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2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)最新文献

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Efficient Coupled-mode space based Non-Equilibrium Green’s Function Approach for Modeling Quantum Transport and Variability in Vertically Stacked SiNW FETs 垂直堆叠SiNW场效应管中量子输运和变率建模的高效耦合模空间非平衡格林函数方法
2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) Pub Date : 2019-09-01 DOI: 10.1109/SISPAD.2019.8870400
V. Thirunavukkarasu, H. Carrillo-Nuñez, F. D. Alema, S. Berrada, O. Badami, C. Medina-Bailón, T. Datta, J. Lee, Y. Guen, V. Georgiev, A. Asenov
{"title":"Efficient Coupled-mode space based Non-Equilibrium Green’s Function Approach for Modeling Quantum Transport and Variability in Vertically Stacked SiNW FETs","authors":"V. Thirunavukkarasu, H. Carrillo-Nuñez, F. D. Alema, S. Berrada, O. Badami, C. Medina-Bailón, T. Datta, J. Lee, Y. Guen, V. Georgiev, A. Asenov","doi":"10.1109/SISPAD.2019.8870400","DOIUrl":"https://doi.org/10.1109/SISPAD.2019.8870400","url":null,"abstract":"In this paper we present state of the art coupled-mode space based Non-Equilibrium Green Function approach for modeling quantum transport accurately in the vertically stacked Silicon nanowire (SiNW) FETs. Random discrete dopants (RDD) and metal grain granularity (MGG) induced variability in stacked SiNW FETs are also investigated. Furthermore, charge spectrum, current spectrum w.r.t. sub bands and the space-resolved Local Density of States (LDOS) corresponding to the location of band edge are analyzed in detail. The newly developed flexible and computationally efficient models implemented in quantum transport simulation tool NESS provides valuable insights on the effect of RDD and MGG variability on Sub-Threshold Swing (SS), Threshold Voltage $( mathrm {V}_{TH})$ shift, On/Off Current $( mathrm {I}_{ON}/ mathrm {I}_{OFF})$ ratio and quantum confined charge transport mechanism.","PeriodicalId":6755,"journal":{"name":"2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"9 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"87772458","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Trap Dynamics based 3D Kinetic Monte Carlo Simulation for Reliability Evaluation of UTBB MOSFETs 基于陷阱动力学的三维动力学蒙特卡罗模拟用于UTBB mosfet可靠性评估
2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) Pub Date : 2019-09-01 DOI: 10.1109/SISPAD.2019.8870505
Wangyong Chen, Linlin Cai, Xiaoyan Liu, G. Du
{"title":"Trap Dynamics based 3D Kinetic Monte Carlo Simulation for Reliability Evaluation of UTBB MOSFETs","authors":"Wangyong Chen, Linlin Cai, Xiaoyan Liu, G. Du","doi":"10.1109/SISPAD.2019.8870505","DOIUrl":"https://doi.org/10.1109/SISPAD.2019.8870505","url":null,"abstract":"Trap dynamics based 3D Kinetic Monte Carlo (KMC) simulator is developed to offer physical insights into the electrical characteristics degradation and quantitative reliability evaluation for advanced MOSFETs. The physics-based 3D KMC simulation enables to reproduce the evolution of stress-induced charge distribution in the multi-layer dielectrics and identify the trap impact on the degradation of device performance. Simulation results of UTBB FDSOI MOSFETs reveal that assumption of the uniform charge distribution in the dielectrics induced by stress underestimates the statistical degradation and variability. It also shows that the higher intrinsic trap density of back-gate oxide leads to the larger degradation and its variability, especially for the increased back-gate bias case.","PeriodicalId":6755,"journal":{"name":"2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"45 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"77671625","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Numerical Investigation of the Leakage Current and Blocking Capabilities of High-Power Diodes with Doped DLC Passivation Layers 掺DLC钝化层的大功率二极管泄漏电流和阻流能力的数值研究
2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) Pub Date : 2019-09-01 DOI: 10.1109/SISPAD.2019.8870354
L. Balestra, S. Reggiani, A. Gnudi, E. Gnani, G. Baccarani, J. Dobrzynska, J. Vobecký
{"title":"Numerical Investigation of the Leakage Current and Blocking Capabilities of High-Power Diodes with Doped DLC Passivation Layers","authors":"L. Balestra, S. Reggiani, A. Gnudi, E. Gnani, G. Baccarani, J. Dobrzynska, J. Vobecký","doi":"10.1109/SISPAD.2019.8870354","DOIUrl":"https://doi.org/10.1109/SISPAD.2019.8870354","url":null,"abstract":"Diamond-like carbon (DLC) is a very attractive material for Microelectronics, as it can be used to create robust passivation layers in semiconductor devices. In this work, the modelling of DLC in a TCAD framework is addressed, with special attention to the role played as the bevel coating of large-area high-voltage diodes. The TCAD simulations are nicely compared with experiments, giving rise to a detailed explanation of the role played by the DLC conductivity on the diode performance.","PeriodicalId":6755,"journal":{"name":"2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"22 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74288108","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Multiscale Modeling of Charge Trapping in Molecule Based Flash Memories 基于分子的快闪存储器中电荷捕获的多尺度建模
