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2020 IEEE/MTT-S International Microwave Symposium (IMS)最新文献

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A Power Efficient 60-GHz Super-Regenerative Oscillator with 10-GHz Switching Rate in 22-nm FD-SOI CMOS 在22nm FD-SOI CMOS中具有10ghz开关速率的高效60ghz超再生振荡器
2020 IEEE/MTT-S International Microwave Symposium (IMS) Pub Date : 2020-08-01 DOI: 10.1109/IMS30576.2020.9223780
Ali Ferschischi, Hatem Ghaleb, Z. Tibenszky, C. Carta, F. Ellinger
{"title":"A Power Efficient 60-GHz Super-Regenerative Oscillator with 10-GHz Switching Rate in 22-nm FD-SOI CMOS","authors":"Ali Ferschischi, Hatem Ghaleb, Z. Tibenszky, C. Carta, F. Ellinger","doi":"10.1109/IMS30576.2020.9223780","DOIUrl":"https://doi.org/10.1109/IMS30576.2020.9223780","url":null,"abstract":"This paper presents the design and characterization of a super-regenerative oscillator (SRO) operating at 60 GHz. The oscillator core is based on the complementary cross-coupled topology. The SRO is capable of recovering the phase of a very small input signal and regenerate it in a much greater output signal. The circuit is fabricated in a 22-nm FD-SOI CMOS technology over a total chip area of 0.49 mm2. Measurement results have shown that the minimum input power level required for a phase-coherent output is -42 dBm. The SRO delivers a maximum output power of 1.5 dBm, which corresponds to a regenerative gain of up to 43.5 dB. The oscillation frequency of the SRO ranges from 55.6 GHz to 61.5 GHz, which results in a tuning range of 10%. With a DC power consumption of only 10 mW the circuit demonstrates a power efficiency of 14.1%, which is the highest reported efficiency by a mm-wave SRO to date. The oscillator achieves a maximum switching rate of 10 GHz, which is, to the best knowledge of the authors, the highest reported to date. This makes the presented circuit suitable for highly-efficient high-data-rate communication.","PeriodicalId":6784,"journal":{"name":"2020 IEEE/MTT-S International Microwave Symposium (IMS)","volume":"31 1","pages":"349-352"},"PeriodicalIF":0.0,"publicationDate":"2020-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"89615181","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
A CMOS Balun with Common Ground and Artificial Dielectric Compensation Achieving 79.5% Fractional Bandwidth and <2° Phase Imbalance 一种具有共地和人工介电补偿的CMOS平衡器，实现79.5%的分数带宽和<2°相位不平衡
2020 IEEE/MTT-S International Microwave Symposium (IMS) Pub Date : 2020-08-01 DOI: 10.1109/IMS30576.2020.9223981
Geliang Yang, Rui Chen, Keping Wang
{"title":"A CMOS Balun with Common Ground and Artificial Dielectric Compensation Achieving 79.5% Fractional Bandwidth and <2° Phase Imbalance","authors":"Geliang Yang, Rui Chen, Keping Wang","doi":"10.1109/IMS30576.2020.9223981","DOIUrl":"https://doi.org/10.1109/IMS30576.2020.9223981","url":null,"abstract":"This paper presents a compact on-chip balun with a turn ratio of 1:2 for sub-6 GHz applications. Common ground between the primary and secondary windings is designed by utilizing a short transmission line (T-line) to eliminate the imbalance. To further mitigate the imbalance, float metal conductors are used as a part of primary winding for artificial dielectric compensation. The balun is fabricated by using a standard 130-nm CMOS process. The bandwidth of the proposed balun for $vert mathrm{S}_{11}vert < -10$ dB is 2.2-5.1 GHz with fractional bandwidth up to 79.5%. In the operational bandwidth, the maximum amplitude and phase imbalance is 1.5 dB and 2°, respectively. The measured insertion loss is 4.8-5.6 dB (including 3 dB splitting loss) within the frequency range from 2.2 to 5.1 GHz.","PeriodicalId":6784,"journal":{"name":"2020 IEEE/MTT-S International Microwave Symposium (IMS)","volume":"46 1","pages":"1319-1322"},"PeriodicalIF":0.0,"publicationDate":"2020-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"87353040","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
