First demonstration of two-dimensional WS2 transistors exhibiting 105 room temperature modulation and ambipolar behavior

Abstract

Two-dimensional (2D) WS2 transistors were fabricated and characterized for the first time from chemically-synthesized material. Raman measurements confirm the 2D crystal nature of the material, and the presence of a bandgap leads to high on/off current ratios and current saturation in the transistors at room temperature. In addition, the observed photoresponse of the 2D layered semiconductor can enable optical device applications.