2020 IEEE/MTT-S International Microwave Symposium (IMS)最新文献

A Low-Loss Balun-Embedded Interconnect for THz Heterogeneous System Integration 一种用于太赫兹异构系统集成的低损耗平衡嵌入式互连

2020 IEEE/MTT-S International Microwave Symposium (IMS) Pub Date : 2020-08-01 DOI: 10.1109/IMS30576.2020.9224046

Te-Yen Chiu, Yu-Ling Lee, Chun-Lin Ko, S. Tseng, Chun-Hsing Li

引用次数: 0

Lamb Wave Resonator Loaded Non-reciprocal RF Devices Lamb波谐振器加载非互易射频器件

2020 IEEE/MTT-S International Microwave Symposium (IMS) Pub Date : 2020-08-01 DOI: 10.1109/IMS30576.2020.9224075

Ting Lu, J. Schneider, Xiating Zou, Sidhant Tiwari, Z. Yao, G. Carman, R. Candler, Y. Wang

引用次数: 2

Terahertz Generation through Bias-free Telecommunication Compatible Photoconductive Nanoantennas over a 5 THz Radiation Bandwidth 通过无偏置电信兼容光导纳米天线在5太赫兹辐射带宽上产生太赫兹

2020 IEEE/MTT-S International Microwave Symposium (IMS) Pub Date : 2020-08-01 DOI: 10.1109/IMS30576.2020.9224081

D. Turan, N. Yardimci, P. Lu, M. Jarrahi

{"title":"Terahertz Generation through Bias-free Telecommunication Compatible Photoconductive Nanoantennas over a 5 THz Radiation Bandwidth","authors":"D. Turan, N. Yardimci, P. Lu, M. Jarrahi","doi":"10.1109/IMS30576.2020.9224081","DOIUrl":"https://doi.org/10.1109/IMS30576.2020.9224081","url":null,"abstract":"We demonstrate a broadband and highly reliable photoconductive terahertz emitter based on plasmonic nanoantennas that operates at telecommunication optical wavelengths (~1550 nm) at which low-cost and compact lasers are commercially available. The photoconductive substrate is specifically grown to induce a built-in electric field at the interface between the nanoantennas and photoconductive substrate. This built-in electric field drifts the photocarriers generated by the optical pump beam and produces the terahertz feed current to the nanoantennas while eliminating the need for an external bias voltage. The bias-free operation suppresses the dark current that is detrimental to the photoconductive emitters that operate at telecommunication optical wavelengths. Despite their great promise, the bandwidth of previously demonstrated bias-free photoconductive terahertz emitters has been limited by the limited extent of the built-in electric field in the photoconductive substrate. Here we present a telecommunication-compatible, bias-free photoconductive terahertz emitter that offers more than a 5 THz radiation bandwidth and a 100 dB dynamic range.","PeriodicalId":6784,"journal":{"name":"2020 IEEE/MTT-S International Microwave Symposium (IMS)","volume":"16 1","pages":"87-90"},"PeriodicalIF":0.0,"publicationDate":"2020-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"75195564","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

Broadband PA Architectures with Asymmetrical Combining and Stacked PA cells across 50-70 GHz and 64-110 GHz in 250 nm InP 250 nm InP中50-70 GHz和64-110 GHz频段非对称组合和堆叠PA单元的宽带PA架构

2020 IEEE/MTT-S International Microwave Symposium (IMS) Pub Date : 2020-08-01 DOI: 10.1109/IMS30576.2020.9223774

T. Sharma, Zheng Liu, C. R. Chappidi, H. Saeidi, S. Venkatesh, K. Sengupta

引用次数: 10

Non-Destructive Testing of Non-Metallic Concentric Pipes Using Microwave Measurements 非金属同心管的微波无损检测

2020 IEEE/MTT-S International Microwave Symposium (IMS) Pub Date : 2020-08-01 DOI: 10.1109/IMS30576.2020.9223996

Hailun Wu, M. Ravan, Raveena Sharma, Jay Patel, R. Amineh

引用次数: 0

Power-Combined Rectenna Array for X-Band Wireless Power Transfer 用于x波段无线电力传输的功率组合整流天线阵列

2020 IEEE/MTT-S International Microwave Symposium (IMS) Pub Date : 2020-08-01 DOI: 10.1109/IMS30576.2020.9223970

Eric Kwiatkowski, C. Rodenbeck, T. Barton, Z. Popovic

引用次数: 4

An over 230 W, 0.5–2.1 GHz Wideband GaN Power Amplifier using Transmission-Line-Transformer-Based Combining Technique 基于传输线变压器组合技术的230 W以上、0.5-2.1 GHz宽带GaN功率放大器

2020 IEEE/MTT-S International Microwave Symposium (IMS) Pub Date : 2020-08-01 DOI: 10.1109/IMS30576.2020.9223974

Y. Niida, Masaru Sato, M. Nishimori, T. Ohki, N. Nakamura

引用次数: 3

A 20 W GaN-on-Si Solid State Power Amplifier for Q-band Space Communication Systems 用于q波段空间通信系统的20w GaN-on-Si固态功率放大器

