{"title":"非线性微波和射频应用的GaN和GaAs HEMT通道电荷模型","authors":"A. Parker","doi":"10.1109/IMS30576.2020.9223994","DOIUrl":null,"url":null,"abstract":"An explicit energy-based expression for HEMT channel charge is proposed. The expression is a compact formulation that is superior for design and simulation tools. As an advancement over existing approaches, the new expression offers the well-behaved high-order linearity that is critical for wireless applications.","PeriodicalId":6784,"journal":{"name":"2020 IEEE/MTT-S International Microwave Symposium (IMS)","volume":"15 1","pages":"424-427"},"PeriodicalIF":0.0000,"publicationDate":"2020-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"GaN and GaAs HEMT Channel Charge Model for Nonlinear Microwave and RF Applications\",\"authors\":\"A. Parker\",\"doi\":\"10.1109/IMS30576.2020.9223994\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"An explicit energy-based expression for HEMT channel charge is proposed. The expression is a compact formulation that is superior for design and simulation tools. As an advancement over existing approaches, the new expression offers the well-behaved high-order linearity that is critical for wireless applications.\",\"PeriodicalId\":6784,\"journal\":{\"name\":\"2020 IEEE/MTT-S International Microwave Symposium (IMS)\",\"volume\":\"15 1\",\"pages\":\"424-427\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2020-08-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2020 IEEE/MTT-S International Microwave Symposium (IMS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IMS30576.2020.9223994\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2020 IEEE/MTT-S International Microwave Symposium (IMS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IMS30576.2020.9223994","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
GaN and GaAs HEMT Channel Charge Model for Nonlinear Microwave and RF Applications
An explicit energy-based expression for HEMT channel charge is proposed. The expression is a compact formulation that is superior for design and simulation tools. As an advancement over existing approaches, the new expression offers the well-behaved high-order linearity that is critical for wireless applications.
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