2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) Pub Date : 2019-09-01 DOI: 10.1109/SISPAD.2019.8870518
O. Badami, T. Sadi, V. Georgiev, F. Adamu-Lema, V. Thirunavukkarasu, J. Ding, A. Asenov
{"title":"Multiscale Modeling of Charge Trapping in Molecule Based Flash Memories","authors":"O. Badami, T. Sadi, V. Georgiev, F. Adamu-Lema, V. Thirunavukkarasu, J. Ding, A. Asenov","doi":"10.1109/SISPAD.2019.8870518","DOIUrl":"https://doi.org/10.1109/SISPAD.2019.8870518","url":null,"abstract":"To keep up with the increase in demand for storing data, flash memories have been scaled down dramatically and stacked by the semiconductor industry. Furthermore, processing large data has highlighted the limitations of the von Neumann architecture. To overcome this, different types of memory devices like Resistive Random-Access Memories (RRAMs) have also gained a lot of importance. Hence, carrier dynamics in oxides has gained significant traction in recent years. In this work, we discuss the kinetic Monte Carlo methodology as implemented in our integrated simulation environment NESS (Nano-Electronic Simulation Software) that allows us to study carrier transport in the oxide using accurate physics based models. As an example, we study the retention characteristics in a molecule based flash memory.","PeriodicalId":6755,"journal":{"name":"2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"89 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74724149","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
A SPICE Compatible Compact Model for Process and Bias Dependence of HCD in HKMG FDSOI MOSFETs HCD在HKMG FDSOI mosfet中工艺和偏置依赖性的SPICE兼容紧凑模型
2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) Pub Date : 2019-09-01 DOI: 10.1109/sispad.2019.8870457
Uma Sharma, S. Mahapatra
{"title":"A SPICE Compatible Compact Model for Process and Bias Dependence of HCD in HKMG FDSOI MOSFETs","authors":"Uma Sharma, S. Mahapatra","doi":"10.1109/sispad.2019.8870457","DOIUrl":"https://doi.org/10.1109/sispad.2019.8870457","url":null,"abstract":"A SPICE compatible model is developed for the time kinetics of linear drain current drift (ΔI<inf>DLIN</inf>) under Hot Carrier Degradation (HCD) stress in 28 nm Fully Depleted Silicon On Insulator (FDSOI) n-channel FETs having High-K Metal Gate (HKMG) gate stack. The impact of varying the drain (V<inf>D</inf>), gate (V<inf>G</inf>) and body (V<inf>BB</inf>) biases is modeled. The framework is also capable of modeling the channel length (L<inf>CH</inf>) and gate-oxide thickness (T<inf>OX</inf>) variations. Impact of Self-Heating Effect (SHE) has also been taken into consideration during ΔI<inf>DLIN</inf> modeling.","PeriodicalId":6755,"journal":{"name":"2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"1 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"82195444","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
DFT study of graphene doping due to metal contacts 金属接触石墨烯掺杂的DFT研究
2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) Pub Date : 2019-09-01 DOI: 10.1109/SISPAD.2019.8870456
P. Khakbaz, F. Driussi, A. Gambi, Paolo Giannozzi, S. Venica, David Esseni, A. Gaho, S. Kataria, Max C. Lemme
{"title":"DFT study of graphene doping due to metal contacts","authors":"P. Khakbaz, F. Driussi, A. Gambi, Paolo Giannozzi, S. Venica, David Esseni, A. Gaho, S. Kataria, Max C. Lemme","doi":"10.1109/SISPAD.2019.8870456","DOIUrl":"https://doi.org/10.1109/SISPAD.2019.8870456","url":null,"abstract":"The experimental results of Metal-graphene (M-G) contact resistance RC have been investigated in-depth by means of Density Functional Theory (DFT). The simulations allowed us to build a consistent picture explaining the RC dependence on the metal contact materials employed in this work and on the applied back-gate voltage. In this respect, the M-G distance is paramount in determining the RC behavior.","PeriodicalId":6755,"journal":{"name":"2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"25 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"88520062","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Relationship between capacitance and conductance in MOS capacitors MOS电容器中电容与电导的关系
2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) Pub Date : 2019-09-01 DOI: 10.1109/SISPAD.2019.8870553
E. Caruso, J. Lin, S. Monaghan, K. Cherkaoui, L. Floyd, F. Gity, P. Palestri, D. Esseni, L. Selmi, P. Hurley
