使用缝片的射频/毫米波小芯片的多片集成:建模、制造和表征

Ting Zheng, Paul K. Jo, Sreejith Kochupurackal Rajan, M. Bakir
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引用次数: 1

摘要

介绍了一种射频与数字芯片无缝拼接的多晶片集成技术。在该技术中,采用具有可压缩微互连(CMIs)的缝合芯片来实现小芯片之间的低损耗和密集互连。演示了一个使用集成cmi的熔融硅缝片的测试平台,包括建模、制造、组装和表征。在30ghz工作频率下,500微米长的缝片信号链路的插入损耗小于0.4 dB。模拟的1000微米缝片信号链路的眼图在50 Gbps数据速率下具有清晰的开口。此外,从该试验台提取了cmi的s参数,在30 GHz下插入损耗小于0.17 dB。对基于硅中间层的互连进行了基准测试。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Polylithic Integration for RF/MM-Wave Chiplets using Stitch-Chips: Modeling, Fabrication, and Characterization
A polylithic integration technology is demonstrated for seamless stitching of RF and digital chiplets. In this technology, stitch-chips with compressible microinterconnects (CMIs) are used for low-loss and dense interconnection between chiplets. A testbed using fused-silica stitch-chips with integrated CMIs is demonstrated including modeling, fabrication, assembly, and characterization. A 500 µm-long stitch-chip signal link is measured to have less than 0.4 dB insertion loss up to 30 GHz. A simulated eye diagram for 1000 µm-long stitch-chip signal link has a clear opening at 50 Gbps data rate. Moreover, the S-parameters of the CMIs are extracted from this testbed and show less than 0.17 dB insertion loss up to 30 GHz. Benchmarking to silicon interposer based interconnection is also reported.
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