支持纳米到多晶层的新型单晶硅纹理

Thierry de Vrijer, A. Smets
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引用次数: 0

摘要

晶体硅与钙钛矿、CIGS和纳米晶硅的串联以及TOPcon设计与传统的硅金字塔表面结构不相容。本研究研究了三种织构方法,分别使用碱性和/或酸性湿化学蚀刻,这三种方法可以导致纳米到多晶硅材料在织构表面上无裂纹生长。没有酸平滑,金字塔表面覆盖的比例必须保持相对较小,以防止在晶体生长过程中形成裂纹。应用酸性蚀刻作为时间的函数连续平滑表面特征。这将反射转移到更宽的散射角度,并且相对于传统纹理产生更高的总反射强度,使其成为各种串联pv应用的有趣选择。最后,我们在单晶硅表面使用蚀刻工艺(包括牺牲层)展示了坑状特征。这些陨石坑增加了光散射到更宽的角度,但比前一种方法的程度要小。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Novel Monocrystalline Silicon Texturing for supporting nano- to polycrystalline layers
Crystalline silicon tandems with perovskites, CIGS and nanocrystalline silicon, as well as the TOPcon design are incompatible with the conventional pyramidal surface texture of silicon. Three texturing approaches, using alkaline and/or acidic wet chemical etches, are investigated in this work, that can lead to the crack-free growth of a nano- to poly-crystalline silicon material on textured surfaces. Without acidic smoothening, the fraction of <111> pyramidal surface coverage has to remain relatively small to prevent crack formation during crystalline growth. Applying an acidic etch as a function of time continuously smoothens surface features. This shifts the reflection to wider scattering angles and results in higher total reflected intensity with respect to the conventional texture, making it an interesting option for a wide variety of tandem pv applications. Finally we demonstrate crater like features on a <100> monocrystalline silicon surface using an etching process inlcuding a sacrificial layer. These craters increases light scattering into wider angles, but to a lesser extent than the former approach.
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