920MHz Band High Sensitive Rectenna with the High Impedance Folded Dipole Antenna on the Artificial Magnetic Conductor Substrate 基于人工磁导体衬底的920MHz高灵敏度高阻抗折叠偶极子天线
2020 IEEE/MTT-S International Microwave Symposium (IMS) Pub Date : 2020-08-01 DOI: 10.1109/IMS30576.2020.9223779
Nobuhiko Yasumaru, Naoki Sakai, K. Itoh, Toshiki Tamura, S. Makino
{"title":"920MHz Band High Sensitive Rectenna with the High Impedance Folded Dipole Antenna on the Artificial Magnetic Conductor Substrate","authors":"Nobuhiko Yasumaru, Naoki Sakai, K. Itoh, Toshiki Tamura, S. Makino","doi":"10.1109/IMS30576.2020.9223779","DOIUrl":"https://doi.org/10.1109/IMS30576.2020.9223779","url":null,"abstract":"In this paper, the 920 MHz band rectenna with the high impedance folded dipole antenna on the artificial magnetic conductor substrate is described for high sensitive operation and placement on metal plates. With the antenna architecture, antenna impedance of 16 kΩ can be obtained, and this can make high efficient operation with the 40 nm SOI-CMOS rectifier IC. The developed rectenna achieves rectification efficiency of 58 % at the input power of -30 dBm. Furthermore, the rectenna on the metal plate achieves rectification efficiency of 72 %. Above values are top performances in 920 MHz band rectennas.","PeriodicalId":6784,"journal":{"name":"2020 IEEE/MTT-S International Microwave Symposium (IMS)","volume":"2020 1","pages":"1070-1072"},"PeriodicalIF":0.0,"publicationDate":"2020-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"87875544","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
InP HBT Oscillators Operating up to 682 GHz with Coupled-Line Load for Improved Efficiency and Output Power InP HBT振荡器工作频率高达682ghz，带耦合线负载，可提高效率和输出功率
2020 IEEE/MTT-S International Microwave Symposium (IMS) Pub Date : 2020-08-01 DOI: 10.1109/IMS30576.2020.9223991
Jungsoo Kim, Heekang Son, Doyoon Kim, Kiryong Song, Junghwan Yoo, J. Rieh
{"title":"InP HBT Oscillators Operating up to 682 GHz with Coupled-Line Load for Improved Efficiency and Output Power","authors":"Jungsoo Kim, Heekang Son, Doyoon Kim, Kiryong Song, Junghwan Yoo, J. Rieh","doi":"10.1109/IMS30576.2020.9223991","DOIUrl":"https://doi.org/10.1109/IMS30576.2020.9223991","url":null,"abstract":"THz oscillators operating up to 680 GHz have been developed in this work based on a 250-nm InP heterojunction bipolar transistor (HBT) technology. This work shows that the common-base cross-coupled push-push oscillator topology is improved by adopting a coupled-line structure, in which DC blocking capacitors and other transmission lines are replaced by a pair of coupled lines. The coupled lines enable efficient impedance and phase matching with a small area, resulting in improved output power and efficiency. Three types of oscillators with a slight dimensional variation were fabricated. The measured oscillation frequency of the three oscillators are 628 - 682 GHz, 556 - 610 GHz and 509 - 548 GHz, respectively, with bias-based tuning. The maximum output power and DC-to-RF efficiency of oscillators are up to -10 dBm and 0.19 %, respectively. The circuit occupies only around 0.014 mm2 excluding the probing pads.","PeriodicalId":6784,"journal":{"name":"2020 IEEE/MTT-S International Microwave Symposium (IMS)","volume":"1 1","pages":"767-770"},"PeriodicalIF":0.0,"publicationDate":"2020-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"89982134","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Ultra-Wideband FMCW Radar with over 40 GHz Bandwidth below 60 GHz for High Spatial Resolution in SiGe BiCMOS SiGe BiCMOS高空间分辨率的40 GHz以上60 GHz以下超宽带FMCW雷达
