2020 47th IEEE Photovoltaic Specialists Conference (PVSC)最新文献_第10页

Novel Monocrystalline Silicon Texturing for supporting nano- to polycrystalline layers 支持纳米到多晶层的新型单晶硅纹理

2020 47th IEEE Photovoltaic Specialists Conference (PVSC) Pub Date : 2020-06-14 DOI: 10.1109/PVSC45281.2020.9300643

Thierry de Vrijer, A. Smets

{"title":"Novel Monocrystalline Silicon Texturing for supporting nano- to polycrystalline layers","authors":"Thierry de Vrijer, A. Smets","doi":"10.1109/PVSC45281.2020.9300643","DOIUrl":"https://doi.org/10.1109/PVSC45281.2020.9300643","url":null,"abstract":"Crystalline silicon tandems with perovskites, CIGS and nanocrystalline silicon, as well as the TOPcon design are incompatible with the conventional pyramidal surface texture of silicon. Three texturing approaches, using alkaline and/or acidic wet chemical etches, are investigated in this work, that can lead to the crack-free growth of a nano- to poly-crystalline silicon material on textured surfaces. Without acidic smoothening, the fraction of <111> pyramidal surface coverage has to remain relatively small to prevent crack formation during crystalline growth. Applying an acidic etch as a function of time continuously smoothens surface features. This shifts the reflection to wider scattering angles and results in higher total reflected intensity with respect to the conventional texture, making it an interesting option for a wide variety of tandem pv applications. Finally we demonstrate crater like features on a <100> monocrystalline silicon surface using an etching process inlcuding a sacrificial layer. These craters increases light scattering into wider angles, but to a lesser extent than the former approach.","PeriodicalId":6773,"journal":{"name":"2020 47th IEEE Photovoltaic Specialists Conference (PVSC)","volume":"19 1","pages":"0976-0978"},"PeriodicalIF":0.0,"publicationDate":"2020-06-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85043136","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Indoor characterisation of thin-film PV modules installed for 4.6 years in desert conditions 在沙漠条件下安装了4.6年的薄膜光伏组件的室内特性

2020 47th IEEE Photovoltaic Specialists Conference (PVSC) Pub Date : 2020-06-14 DOI: 10.1109/PVSC45281.2020.9300986

Ahmad Alheloo, J. John, Omar Albadwawi, Ali Almheiri, Hebatalla Alhamadani, Shaikha Hassan, A. Alnuaimi

引用次数: 2

Determination of Series Resistance in CdSeTe/CdTe Solar Cells by the Jsc–Voc Method Jsc-Voc法测定CdSeTe/CdTe太阳能电池串联电阻

2020 47th IEEE Photovoltaic Specialists Conference (PVSC) Pub Date : 2020-06-14 DOI: 10.1109/PVSC45281.2020.9300880

Carey Reich, A. Onno, Alexandra M. Bothwell, Anna Kindvall, Z. Holman, W. Sampath

引用次数: 0

Numerical Simulations of Time-Resolved Photoluminescence in CdSexTe1-x/CdTe Solar Cells CdSexTe1-x/CdTe太阳能电池时间分辨光致发光的数值模拟

2020 47th IEEE Photovoltaic Specialists Conference (PVSC) Pub Date : 2020-06-14 DOI: 10.1109/PVSC45281.2020.9300736

J. Moseley, D. Krasikov, D. Kuciauskas

引用次数: 1

Firing stability of n-type poly-Si on oxide junctions formed by quartz tube annealing 石英管退火形成的n型多晶硅氧化物结的烧成稳定性

2020 47th IEEE Photovoltaic Specialists Conference (PVSC) Pub Date : 2020-06-14 DOI: 10.1109/PVSC45281.2020.9300849

