Extraction of near interface trap density in top gated graphene transistor using high frequency current voltage characteristics

H. Madan, M. Hollander, J. A. Robinson, S. Datta
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引用次数: 9

Abstract

Graphene as a material has created a lot of interest due to properties like high saturation velocity, high current carrying capacity, ambipolar characteristics and high transconductance. These properties make graphene based transistors a promising candidate for high frequency applications. Recently, there have been demonstration of RF mixers with graphene transistors. Traditional DC measurements are not sufficient when considering graphene transistors for high frequency circuit design, making it essential to study the transistor IV performance at operating frequencies >;GHz. In this work we outline an RF IV extraction technique and use physics based analytical model to evaluate the performance of graphene transistors with HfO2 high-κ dielectric.
利用高频电流电压特性提取顶门控石墨烯晶体管近界面陷阱密度
石墨烯作为一种材料,由于其高饱和速度、高载流能力、双极性特性和高跨导等特性而引起了人们的极大兴趣。这些特性使石墨烯基晶体管成为高频应用的有希望的候选者。最近,已经有石墨烯晶体管的射频混频器的演示。在考虑石墨烯晶体管的高频电路设计时,传统的直流测量是不够的,因此有必要研究晶体管IV在>;GHz工作频率下的性能。在这项工作中,我们概述了一种射频IV提取技术,并使用基于物理的分析模型来评估具有HfO2高-κ介电介质的石墨烯晶体管的性能。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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