发布求助
文献互助 智能选刊 最新文献

2020 IEEE/MTT-S International Microwave Symposium (IMS)最新文献

筛选
英文 中文
A W-Band Rectenna Using On-Chip CMOS Switching Rectifier and On-PCB Tapered Slot Antenna Achieving 25% Effective-Power-Conversion Efficiency for Wireless Power Transfer 采用片上CMOS开关整流器和pcb上锥形槽天线的w波段整流天线实现25%的有效功率转换效率，用于无线电力传输
2020 IEEE/MTT-S International Microwave Symposium (IMS) Pub Date : 2020-08-01 DOI: 10.1109/IMS30576.2020.9223846
Pingyang He, Jie Xu, Dixian Zhao
{"title":"A W-Band Rectenna Using On-Chip CMOS Switching Rectifier and On-PCB Tapered Slot Antenna Achieving 25% Effective-Power-Conversion Efficiency for Wireless Power Transfer","authors":"Pingyang He, Jie Xu, Dixian Zhao","doi":"10.1109/IMS30576.2020.9223846","DOIUrl":"https://doi.org/10.1109/IMS30576.2020.9223846","url":null,"abstract":"This paper presents a W-band rectenna unit, which incorporates an optimized CMOS switching rectifier and a print tapered slot antenna. Based on the analysis of the operation principle of the switching rectifier, this paper proposes an optimized structure of the switching rectifier and the body-diode effect (BDE) to improve reliability and power conversion efficiency (PCE). Besides, a high-gain W-band antipodal linearly tapered slot antenna (ALTSA) is implemented on PCB to improve the overall efficiency. The switching rectifier achieves a peak PCE of 45.8% at 94 GHz with improved reliability. The overall PCE of the rectenna unit up to 25% is achieved with 5.6 mW output dc power under 90 mW/cm2 incident power density. The proposed rectifier and rectenna achieve the highest PCE among recently reported W-band rectifiers and rectennas with different technologies","PeriodicalId":6784,"journal":{"name":"2020 IEEE/MTT-S International Microwave Symposium (IMS)","volume":"49 1","pages":"1055-1058"},"PeriodicalIF":0.0,"publicationDate":"2020-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"73607708","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
A 300-µW Cryogenic HEMT LNA for Quantum Computing 用于量子计算的300µW低温HEMT LNA
2020 IEEE/MTT-S International Microwave Symposium (IMS) Pub Date : 2020-08-01 DOI: 10.1109/IMS30576.2020.9223865
E. Cha, N. Wadefalk, G. Moschetti, A. Pourkabirian, J. Stenarson, J. Grahn
{"title":"A 300-µW Cryogenic HEMT LNA for Quantum Computing","authors":"E. Cha, N. Wadefalk, G. Moschetti, A. Pourkabirian, J. Stenarson, J. Grahn","doi":"10.1109/IMS30576.2020.9223865","DOIUrl":"https://doi.org/10.1109/IMS30576.2020.9223865","url":null,"abstract":"This paper reports on ultra-low power 4–8 GHz (C-band) InP high-electron mobility transistor (HEMT) cryogenic low-noise amplifiers (LNAs) aimed for qubit amplification in quantum computing. We have investigated dc power dissipation in hybrid three-stage cryogenic LNAs using 100-nm gate length InP HEMTs with different indium content in the channel (65% and 80%). The noise performance at 300 K was found to be comparable for both channel structures. At 5 K, an LNA with 65% indium channel exhibited significantly lower noise temperature at any dc power dissipation compared to the LNA with 80% indium channel. The LNA with 65% indium channel achieved an average noise of 3.2 K with 23 dB gain at an ultra-low power consumption of 300 µW. To the best of authors' knowledge, the LNA exhibited the lowest noise temperature to date for sub-milliwatt power cryogenic C-band LNAs.","PeriodicalId":6784,"journal":{"name":"2020 IEEE/MTT-S International Microwave Symposium (IMS)","volume":"15 1","pages":"1299-1302"},"PeriodicalIF":0.0,"publicationDate":"2020-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74768239","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 26
A Wearable Throat Vibration Microwave Sensor Based on Split-Ring Resonator for Harmonics Detection 基于分环谐振腔的可穿戴喉部振动微波传感器谐波检测
2020 IEEE/MTT-S International Microwave Symposium (IMS) Pub Date : 2020-08-01 DOI: 10.1109/IMS30576.2020.9223879
Yun-Rei Ho, Chin-Lung Yang