C. Hollemann, F. Haase, J. Krügener, R. Brendel, R. Peibst

{"title":"Firing stability of n-type poly-Si on oxide junctions formed by quartz tube annealing","authors":"C. Hollemann, F. Haase, J. Krügener, R. Brendel, R. Peibst","doi":"10.1109/PVSC45281.2020.9300849","DOIUrl":"https://doi.org/10.1109/PVSC45281.2020.9300849","url":null,"abstract":"Passivating contacts formed by poly-Si on oxide (POLO) junctions yield high passivation qualities after an appropriate annealing process at temperatures between 800°C and 1050°C. In today's typical cell process, firing is applied in the end of cell production mainly to form screen printed contacts. Thus, a high stability of the passivation quality against this firing process is required - and also expected since a previous high-temperature process for POLO junction formation implies a much higher thermal budget. However, in this work we found a significant decrease in effective lifetimes of up to 75% for n-type POLO samples with ~ 1.5 nm interfacial oxide at firing temperatures of 620°C to 900°C. This holds without a supply of hydrogen (no capping layers). Experiments with hydrogen-rich dielectric capping layers show, however, that a coating with AlOx:H as opposed to SiNy:H (n = 2.05), can significantly increase the stability of the passivation upon firing. Capacitance-voltage measurements show that the saturation current density correlates to the density of defect states at the SiOx/c-Si interface when varying the firing temperature. Although firing with hydrogen supplying layers such as AlOx:H seems to be viable, our results may indicate that the chemical configuration of the SiOx/Si interface changes from Si-O to Si-H bonds upon firing. If this hypothesis holds true, possible implications on the long-term stability of the passivation quality should be evaluated.","PeriodicalId":6773,"journal":{"name":"2020 47th IEEE Photovoltaic Specialists Conference (PVSC)","volume":"43 1","pages":"1274-1278"},"PeriodicalIF":0.0,"publicationDate":"2020-06-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"79409134","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 5

A Novel Method to Evaluate Irradiance in PV Field without Irradiance Sensors 一种无需辐照度传感器评估光伏场辐照度的新方法

2020 47th IEEE Photovoltaic Specialists Conference (PVSC) Pub Date : 2020-06-14 DOI: 10.1109/PVSC45281.2020.9300796

Li Feng, F. Hamelmann, Jingwei Zhang, Kun Ding, Matthias Diehl, Thomas Pfeil, Steffen Brandt, Werner Friedrich, N. Amin

{"title":"A Novel Method to Evaluate Irradiance in PV Field without Irradiance Sensors","authors":"Li Feng, F. Hamelmann, Jingwei Zhang, Kun Ding, Matthias Diehl, Thomas Pfeil, Steffen Brandt, Werner Friedrich, N. Amin","doi":"10.1109/PVSC45281.2020.9300796","DOIUrl":"https://doi.org/10.1109/PVSC45281.2020.9300796","url":null,"abstract":"In order to develop scientific research on the performance analysis and faults detection for monitoring status in photovoltaic (PV) array, an accurate and reliable irradiance evaluation are required. The mathematical expressions for irradiance evaluation at module level and array level are presented by the measured current and voltage of the PV module and PV array. The proposed method is verified with three typical weathers and a big dataset of one year. The results of module level show that the proposed method has performed good R2 errors of 0.9957 on a sunny day, 0.9978 on a cloudy day and 0.9898 on a day with low irradiance. The average percentage errors are 4.9%., 7.4% and 8.3% respectively. At the array level, the average error for one year is achieved by 6.51%., and 50% of average irradiance ranges are from 200 W/m2 to 600 W/m2 during the whole year. It is proved to be rarely affected by uncertainties from weather changes. The proposed method is suitable to calculate irradiance and obtain input energy of PV array in engineering application.","PeriodicalId":6773,"journal":{"name":"2020 47th IEEE Photovoltaic Specialists Conference (PVSC)","volume":"48 1","pages":"2496-2501"},"PeriodicalIF":0.0,"publicationDate":"2020-06-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"79759107","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Insights into Na+ Diffusion in Silicon Modules under Operating Conditions: Measuring Low Concentrations by D-SIMS 在工作条件下对硅模块中Na+扩散的见解:用D-SIMS测量低浓度

