发布求助
文献互助 智能选刊 最新文献

2013 Spanish Conference on Electron Devices最新文献

筛选
英文 中文
Static and dynamic characteristics of self-assembled InAs-GaAs quantum dot laser considering carrier recombination and carrier escape time by using circuit-level modeling 考虑载流子复合和载流子逃逸时间的自组装InAs-GaAs量子点激光器的静态和动态特性
2013 Spanish Conference on Electron Devices Pub Date : 2013-03-21 DOI: 10.1109/CDE.2013.6481349
M. Pa, F. Emami
{"title":"Static and dynamic characteristics of self-assembled InAs-GaAs quantum dot laser considering carrier recombination and carrier escape time by using circuit-level modeling","authors":"M. Pa, F. Emami","doi":"10.1109/CDE.2013.6481349","DOIUrl":"https://doi.org/10.1109/CDE.2013.6481349","url":null,"abstract":"Considering the excited state and the standard rate equations, this study provides a new circuit model for self-assembled quantum dot laser made by InGaAs/GaAs and investigates the performances of this kind of laser. The carrier dynamic effects on static and dynamic performances of self-assembled laser (QD) have been analyzed. We also show that quantum-dot lasers are quite sensitive to the crystal quality outside as well as inside quantum dots.","PeriodicalId":6614,"journal":{"name":"2013 Spanish Conference on Electron Devices","volume":"70 1","pages":"87-90"},"PeriodicalIF":0.0,"publicationDate":"2013-03-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"89885200","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
High efficient thin film CdTe solar cells 高效薄膜碲化镉太阳能电池
2013 Spanish Conference on Electron Devices Pub Date : 2013-03-21 DOI: 10.1109/CDE.2013.6481412
Ruilong Yang, Zhizhong Bai, Dezhao Wang, Deliang Wang
{"title":"High efficient thin film CdTe solar cells","authors":"Ruilong Yang, Zhizhong Bai, Dezhao Wang, Deliang Wang","doi":"10.1109/CDE.2013.6481412","DOIUrl":"https://doi.org/10.1109/CDE.2013.6481412","url":null,"abstract":"CdTe thin film solar cell with an absorber layer as thin as 0.5 μm was fabricated. An efficiency of 7.9 % was obtained for a 1-μm-thick CdTe solar cell. The experimental results presented in this study demonstrated that 1-μm-thick absorber layer is thick enough to fabricate CdTe solar cell with a decent efficiency. Formation of mono-grain CdS layer with grain size in submicron was fabricated. Heat treatment of a CdS precursor layer coated with a CdCl2 layer and under a high CdCl2 vapor pressure reduced oxide formation at the grain surface and promoted grain coalescence. High crystalline quality mono-grain CdS layer ensured homogenous intermixing of CdS and CdTe at the CdS/CdTe interface. A saturated junction leakage current in the order of 10-10 A/cm2 and a short-circuit current as high as 25.1 cm/cm2 were obtained for a mono-grain-CdS/CdTe solar cell. The corresponding solar cell efficiency is 14.6%.","PeriodicalId":6614,"journal":{"name":"2013 Spanish Conference on Electron Devices","volume":"1 1","pages":"341-344"},"PeriodicalIF":0.0,"publicationDate":"2013-03-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"88173554","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Low-cost system for full-wafer photoluminescence characterization of photovoltaic silicon 低成本光伏硅全晶圆光致发光表征系统
2013 Spanish Conference on Electron Devices Pub Date : 2013-03-21 DOI: 10.1109/CDE.2013.6481415
B. Moralejo, A. Tejero, O. Martínez, M. González, J. Jiménez, V. Parra
{"title":"Low-cost system for full-wafer photoluminescence characterization of photovoltaic silicon","authors":"B. Moralejo, A. Tejero, O. Martínez, M. González, J. Jiménez, V. Parra","doi":"10.1109/CDE.2013.6481415","DOIUrl":"https://doi.org/10.1109/CDE.2013.6481415","url":null,"abstract":"Photoluminescence imaging technique has recently emerged as a powerful tool for obtaining very quick sorting of silicon based solar wafers and cells. In this work, we report on a low-cost photoluminescence imaging system, paying special attention to the different constituting elements. Results on both commercial multicrystalline (mc) and seed-monocast (sm) Si wafers and solar cells are discussed.","PeriodicalId":6614,"journal":{"name":"2013 Spanish Conference on Electron Devices","volume":"57 1","pages":"353-356"},"PeriodicalIF":0.0,"publicationDate":"2013-03-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"86951424","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Boron diffused emitters passivated with Al2O3 films Al2O3膜钝化硼扩散发射体