{"title":"A Wearable Throat Vibration Microwave Sensor Based on Split-Ring Resonator for Harmonics Detection","authors":"Yun-Rei Ho, Chin-Lung Yang","doi":"10.1109/IMS30576.2020.9223879","DOIUrl":"https://doi.org/10.1109/IMS30576.2020.9223879","url":null,"abstract":"This paper proposed a wearable throat vibration system using a microwave sensor. Compared with millimeterwave measurement systems, a simple split-ring resonator can clearly detect and evaluate vocal fold vibration in the industrial, scientific and medical band. Higher harmonics can still be identified and quantified. A high-sensitivity microwave split-ring resonator has a sharp resonance response corresponding to the variation of the electrical fields timely in the near field to detect throat vibration. The use of amplitude modulation can be detected using an envelope detector at low cost and sensitively senses details of the vibration from vocal fold. Finally, the actual measurement results prove that the microwave sensor can measure approximately eleventh harmonics.","PeriodicalId":6784,"journal":{"name":"2020 IEEE/MTT-S International Microwave Symposium (IMS)","volume":"603 1","pages":"504-507"},"PeriodicalIF":0.0,"publicationDate":"2020-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"77401128","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Polylithic Integration for RF/MM-Wave Chiplets using Stitch-Chips: Modeling, Fabrication, and Characterization 使用缝片的射频/毫米波小芯片的多片集成:建模、制造和表征
2020 IEEE/MTT-S International Microwave Symposium (IMS) Pub Date : 2020-08-01 DOI: 10.1109/IMS30576.2020.9223887
Ting Zheng, Paul K. Jo, Sreejith Kochupurackal Rajan, M. Bakir
{"title":"Polylithic Integration for RF/MM-Wave Chiplets using Stitch-Chips: Modeling, Fabrication, and Characterization","authors":"Ting Zheng, Paul K. Jo, Sreejith Kochupurackal Rajan, M. Bakir","doi":"10.1109/IMS30576.2020.9223887","DOIUrl":"https://doi.org/10.1109/IMS30576.2020.9223887","url":null,"abstract":"A polylithic integration technology is demonstrated for seamless stitching of RF and digital chiplets. In this technology, stitch-chips with compressible microinterconnects (CMIs) are used for low-loss and dense interconnection between chiplets. A testbed using fused-silica stitch-chips with integrated CMIs is demonstrated including modeling, fabrication, assembly, and characterization. A 500 µm-long stitch-chip signal link is measured to have less than 0.4 dB insertion loss up to 30 GHz. A simulated eye diagram for 1000 µm-long stitch-chip signal link has a clear opening at 50 Gbps data rate. Moreover, the S-parameters of the CMIs are extracted from this testbed and show less than 0.17 dB insertion loss up to 30 GHz. Benchmarking to silicon interposer based interconnection is also reported.","PeriodicalId":6784,"journal":{"name":"2020 IEEE/MTT-S International Microwave Symposium (IMS)","volume":"30 1","pages":"1035-1038"},"PeriodicalIF":0.0,"publicationDate":"2020-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"77932725","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
GaN and GaAs HEMT Channel Charge Model for Nonlinear Microwave and RF Applications 非线性微波和射频应用的GaN和GaAs HEMT通道电荷模型
2020 IEEE/MTT-S International Microwave Symposium (IMS) Pub Date : 2020-08-01 DOI: 10.1109/IMS30576.2020.9223994
A. Parker
{"title":"GaN and GaAs HEMT Channel Charge Model for Nonlinear Microwave and RF Applications","authors":"A. Parker","doi":"10.1109/IMS30576.2020.9223994","DOIUrl":"https://doi.org/10.1109/IMS30576.2020.9223994","url":null,"abstract":"An explicit energy-based expression for HEMT channel charge is proposed. The expression is a compact formulation that is superior for design and simulation tools. As an advancement over existing approaches, the new expression offers the well-behaved high-order linearity that is critical for wireless applications.","PeriodicalId":6784,"journal":{"name":"2020 IEEE/MTT-S International Microwave Symposium (IMS)","volume":"15 1","pages":"424-427"},"PeriodicalIF":0.0,"publicationDate":"2020-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"79694287","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