2020 IEEE/MTT-S International Microwave Symposium (IMS) Pub Date : 2020-08-01 DOI: 10.1109/IMS30576.2020.9224087
B. Welp, G. Briese, N. Pohl
{"title":"Ultra-Wideband FMCW Radar with over 40 GHz Bandwidth below 60 GHz for High Spatial Resolution in SiGe BiCMOS","authors":"B. Welp, G. Briese, N. Pohl","doi":"10.1109/IMS30576.2020.9224087","DOIUrl":"https://doi.org/10.1109/IMS30576.2020.9224087","url":null,"abstract":"Fields of application like industrial measurement, security, and material characterization with harsh demands for high spatial resolution require FMCW radar systems with high absolute bandwidth. Hereby, close adjacent targets can be distinguished from each other. Usually those systems are designed at very high frequencies around 100 GHz and above because here, sensors with high bandwidth can be designed with less effort but signal handling, antenna design and high output power is more difficult and harder to achieve at those frequencies. In this work, a modern SiGe BiCMOS process was used to develop an ultra-wideband (UWB) bistatic FMCW radar MMIC with over 40 GHz continuous bandwidth below 60 GHz. This MMIC is the key component of the presented ultra-wideband FMCW radar system. The high bandwidth is generated by down-converting two high-frequency VCOs at around 100 GHz but merely the down-converted signal below 60 GHz of both VCOs which is easier to handle leaves the MMIC. The output signal provides a frequency range which corresponds to the sum of the bandwidths of both VCOs. This leads to a radar system that achieves ultra-wide continuous bandwidth at moderate frequencies for high spatial resolution.","PeriodicalId":6784,"journal":{"name":"2020 IEEE/MTT-S International Microwave Symposium (IMS)","volume":"5 1","pages":"1255-1258"},"PeriodicalIF":0.0,"publicationDate":"2020-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90181125","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Transmit-Receive Cross-Modulation Distortion Correction in a 5-6GHz Full Duplex Quadrature Balanced CMOS RF Front-End 5-6GHz全双工正交平衡CMOS射频前端收发互调失真校正
2020 IEEE/MTT-S International Microwave Symposium (IMS) Pub Date : 2020-08-01 DOI: 10.1109/IMS30576.2020.9224029
Nimrod Ginzberg, Tomer Gidoni, D. Regev, E. Cohen
{"title":"Transmit-Receive Cross-Modulation Distortion Correction in a 5-6GHz Full Duplex Quadrature Balanced CMOS RF Front-End","authors":"Nimrod Ginzberg, Tomer Gidoni, D. Regev, E. Cohen","doi":"10.1109/IMS30576.2020.9224029","DOIUrl":"https://doi.org/10.1109/IMS30576.2020.9224029","url":null,"abstract":"In this work, we propose an analysis, characterization, and correction of transmit-receive cross-modulation (CM) distortion in a full duplex quadrature balanced CMOS RF front-end around the carrier frequency of 5.2 GHz. A theoretical model of the CM mechanism stemming from instantaneous variations in the power amplifiers' output impedance is laid out and verified in measurement. A two-dimensional digital post-distortion (2D-DPoD) algorithm is employed to linearize the CM distorted receive signal, in conjunction with wideband digital RF and baseband self-interference cancellation. The system was measured in a simultaneous transmit-receive operation using 802.11ac VHT20 signals at 10 dBm RMS Tx power and -17 dBm Rx power and achieves total Tx-Rx isolation >66 dB. The digital SIC and 2D-DPoD correct Rx EVM by 16 dB to a value of -32.5 dB.","PeriodicalId":6784,"journal":{"name":"2020 IEEE/MTT-S International Microwave Symposium (IMS)","volume":"7 1","pages":"1211-1214"},"PeriodicalIF":0.0,"publicationDate":"2020-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85190628","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