2020 IEEE/MTT-S International Microwave Symposium (IMS) Pub Date : 2020-08-01 DOI: 10.1109/IMS30576.2020.9223808

R. Giofré, F. Costanzo, A. Massari, A. Suriani, F. Vitulli, E. Limiti

{"title":"A 20 W GaN-on-Si Solid State Power Amplifier for Q-band Space Communication Systems","authors":"R. Giofré, F. Costanzo, A. Massari, A. Suriani, F. Vitulli, E. Limiti","doi":"10.1109/IMS30576.2020.9223808","DOIUrl":"https://doi.org/10.1109/IMS30576.2020.9223808","url":null,"abstract":"This contribution presents a Q-band Solid State Power Amplifier (SSPA) developed by Thales Alenia Space in Italy for next generation High Throughput Satellite (HTS). The Radio Frequency Tray (RFT) is composed by the cascade of a channel amplifier, a linearizer and a high power section. The first two sub-units are built with mainly Gallium Arsenide components, whereas the latter combines sixteen elementary MMICs Power Amplifiers (PAs), designed ad-hoc on a commercial 100 nm gate length Gallium Nitride on Silicon (GaN-Si) process, in WR-22 waveguide structure. Sizes and weight of a first prototype of the SSPA discussed in this paper are [45x22x7.2] (LxWxH) cm3and 5.5 Kg, respectively, including the WR-22 waveguide input and output isolators. A version with reduced mass (3.5 kg) and size [29.5x21.0x5.5] (LxWxH) cm3is under test at the time of writing and results will be presented at the conference. In the overall Q-band downlink range (i.e., from 37.5 to 42.5GHz) the SSPA delivers more than 20 W of output power with an associated Noise to Power Ratio and power added efficiency better than 18 dB and 15 %, respectively, whereas the gain can be varied from 60 dB to 100 dB through telecommand. To the best of the authors' knowledge, this is the first realization of a 20 W SSPA in Q-band for space applications, at least in Europe.","PeriodicalId":6784,"journal":{"name":"2020 IEEE/MTT-S International Microwave Symposium (IMS)","volume":"14 1","pages":"413-415"},"PeriodicalIF":0.0,"publicationDate":"2020-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"79143959","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 5

Automated Spiral Inductor Design by a Calibrated PI Network with Manifold Mapping Technique 用流形映射技术标定PI网络设计自动螺旋电感器

2020 IEEE/MTT-S International Microwave Symposium (IMS) Pub Date : 2020-08-01 DOI: 10.1109/IMS30576.2020.9223860

Xiaolin Fan, Song Li, P. Laforge, Q. Cheng

引用次数: 0

A Compact Ultra-broadband GaN MMIC T/R Front-End Module 一种紧凑型超宽带GaN MMIC T/R前端模块

2020 IEEE/MTT-S International Microwave Symposium (IMS) Pub Date : 2020-08-01 DOI: 10.1109/IMS30576.2020.9223795

Q. Lin, Haifeng Wu, Yijun Chen, Liu-lin Hu, Shanji Chen, Xiao-Ming Zhang

{"title":"A Compact Ultra-broadband GaN MMIC T/R Front-End Module","authors":"Q. Lin, Haifeng Wu, Yijun Chen, Liu-lin Hu, Shanji Chen, Xiao-Ming Zhang","doi":"10.1109/IMS30576.2020.9223795","DOIUrl":"https://doi.org/10.1109/IMS30576.2020.9223795","url":null,"abstract":"This paper presents the design and the measured results of a monolithic microwave integrated circuit (MMIC) T/R front-end module (FEM) suitable for S band to Ku band applications, using a 0.1µm GaN HEMT process. For the first time, the design successfully integrated a 3-stacked non-uniform distributed power amplifier (SNDPA), a two-stage 2-stacked low noise amplifier (LNA) and a T/R switch in one MMIC, to obtain the ultra-broadband power response in Tx mode and low-noise low-consumption performance in Rx mode, simultaneously. Measured results of the MMIC T/R FEM across the 2 to 18 GHz band show that a noise figure (NF) lower than 3.5 dB and a gain better than 18 dB in Rx mode. Meanwhile, about 39 dBm output power at least 16.5 ± 2 dB small-signal gain and average 20% power add efficiency (PAE) have been achieved in Tx mode. The chip occupies a die area of 2.5 × 3.2 mm2. To the best of the authors' knowledge, this work reports the first T/R MMIC FEM which covers the frequency range of 2 to 18 GHz and achieves about 8 W output power and lower than 3.5 dB NF with the smallest die size among all published chips to date.","PeriodicalId":6784,"journal":{"name":"2020 IEEE/MTT-S International Microwave Symposium (IMS)","volume":"53 1","pages":"1231-1234"},"PeriodicalIF":0.0,"publicationDate":"2020-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85873034","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 7