A 125.5-157 GHz 8 dB NF and 16 dB of Gain D-band Low Noise Amplifier in CMOS SOI 45 nm 125.5 ~ 157 GHz 8 dB NF和16 dB增益的45 nm CMOS SOI d波段低噪声放大器
2020 IEEE/MTT-S International Microwave Symposium (IMS) Pub Date : 2020-08-01 DOI: 10.1109/IMS30576.2020.9224114
A. Hamani, A. Siligaris, B. Blampey, C. Dehos, J. G. Gonzalez Jimenez
{"title":"A 125.5-157 GHz 8 dB NF and 16 dB of Gain D-band Low Noise Amplifier in CMOS SOI 45 nm","authors":"A. Hamani, A. Siligaris, B. Blampey, C. Dehos, J. G. Gonzalez Jimenez","doi":"10.1109/IMS30576.2020.9224114","DOIUrl":"https://doi.org/10.1109/IMS30576.2020.9224114","url":null,"abstract":"In this paper, a D-band millimeter-wave low noise amplifier circuit in CMOS SOI 45 nm technology is presented. It achieves 8 dB of noise figure and 16 dB of gain with a 3-dB bandwidth of 31.5 GHz (125.5-157 GHz). It is composed of four stages of capacitively neutralized differential common-source cells cascaded using integrated mm-wave transformers to achieve high gain and large bandwidth. It consumes 75 mW from a 1-V voltage supply, and occupies a compact active area of 0.07 mm2.","PeriodicalId":6784,"journal":{"name":"2020 IEEE/MTT-S International Microwave Symposium (IMS)","volume":"51 1","pages":"197-200"},"PeriodicalIF":0.0,"publicationDate":"2020-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"79996771","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 17
A Novel 32-Gb/s 5.6-Vpp Digital-to-Analog Converter in 100 nm GaN Technology for 5G Signal Generation 基于100nm GaN技术的新型32gb /s 5.6 vpp数模转换器，用于5G信号生成
2020 IEEE/MTT-S International Microwave Symposium (IMS) Pub Date : 2020-08-01 DOI: 10.1109/IMS30576.2020.9224080
M. Weiß, C. Friesicke, R. Quay, O. Ambacher
{"title":"A Novel 32-Gb/s 5.6-Vpp Digital-to-Analog Converter in 100 nm GaN Technology for 5G Signal Generation","authors":"M. Weiß, C. Friesicke, R. Quay, O. Ambacher","doi":"10.1109/IMS30576.2020.9224080","DOIUrl":"https://doi.org/10.1109/IMS30576.2020.9224080","url":null,"abstract":"The RF-power digital-to-analog converter (DAC) presented here provides RF-signals in the gigabit regime with voltage swings up to 8.32 V, suitable to drive subsequent single-stage microwave gallium nitride (GaN) power amplifer for sub-six frequencies. A current-steering architecture is driven by a custom algorithm to provide a programmable high output current, up to 250 mA, to a capacitive load such as the capacitive input impedance of an single-stage GaN power amplifier. This architecture provides data rates up to 32 Gb/s with an custom encoding, while the output voltage swing at the load capacitance is higher than 5 Vpp. Therefore, slew rates of up to 76 V/ns can be established.","PeriodicalId":6784,"journal":{"name":"2020 IEEE/MTT-S International Microwave Symposium (IMS)","volume":"37 1","pages":"952-955"},"PeriodicalIF":0.0,"publicationDate":"2020-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81117540","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Novel Non-Reciprocal Microwave Spin Wave and Magneto-Elastic Wave Devices for On-Chip Signal Processing 用于片上信号处理的新型非互易微波自旋波和磁弹性波器件
2020 IEEE/MTT-S International Microwave Symposium (IMS) Pub Date : 2020-08-01 DOI: 10.1109/IMS30576.2020.9223956
I. Krivorotov, E. Montoya, Amanatullah Khan, A. Slavin, Mingzhong Wu