In-Band Full-Duplex Self-Interference Canceller Augmented with Bandstop-Configured Resonators 带内全双工自干扰消除器增强带阻配置谐振器
2020 IEEE/MTT-S International Microwave Symposium (IMS) Pub Date : 2020-08-01 DOI: 10.1109/IMS30576.2020.9224024
Robert Sepanek, M. Hickle, M. Stuenkel
{"title":"In-Band Full-Duplex Self-Interference Canceller Augmented with Bandstop-Configured Resonators","authors":"Robert Sepanek, M. Hickle, M. Stuenkel","doi":"10.1109/IMS30576.2020.9224024","DOIUrl":"https://doi.org/10.1109/IMS30576.2020.9224024","url":null,"abstract":"In-band full-duplex transceivers are critical to achieve the efficiency required in next generation communication systems. However, realizing this approach is difficult due to the presence of large self-interference. This paper investigates a novel approach of adaptive analog self-interference cancellation in practical systems by simultaneously leveraging key benefits of different cancellation approaches. A prototype built using a two-tap delay canceller for coarse self-interference response matching and two notch filters for fine point response adjustments demonstrates measured results. In a test scenario, this approach improves 20 dB cancellation bandwidth at 2.4 GHz from 30 MHz to 120 MHz. This is the largest reported adaptive analog isolation at this bandwidth and proves the benefits of using both time and frequency domain cancellation methods to improve bandwidth in practical communication systems.","PeriodicalId":6784,"journal":{"name":"2020 IEEE/MTT-S International Microwave Symposium (IMS)","volume":"21 1","pages":"1199-1202"},"PeriodicalIF":0.0,"publicationDate":"2020-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84690065","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
A Transient Two-Tone RF Method for the Characterization of Electron Trapping Capture and Emission Dynamics in GaN HEMTs 用于表征GaN hemt中电子捕获和发射动力学的瞬态双音RF方法
2020 IEEE/MTT-S International Microwave Symposium (IMS) Pub Date : 2020-08-01 DOI: 10.1109/IMS30576.2020.9223802
P. Tomé, Filipe M. Barradas, L. Nunes, João L. Gomes, T. Cunha, J. Pedro
{"title":"A Transient Two-Tone RF Method for the Characterization of Electron Trapping Capture and Emission Dynamics in GaN HEMTs","authors":"P. Tomé, Filipe M. Barradas, L. Nunes, João L. Gomes, T. Cunha, J. Pedro","doi":"10.1109/IMS30576.2020.9223802","DOIUrl":"https://doi.org/10.1109/IMS30576.2020.9223802","url":null,"abstract":"In this paper we propose an experimental method for the characterization and extraction of the time constants associated with the charge capture and emission processes of electron-trapping phenomena observed in radio-frequency (RF) power amplifiers (PAs) based on high-electron-mobility transistors (HEMTs). The method consists in the measurement of the transient response of a GaN HEMT-based PA to a series of large-signal two-tone RF excitations with increasing frequency separation, and the successive tracking of the gradual self-biasing experienced by the PA. With little requirements in terms of instrumentation and with applicability to fully assembled PAs, this simple method provides meaningful information on the dynamics of electron trapping close to the actual operating conditions of a GaN HEMT-based PA.","PeriodicalId":6784,"journal":{"name":"2020 IEEE/MTT-S International Microwave Symposium (IMS)","volume":"58 1","pages":"428-431"},"PeriodicalIF":0.0,"publicationDate":"2020-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84847256","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Compact and High Efficiency Rectifier Design based on Microstrip Coupled Transmission Line for Energy Harvesting 基于微带耦合传输线的小型高效能量收集整流器设计
