Efficient Coupled-mode space based Non-Equilibrium Green’s Function Approach for Modeling Quantum Transport and Variability in Vertically Stacked SiNW FETs

2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) Pub Date : 2019-09-01 DOI:10.1109/SISPAD.2019.8870400

V. Thirunavukkarasu, H. Carrillo-Nuñez, F. D. Alema, S. Berrada, O. Badami, C. Medina-Bailón, T. Datta, J. Lee, Y. Guen, V. Georgiev, A. Asenov

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Abstract

In this paper we present state of the art coupled-mode space based Non-Equilibrium Green Function approach for modeling quantum transport accurately in the vertically stacked Silicon nanowire (SiNW) FETs. Random discrete dopants (RDD) and metal grain granularity (MGG) induced variability in stacked SiNW FETs are also investigated. Furthermore, charge spectrum, current spectrum w.r.t. sub bands and the space-resolved Local Density of States (LDOS) corresponding to the location of band edge are analyzed in detail. The newly developed flexible and computationally efficient models implemented in quantum transport simulation tool NESS provides valuable insights on the effect of RDD and MGG variability on Sub-Threshold Swing (SS), Threshold Voltage $( \mathrm {V}_{TH})$ shift, On/Off Current $( \mathrm {I}_{ON}/ \mathrm {I}_{OFF})$ ratio and quantum confined charge transport mechanism.

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垂直堆叠SiNW场效应管中量子输运和变率建模的高效耦合模空间非平衡格林函数方法

本文提出了一种基于空间耦合模式的非平衡格林函数方法，用于精确模拟垂直堆叠硅纳米线场效应管中的量子输运。随机离散掺杂剂(RDD)和金属晶粒粒度(MGG)引起的堆叠SiNW场效应管的变化也进行了研究。此外，还详细分析了子带的电荷谱、电流谱和带边缘位置对应的空间分辨局域态密度(LDOS)。在量子输运模拟工具NESS中实现的新开发的灵活且计算效率高的模型为RDD和MGG可变性对亚阈值摆幅(SS)、阈值电压$(\ mathm {V}_{TH})$位移、开/关电流$(\ mathm {I}_{on}/ \ mathm {I}_{Off})$比率和量子受限电荷输运机制的影响提供了有价值的见解。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)

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