Jsc-Voc法测定CdSeTe/CdTe太阳能电池串联电阻

Carey Reich, A. Onno, Alexandra M. Bothwell, Anna Kindvall, Z. Holman, W. Sampath
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引用次数: 0

摘要

虽然通常用于硅太阳能电池表征,但测定串联电阻(Rs)的Suns - voc方法很少用于CdTe及其合金。然而,相对于通常用于CdTe领域的斜率法,它是有利的,因为它测量的是太阳能电池工作时最大功率点的串联电阻。利用$\ mathm{太阳}- $ mathm {V}_{\ mathm {oc}}、$ mathm {J}_{\ mathm {sc}}- $ mathm {V}_{\ mathm {c}}$两个不同的$\ mathm {CdSeTe}/\ mathm {CdTe}$太阳能电池结构$\ mathm {R}_{\ mathm {s}}$的自一致前驱体,我们确定$\ mathm {R}_{\ mathm {s}}$为0.96 μcm2和2.72 μcm2,重复测量显示偏差很小。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Determination of Series Resistance in CdSeTe/CdTe Solar Cells by the Jsc–Voc Method
While commonly used in Si solar cell characterization, the Suns– Vocmethod of determining series resistance (Rs) is rarely used for CdTe and its alloys. However, it is advantageous relative to the slope method–commonly used in the CdTe community–because it measures series resistance at the maximum power point, at which a solar cell operates. Using the self-consistent predecessor to $\mathrm{Suns}-\mathrm{V}_{\mathrm{oc}}, \mathrm{J}_{\mathrm{sc}}-\mathrm{V}_{\mathrm{oc}}$, we determine $\mathrm{R}_{\mathrm{s}}$ of two different $\mathrm{CdSeTe}/\mathrm{CdTe}$ solar cell structures to be 0.96 and 2.72 μcm2, with repeated measurements showing little deviation.
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