2020 IEEE/MTT-S International Microwave Symposium (IMS) Pub Date : 2020-08-01 DOI: 10.1109/IMS30576.2020.9224117
Fading Zhao, D. Inserra, G. Wen
{"title":"Compact and High Efficiency Rectifier Design based on Microstrip Coupled Transmission Line for Energy Harvesting","authors":"Fading Zhao, D. Inserra, G. Wen","doi":"10.1109/IMS30576.2020.9224117","DOIUrl":"https://doi.org/10.1109/IMS30576.2020.9224117","url":null,"abstract":"In this paper, a microwave rectifier based on a Schottky diode, a short-ended transmission line, and a microstrip coupled transmission line is proposed, resulting in a very simple and compact structure if compared with other similar designs. Furthermore, the proposed microwave rectifier is shown to be effective for achieving good impedance matching and, at the same time, it provides outstanding RF-to-DC conversion efficiency for input power as low as 1 mW. In particular the manufactured prototype exhibits a measured microwave-to-DC conversion efficiency of 62% which is a remarkable result if compared with state-of-the-art designs based on the same Avago HSMS285C or similar Schottky diodes.","PeriodicalId":6784,"journal":{"name":"2020 IEEE/MTT-S International Microwave Symposium (IMS)","volume":"148 1","pages":"1063-1065"},"PeriodicalIF":0.0,"publicationDate":"2020-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"86118836","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
A Tri (K/Ka/V)-Band Monolithic CMOS Low Noise Amplifier with Shared Signal Path and Variable Gains 一种具有共享信号通路和可变增益的三(K/Ka/V)波段单片CMOS低噪声放大器
2020 IEEE/MTT-S International Microwave Symposium (IMS) Pub Date : 2020-08-01 DOI: 10.1109/IMS30576.2020.9223850
Chia-Jen Liang, Ching-Wen Chiang, Jia Zhou, R. Huang, K. Wen, Mau-Chung Frank Chang, Yen-Cheng Kuan
{"title":"A Tri (K/Ka/V)-Band Monolithic CMOS Low Noise Amplifier with Shared Signal Path and Variable Gains","authors":"Chia-Jen Liang, Ching-Wen Chiang, Jia Zhou, R. Huang, K. Wen, Mau-Chung Frank Chang, Yen-Cheng Kuan","doi":"10.1109/IMS30576.2020.9223850","DOIUrl":"https://doi.org/10.1109/IMS30576.2020.9223850","url":null,"abstract":"This paper presents a single-signal-path tri-band (K/Ka/V) variable-gain low noise amplifier (LNA) fabricated in 28-nm bulk CMOS technology. This LNA uses a common-gate input stage with a triple-coupling transformer (TCT) to achieve better impedance matching across three desired bands than those of prior arts and to enable the necessary gm-boosting to suppress undesired noise. Each LNA stage (except the final one) is loaded with a PMOS switched inductor carefully designed to trade off parasitic capacitances/resistances between off/on states. PMOS devices are also used in parallel with switched inductors as variable resistors to realize the variable gain functionality. Accordingly, the load quality factors can be changed to make the LNA power gain adjustable. This LNA consists of six stages and offers variable power gains from -5.5 to 29.9 dB (24 GHz), -5.5 to 32.4 dB (33 GHz), and -11.5 to 22.2 dB (50 GHz) with respective minimum noise figures of 5.63 dB, 4.55 dB, and 5.96 dB. This LNA consumes 25.6 mW from a 1-V supply and occupies 0.22 mm2 without pads in silicon area.","PeriodicalId":6784,"journal":{"name":"2020 IEEE/MTT-S International Microwave Symposium (IMS)","volume":"25 1","pages":"333-336"},"PeriodicalIF":0.0,"publicationDate":"2020-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"86844822","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 10
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