2013 Spanish Conference on Electron Devices Pub Date : 2013-03-21 DOI: 10.1109/CDE.2013.6481409
G. Masmitjà, Pedro A. Ortega, G. López, E. Calle, M. Garcia, I. Martín, A. Orpella, C. Voz, R. Alcubilla
{"title":"Boron diffused emitters passivated with Al2O3 films","authors":"G. Masmitjà, Pedro A. Ortega, G. López, E. Calle, M. Garcia, I. Martín, A. Orpella, C. Voz, R. Alcubilla","doi":"10.1109/CDE.2013.6481409","DOIUrl":"https://doi.org/10.1109/CDE.2013.6481409","url":null,"abstract":"In this work we study the fabrication and characterization of boron diffused emitters using FZ c-Si(n) substrates. Emitter surface was passivated with Al2O3(25 nm thick) layers deposited by thermal atomic layer deposition ALD technique. This study covers a broad emitter sheet resistance Rsh range from 20 to 250 Ω/sq using both polished and textured wafers. Emitter electrical quality was tested by means of lifetime measurements using quasi-stationary photoconductance QSS-PC method. Dark saturation emitter current densities Joe's were extracted from lifetime measurements resulting in Joe's values ranging from 10 to 150 fA/cm2 depending on Rsh. These results are in the-state-of-the-art in boron emitter passivation.","PeriodicalId":6614,"journal":{"name":"2013 Spanish Conference on Electron Devices","volume":"8 1","pages":"329-332"},"PeriodicalIF":0.0,"publicationDate":"2013-03-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85353807","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Modelling the thermal conductivity of semiconductor NWs; a step forward to the increase of the thermoelectric figure of merit 模拟半导体NWs的热导率向前迈进了一步，增加了热电的优点
2013 Spanish Conference on Electron Devices Pub Date : 2013-03-21 DOI: 10.1109/CDE.2013.6481382
J. Anaya, J. Jiménez, T. Rodríguez
{"title":"Modelling the thermal conductivity of semiconductor NWs; a step forward to the increase of the thermoelectric figure of merit","authors":"J. Anaya, J. Jiménez, T. Rodríguez","doi":"10.1109/CDE.2013.6481382","DOIUrl":"https://doi.org/10.1109/CDE.2013.6481382","url":null,"abstract":"Low dimensional semiconductor structures are very promising for thermoelectric conversion. In particular, the thermal conductivity of semiconductor nanowires (NWs) can be engineered in order to enhance the thermoelectric figure of merit. Modeling the thermal conductivity of NWs is a step forward to the design of advanced thermoelectric devices.","PeriodicalId":6614,"journal":{"name":"2013 Spanish Conference on Electron Devices","volume":"313 1","pages":"219-222"},"PeriodicalIF":0.0,"publicationDate":"2013-03-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"82158189","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Modeling of the post-breakdown IG-VG-VD characteristics of La2O3-based MOS transistors la2o3基MOS晶体管击穿后IG-VG-VD特性的建模
2013 Spanish Conference on Electron Devices Pub Date : 2013-03-21 DOI: 10.1109/CDE.2013.6481391
E. Miranda, J. Suñé, T. Kawanago, K. Kakushima, H. Iwai
{"title":"Modeling of the post-breakdown IG-VG-VD characteristics of La2O3-based MOS transistors","authors":"E. Miranda, J. Suñé, T. Kawanago, K. Kakushima, H. Iwai","doi":"10.1109/CDE.2013.6481391","DOIUrl":"https://doi.org/10.1109/CDE.2013.6481391","url":null,"abstract":"A simple analytic model for the post-breakdown conduction characteristics in W/La<sub>2</sub>O<sub>3</sub>/p-type Si MOSFETs is reported. The model is based on the solution of the generalized diode equation and captures the behavior of the gate current (I<sub>G</sub>) as a function of the gate (V<sub>G</sub>) and drain (V<sub>D</sub>) voltages including both positive and negative biases. The devices were subjected to ramped voltage stress so as to induce the dielectric breakdown close to or at the transistor drain region.","PeriodicalId":6614,"journal":{"name":"2013 Spanish Conference on Electron Devices","volume":"25 1","pages":"257-260"},"PeriodicalIF":0.0,"publicationDate":"2013-03-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81116163","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Thin dielectric films grown by atomic layer deposition: Properties and applications 原子层沉积法生长的介质薄膜:性能和应用
2013 Spanish Conference on Electron Devices Pub Date : 2013-03-21 DOI: 10.1109/CDE.2013.6481327
F. Campabadal, J. M. Rafí, M. B. González, M. Zabala, O. Beldarrain, M. Acero, M. Duch
