二维WS2晶体管的首次演示，显示105室温调制和双极性行为

70th Device Research Conference Pub Date : 2012-06-18 DOI:10.1109/DRC.2012.6257042

W. Hwang, M. Remškar, R. Yan, V. Protasenko, K. Tahy, S. Chae, H. Xing, A. Seabaugh, D. Jena

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引用次数: 5

摘要

本文首次用化学合成材料制备了二维WS2晶体管，并对其进行了表征。拉曼测量证实了材料的二维晶体性质，并且带隙的存在导致室温下晶体管的高开/关电流比和电流饱和。此外，所观察到的二维层状半导体的光响应可以实现光学器件的应用。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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First demonstration of two-dimensional WS2 transistors exhibiting 105 room temperature modulation and ambipolar behavior

Two-dimensional (2D) WS2 transistors were fabricated and characterized for the first time from chemically-synthesized material. Raman measurements confirm the 2D crystal nature of the material, and the presence of a bandgap leads to high on/off current ratios and current saturation in the transistors at room temperature. In addition, the observed photoresponse of the 2D layered semiconductor can enable optical device applications.

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70th Device Research Conference

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