Numerical Investigation of the Leakage Current and Blocking Capabilities of High-Power Diodes with Doped DLC Passivation Layers

Abstract

Diamond-like carbon (DLC) is a very attractive material for Microelectronics, as it can be used to create robust passivation layers in semiconductor devices. In this work, the modelling of DLC in a TCAD framework is addressed, with special attention to the role played as the bevel coating of large-area high-voltage diodes. The TCAD simulations are nicely compared with experiments, giving rise to a detailed explanation of the role played by the DLC conductivity on the diode performance.