Eric Kwiatkowski, C. Rodenbeck, T. Barton, Z. Popovic
{"title":"Power-Combined Rectenna Array for X-Band Wireless Power Transfer","authors":"Eric Kwiatkowski, C. Rodenbeck, T. Barton, Z. Popovic","doi":"10.1109/IMS30576.2020.9223970","DOIUrl":null,"url":null,"abstract":"This work presents an RF power-combined rectenna array operating at 10 GHz and designed for low incident power densities ranging from 0.1-100 µW/cm2. The array consists of unit-cell sequentially-fed four-element patch antenna subarrays designed to receive incident waves with circular polarization. The incident power is converted to dc using a single-ended Schottky diode rectifier. The rectifier is first characterized over input power and dc load individually and with a single sub-array. A 4-to-1 RF power-combining network is designed to further improve RF-to-dc conversion efficiency and output power at the lower-bound power density of 0.1 µW/cm2. A three-layer PCB with off-the-shelf components enables straightforward scaling to larger apertures.","PeriodicalId":6784,"journal":{"name":"2020 IEEE/MTT-S International Microwave Symposium (IMS)","volume":"52 1","pages":"992-995"},"PeriodicalIF":0.0000,"publicationDate":"2020-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2020 IEEE/MTT-S International Microwave Symposium (IMS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IMS30576.2020.9223970","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 4
Abstract
This work presents an RF power-combined rectenna array operating at 10 GHz and designed for low incident power densities ranging from 0.1-100 µW/cm2. The array consists of unit-cell sequentially-fed four-element patch antenna subarrays designed to receive incident waves with circular polarization. The incident power is converted to dc using a single-ended Schottky diode rectifier. The rectifier is first characterized over input power and dc load individually and with a single sub-array. A 4-to-1 RF power-combining network is designed to further improve RF-to-dc conversion efficiency and output power at the lower-bound power density of 0.1 µW/cm2. A three-layer PCB with off-the-shelf components enables straightforward scaling to larger apertures.