, T. Jackson

{"title":"Low-voltage ZnO double-gate thin film transistor circuits","authors":"Y. Li, J. I. Ramírez, K. G. Sun, T. Jackson","doi":"10.1109/DRC.2012.6256969","DOIUrl":"https://doi.org/10.1109/DRC.2012.6256969","url":null,"abstract":"We report here double-gate ZnO thin film transistor (TFT) circuits with operation at low voltage. TFTs with low voltage operation have been reported previously, but often use very thin (few nm thick) gate dielectric which may limit manufacturability. Oxide semiconductor-based TFTs have been extensively studied as competitive candidates for next-generation display technology and other large-area electronics. For many applications, operation at voltages compatible with low-voltage CMOS is important. Doublegate TFTs are of interest because they allow threshold voltage tuning, improved device performance, and circuit applications like mixers. We have previously reported bottom-gate ZnO TFTs and circuits fabricated on glass and flexible polymeric substrates using plasma enhanced atomic layer deposition (PEALD). Here we report double-gate ZnO TFTs and circuits fabricated on glass substrates using PEALD with a maximum process temperature of 200 °C. Compared to bottom-gate ZnO TFTs, doublegate ZnO TFTs have higher mobility, and reduced substhreshold slope. In these devices, the top gate can be used to vary the bottom-gate threshold voltage by more than 4 V. This allows the logic transition point for circuits to be adjusted as desired and allows logic operation at low voltage. 15 stage double-gate ZnO TFT ring oscillators operate well with VDD = 1.2 V, ID = 32 μA, and propagation delay of 2.1 μs/stage.","PeriodicalId":6808,"journal":{"name":"70th Device Research Conference","volume":"22 1","pages":"239-240"},"PeriodicalIF":0.0,"publicationDate":"2012-06-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83474867","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 3

Hybrid straintronics and spintronics: An ultra energy-efficient paradigm for logic and memory 混合应变电子学和自旋电子学:一种用于逻辑和存储器的超节能范例

70th Device Research Conference Pub Date : 2012-06-18 DOI: 10.1109/DRC.2012.6257020

Supriyo Bandyopadhyay, J. Atulasimha

引用次数: 1

Double slot high-k waveguide grating couplers for silicon photonics 硅光子学用双槽高k波导光栅耦合器

70th Device Research Conference Pub Date : 2012-06-18 DOI: 10.1109/DRC.2012.6256930

M. Naiini, C. Henkel, G. Malm, M. Ostling

引用次数: 3

First demonstration of two-dimensional WS2 transistors exhibiting 105 room temperature modulation and ambipolar behavior 二维WS2晶体管的首次演示，显示105室温调制和双极性行为

70th Device Research Conference Pub Date : 2012-06-18 DOI: 10.1109/DRC.2012.6257042

W. Hwang, M. Remškar, R. Yan, V. Protasenko, K. Tahy, S. Chae, H. Xing, A. Seabaugh, D. Jena

引用次数: 5

Ultra-sensitive magnetoelectric sensor with high saturation field 高饱和场超灵敏磁电传感器

70th Device Research Conference Pub Date : 2012-06-18 DOI: 10.1109/DRC.2012.6256949

L. Mei, Z. Fang, Feng Li, S. Datta, Q. Zhang

引用次数: 3

Improved GaN-based HEMT performance by nanocrystalline diamond capping 纳米晶金刚石封盖改善氮化镓基HEMT性能

70th Device Research Conference Pub Date : 2012-06-18 DOI: 10.1109/DRC.2012.6256985

T. Anderson, K. Hobart, M. Tadjer, T. Feygelson, E. Imhoff, D. Meyer, D. Katzer, J. Hite, F. Kub, B. Pate, S. Binari, C. Eddy

引用次数: 6

Illumination instability analysis of ZnO thin film transistors with HfO2 gate dielectrics HfO2栅极介质ZnO薄膜晶体管的光照不稳定性分析

70th Device Research Conference Pub Date : 2012-06-18 DOI: 10.1109/DRC.2012.6256994

J. Siddiqui, J. Phillips, K. Leedy, B. Bayraktaroglu

引用次数: 0

Limits of detection for silicon nanowire BioFETs 硅纳米线生物场效应管的检测限

70th Device Research Conference Pub Date : 2012-06-18 DOI: 10.1109/DRC.2012.6256954

Nitin K. Rajan, X. Duan, A. Vacic, D. Routenberg, Mark A. Reed

引用次数: 1

Negative differential resistance in short-channel graphene FETs: Semianalytical model and simulations 短沟道石墨烯fet的负差分电阻:半解析模型和模拟

70th Device Research Conference Pub Date : 2012-06-18 DOI: 10.1109/DRC.2012.6256975

R. Grassi, T. Low, A. Gnudi, G. Baccarani

引用次数: 1