2020 47th IEEE Photovoltaic Specialists Conference (PVSC) Pub Date : 2020-06-14 DOI: 10.1109/PVSC45281.2020.9300773

Jacob Clenney, Erick M Loran, G. von Gastrow, D. Fenning, R. Meier, M. Bertoni

{"title":"Insights into Na+ Diffusion in Silicon Modules under Operating Conditions: Measuring Low Concentrations by D-SIMS","authors":"Jacob Clenney, Erick M Loran, G. von Gastrow, D. Fenning, R. Meier, M. Bertoni","doi":"10.1109/PVSC45281.2020.9300773","DOIUrl":"https://doi.org/10.1109/PVSC45281.2020.9300773","url":null,"abstract":"Sodium induced shunting under an electric field is a challenging reliability issue in crystalline Si solar modules. THe source of this Potential-Induced Degradation of the Shunting type (PID-s) is well understood [1] and its influence on power loss has been intensively studied based on phenomenological models on cell or module level relating the experimental power-loss to stressing parameters (time, temperature, voltage) [1]. However, little is known about the Na ion migration kinetics, responsible for PID on a microscopic level, and its quantitative relation to the efficiency degradation. In this paper we present our investigations of sodium ion migration in Ethylene-Vinyl Acetate (EVA) and silicon through Dynamic Secondary Ion Mass Spectroscopy (D-SIMS). Each sample was annealed at field relevant temperatures from 60–90 °C to address typical migration mechanisms of common PV installations. Analysis of the SIMS migration profiles revealed a diffusivity constant D0,EVA = 0.09 ± 0.14 cm2/s and an activation energy EA,EVA = 0.85 ± .04 eV for Na in EVA and diffusivities higher than extrapolated literature values in silicon (D0,Si = (3.03 ± 2.42)x10−5 cm2/s, and EA,Si = 0.98 ± 0.02 eV). The new insight will be included in a drift-diffusion based degradation model accounting for the partition coefficient across all relevant interfaces. This model can assist in predicting PID-failure in the field based on the given mudle stack and the diffusion of Na+ through each material. This tool can be used for process optimization as well as material selection significantly reducing the cost and time to validate a technology.","PeriodicalId":6773,"journal":{"name":"2020 47th IEEE Photovoltaic Specialists Conference (PVSC)","volume":"3 1","pages":"0863-0867"},"PeriodicalIF":0.0,"publicationDate":"2020-06-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84550830","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

Proton induced degradation of liquid phase crystallized poly-Si thin-film solar cells 质子诱导降解液相结晶多晶硅薄膜太阳能电池

2020 47th IEEE Photovoltaic Specialists Conference (PVSC) Pub Date : 2020-06-14 DOI: 10.1109/PVSC45281.2020.9300392

Tim Frijnts, C. Pellegrino, S. Gall, H. Neitzert

引用次数: 0

Transparent conductive polycrystalline Ti and H co-doped In2O3 films by RF sputtering technique 采用射频溅射技术制备透明导电多晶Ti和H共掺杂In2O3薄膜

2020 47th IEEE Photovoltaic Specialists Conference (PVSC) Pub Date : 2020-06-14 DOI: 10.1109/PVSC45281.2020.9300616

G.H. Wang, C. Shi, L. Zhao, L. Mo, H. Diao, W. Wang

引用次数: 0

Influence of Process Parameters and Absorber Thickness on Efficiency of Polycrystalline CdSeTe/CdTe Thin Film Solar Cells 工艺参数和吸收层厚度对多晶CdSeTe/CdTe薄膜太阳能电池效率的影响

2020 47th IEEE Photovoltaic Specialists Conference (PVSC) Pub Date : 2020-06-14 DOI: 10.1109/PVSC45281.2020.9300840

T. Shimpi, Carey Reich, A. Danielson, A. Munshi, Anna Kindvall, Ramesh Pandey, K. Barth, W. Sampath

引用次数: 2