{"title":"Relationship between capacitance and conductance in MOS capacitors","authors":"E. Caruso, J. Lin, S. Monaghan, K. Cherkaoui, L. Floyd, F. Gity, P. Palestri, D. Esseni, L. Selmi, P. Hurley","doi":"10.1109/SISPAD.2019.8870553","DOIUrl":"https://doi.org/10.1109/SISPAD.2019.8870553","url":null,"abstract":"In this work, we describe how the frequency dependence of conductance (G) and capacitance (C) of a generic MOS capacitor results in peaks of the functions $mathrm {G}/omega$ and $-omega mathrm {dC}/mathrm {d}omega$. By means of TCAD simulations, we show that $mathrm {G}/omega$ and $-omega mathrm {dC}/mathrm {d}omega$ peak at the same value and at the same frequency for every bias point from accumulation to inversion. We illustrate how the properties of the peaks change with the semiconductor doping ($mathrm {N}_{mathrm {D}}$), oxide capacitance (Cox), minority carrier lifetime $(tau_{mathrm{g}})$, interface defect parameters ($mathrm {lt pgt N}_{mathrm {IT}}$, $sigma$) and majority carrier dielectric relaxation time $(tau_{mathrm {r}})$. Finally, we demonstrate how these insights on $mathrm {G}/omega$ and $-omega mathrm {dC}/mathrm {d}omega$ can be used to extract Cox, $mathrm {lt pgt N}_{mathrm {D}}$ and $tau_{mathrm {g}}$ from InGaAs MOSCAP measurements","PeriodicalId":6755,"journal":{"name":"2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"33 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"87362119","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Effective work-function tuning of TiN/HfO2/SiO2 gate-stack; a density functional tight binding study TiN/HfO2/SiO2栅极堆的有效工作函数调谐密度函数紧密结合研究
2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) Pub Date : 2019-09-01 DOI: 10.1109/SISPAD.2019.8870434
H. Ilatikhameneh, Hong-hyun Park, Zhengping Jiang, W. Choi, M. A. Pourghaderi, Jongchol Kim, U. Kwon, D. Kim
{"title":"Effective work-function tuning of TiN/HfO2/SiO2 gate-stack; a density functional tight binding study","authors":"H. Ilatikhameneh, Hong-hyun Park, Zhengping Jiang, W. Choi, M. A. Pourghaderi, Jongchol Kim, U. Kwon, D. Kim","doi":"10.1109/SISPAD.2019.8870434","DOIUrl":"https://doi.org/10.1109/SISPAD.2019.8870434","url":null,"abstract":"In this work, density functional tight binding (DFTB) calculations are used to study the characteristics of full gate stack TiN/HfO2/SiO2/Si and possible effective work-function (EWF) tuning options. First, the DFTB parameterization method to produce both electronic and repulsion information for all atom pairs is introduced briefly. Since the simulated gate-stack structure has thousands of atoms, conventional relaxation methods are computationally intensive. Hence a method to relax and passivate the material interfaces is introduced. Next, the impact of aluminum substitution is studied. It is shown that the change in EWF strongly depends on the atom which is substituting Aluminum; e.g. Aluminum substitutions of Hf and Ti show opposite impact on EWF. Finally, the origin of this different behavior is discussed.","PeriodicalId":6755,"journal":{"name":"2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"57 4 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90113299","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
SISPAD 2019 Author Index SISPAD 2019作者索引
2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) Pub Date : 2019-09-01 DOI: 10.1109/sispad.2019.8870433
{"title":"SISPAD 2019 Author Index","authors":"","doi":"10.1109/sispad.2019.8870433","DOIUrl":"https://doi.org/10.1109/sispad.2019.8870433","url":null,"abstract":"","PeriodicalId":6755,"journal":{"name":"2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"44 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"79406803","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Modeling 1/f and Lorenzian noise in III-V MOSFETs III-V型mosfet的1/f和Lorenzian噪声建模
2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) Pub Date : 2019-09-01 DOI: 10.1109/SISPAD.2019.8870548
E. Caruso, F. Bettetti, L. D. Linz, D. Pin, M. Segatto, P. Palestri
{"title":"Modeling 1/f and Lorenzian noise in III-V MOSFETs","authors":"E. Caruso, F. Bettetti, L. D. Linz, D. Pin, M. Segatto, P. Palestri","doi":"10.1109/SISPAD.2019.8870548","DOIUrl":"https://doi.org/10.1109/SISPAD.2019.8870548","url":null,"abstract":"We present an approach to model 1/f and random telegraph noise in TCAD combining the models for non-local tunneling to traps and generation/recombination noise. The TCAD results are compared with simple numerical expression to understand the influence of the device and trap parameters on the noise spectrum. The simulation deck is then used to compute the low-frequency noise spectrum in III-V MOSFETs using traps distributions extracted from multi-frequency C-V measurements.","PeriodicalId":6755,"journal":{"name":"2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"88 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"72694359","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
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