P. Khakbaz, F. Driussi, A. Gambi, Paolo Giannozzi, S. Venica, David Esseni, A. Gaho, S. Kataria, Max C. Lemme
{"title":"DFT study of graphene doping due to metal contacts","authors":"P. Khakbaz, F. Driussi, A. Gambi, Paolo Giannozzi, S. Venica, David Esseni, A. Gaho, S. Kataria, Max C. Lemme","doi":"10.1109/SISPAD.2019.8870456","DOIUrl":null,"url":null,"abstract":"The experimental results of Metal-graphene (M-G) contact resistance RC have been investigated in-depth by means of Density Functional Theory (DFT). The simulations allowed us to build a consistent picture explaining the RC dependence on the metal contact materials employed in this work and on the applied back-gate voltage. In this respect, the M-G distance is paramount in determining the RC behavior.","PeriodicalId":6755,"journal":{"name":"2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"25 1","pages":"1-4"},"PeriodicalIF":0.0000,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SISPAD.2019.8870456","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 4
Abstract
The experimental results of Metal-graphene (M-G) contact resistance RC have been investigated in-depth by means of Density Functional Theory (DFT). The simulations allowed us to build a consistent picture explaining the RC dependence on the metal contact materials employed in this work and on the applied back-gate voltage. In this respect, the M-G distance is paramount in determining the RC behavior.