{"title":"Novel Non-Reciprocal Microwave Spin Wave and Magneto-Elastic Wave Devices for On-Chip Signal Processing","authors":"I. Krivorotov, E. Montoya, Amanatullah Khan, A. Slavin, Mingzhong Wu","doi":"10.1109/IMS30576.2020.9223956","DOIUrl":"https://doi.org/10.1109/IMS30576.2020.9223956","url":null,"abstract":"The discovery of interfacial Dzyaloshinskii-Moriya interaction (DMI) enables development of novel ultra-compact non-reciprocal devices for microwave signal processing. Such devices are based on control of spin waves and magneto-elastic waves by electric field and addition of ultra-thin layers of heavy metals to the devices. Here we discuss recent advances in the development of such systems, which can be used for implementation of on-chip non-reciprocal microwave devices.","PeriodicalId":6784,"journal":{"name":"2020 IEEE/MTT-S International Microwave Symposium (IMS)","volume":"2 1","pages":"524-527"},"PeriodicalIF":0.0,"publicationDate":"2020-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81517547","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A Superharmonic Injection based G-band Quadrature VCO in CMOS 基于超谐波注入的g波段正交压控振荡器
2020 IEEE/MTT-S International Microwave Symposium (IMS) Pub Date : 2020-08-01 DOI: 10.1109/IMS30576.2020.9223816
Xuan Ding, Hai-xia Yu, Bo Yu, Zhiwei Xu, Q. Gu
{"title":"A Superharmonic Injection based G-band Quadrature VCO in CMOS","authors":"Xuan Ding, Hai-xia Yu, Bo Yu, Zhiwei Xu, Q. Gu","doi":"10.1109/IMS30576.2020.9223816","DOIUrl":"https://doi.org/10.1109/IMS30576.2020.9223816","url":null,"abstract":"This paper presents a G-band quadrature voltage-controlled oscillator (QVCO) enabled by a superharmonic injection technique. This technique ensures differential phases at the common mode tail current source nodes of two differential oscillators, which are then enforced to generate quadrature outputs. It achieves a maximum output power of -1.54 dBm with the efficiency of 3.2% and the tuning range (TR) from 149.3 GHz to 152.4 GHz. The measured phase noise (PN) is -91.9 dBc/Hz at 1 MHz offset. The IQ outputs are down-converted by an on-chip mixer for phase and amplitude accuracy measurement. The measured I/Q phase mismatch is less than 1.5° and amplitude mismatch of less than 0.33 dB over the operating frequency range. The QVCO is implemented in a 28 nm CMOS process, occupying 0.028 mm2 chip area.","PeriodicalId":6784,"journal":{"name":"2020 IEEE/MTT-S International Microwave Symposium (IMS)","volume":"34 1","pages":"345-348"},"PeriodicalIF":0.0,"publicationDate":"2020-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"82426999","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
A 24 - 30 GHz Ultra-Compact Phase Shifter Using All-Pass Networks for 5G User Equipment 用于5G用户设备的全通网络24 - 30ghz超紧凑型移相器
2020 IEEE/MTT-S International Microwave Symposium (IMS) Pub Date : 2020-08-01 DOI: 10.1109/IMS30576.2020.9223788
Eduardo V. P. Anjos, D. Schreurs, G. Vandenbosch, M. Geurts
{"title":"A 24 - 30 GHz Ultra-Compact Phase Shifter Using All-Pass Networks for 5G User Equipment","authors":"Eduardo V. P. Anjos, D. Schreurs, G. Vandenbosch, M. Geurts","doi":"10.1109/IMS30576.2020.9223788","DOIUrl":"https://doi.org/10.1109/IMS30576.2020.9223788","url":null,"abstract":"This work presents a 24–30 GHz phase-shifter with 0.028 mm2 of area for 5G mobile applications. The small size is achieved by employing variable-phase all-pass networks, which enables the embedding of switches within all-pass networks when implementing switched-type phase-shifters. The proposed PS was implemented and manufactured using 0.25 µm BiCMOS. Measurements were performed, showing an insertion loss of 4.49 ± 0.27 dB at 27 GHz, an RMS gain error below 0.5 dB and an RMS phase error below 7° across the whole frequency band.","PeriodicalId":6784,"journal":{"name":"2020 IEEE/MTT-S International Microwave Symposium (IMS)","volume":"64 1","pages":"217-220"},"PeriodicalIF":0.0,"publicationDate":"2020-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83166321","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
首页 上一页 下一页 尾页
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整，为了账户安全，请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
请完成安全验证×
相关产品
×
本文献相关产品
联系我们：info@booksci.cn Book学术提供免费学术资源搜索服务，方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号：604180095
Book学术官方微信