{"title":"Thin dielectric films grown by atomic layer deposition: Properties and applications","authors":"F. Campabadal, J. M. Rafí, M. B. González, M. Zabala, O. Beldarrain, M. Acero, M. Duch","doi":"10.1109/CDE.2013.6481327","DOIUrl":"https://doi.org/10.1109/CDE.2013.6481327","url":null,"abstract":"Atomic layer deposition of high-k dielectrics is currently identified to be an enabling technology for a variety of applications. An overview of the characteristics of the technique is presented and its limiting factors and opportunities discussed. Particular attention is paid to Al2O3 and HfO2 films deposited on silicon in terms of material and electrical characteristics for their use in MEMS and radiation detectors technologies and the effects of post-deposition annealing processing are discussed.","PeriodicalId":6614,"journal":{"name":"2013 Spanish Conference on Electron Devices","volume":"22 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2013-03-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"87238995","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Calculation of cell temperature in a HCPV module using Voc 用Voc计算HCPV模块的电池温度
2013 Spanish Conference on Electron Devices Pub Date : 2013-03-21 DOI: 10.1109/CDE.2013.6481406
E. Fernández, A. Loureiro, P. Rodrigo, F. Almonacid, J. I. Fernández, P. J. P. Higueras, G. Almonacid
{"title":"Calculation of cell temperature in a HCPV module using Voc","authors":"E. Fernández, A. Loureiro, P. Rodrigo, F. Almonacid, J. I. Fernández, P. J. P. Higueras, G. Almonacid","doi":"10.1109/CDE.2013.6481406","DOIUrl":"https://doi.org/10.1109/CDE.2013.6481406","url":null,"abstract":"Knowledge of solar cell operating temperature is critical to evaluate the energy performance of a HCPV module. However, the measurement of the cell temperature in HCPV modules is a very complex task due to the special features of these types of modules, so it is useful to find indirect methods to calculate this. DNI, cell temperature and I-V curves have been measured for one year in the Centre of Advanced Studies in Energy and Environment of the University of Jaen located in the south of Spain. Thanks to these measurements, cell temperature can be determinate as a function of Voc with a mean relative error of -0.38 %.","PeriodicalId":6614,"journal":{"name":"2013 Spanish Conference on Electron Devices","volume":"220 1","pages":"317-320"},"PeriodicalIF":0.0,"publicationDate":"2013-03-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"89128617","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 10
Laser induced single events in SRAMs ram中激光诱导的单事件
2013 Spanish Conference on Electron Devices Pub Date : 2013-03-21 DOI: 10.1109/CDE.2013.6481390
C. Palomar, I. Lopez-Calle, F. J. Franco, J. Agapito, J. G. Izquierdo
{"title":"Laser induced single events in SRAMs","authors":"C. Palomar, I. Lopez-Calle, F. J. Franco, J. Agapito, J. G. Izquierdo","doi":"10.1109/CDE.2013.6481390","DOIUrl":"https://doi.org/10.1109/CDE.2013.6481390","url":null,"abstract":"This paper is aimed at emulating the errors in semiconductor memories by space radiation with a pulsed laser that acts as an ion. A sensitivity map of the memory is performed identifying potential error areas and how many errors simultaneously occur.","PeriodicalId":6614,"journal":{"name":"2013 Spanish Conference on Electron Devices","volume":"66 1","pages":"253-256"},"PeriodicalIF":0.0,"publicationDate":"2013-03-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78180177","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Time-domain Monte Carlo simulations of resonant-circuit operation of GaN Gunn diodes GaN - Gunn二极管谐振电路工作的时域蒙特卡罗模拟
2013 Spanish Conference on Electron Devices Pub Date : 2013-02-01 DOI: 10.1109/CDE.2013.6481347
S. García, B. G. Vasallo, J. Mateos, T. González
{"title":"Time-domain Monte Carlo simulations of resonant-circuit operation of GaN Gunn diodes","authors":"S. García, B. G. Vasallo, J. Mateos, T. González","doi":"10.1109/CDE.2013.6481347","DOIUrl":"https://doi.org/10.1109/CDE.2013.6481347","url":null,"abstract":"The time-domain operation of GaAs, InP and GaN vertical n+n-nn+ Gunn diodes and GaN planar self-switching diodes (SSDs) is numerically investigated by using the Monte Carlo (MC) technique. To this end, the MC simulation of the intrinsic devices is coupled with the consistent solution of a parallel RLC resonant circuit connected in series. We show that equivalent operating conditions can be achieved by the direct application of a sinusoidal AC voltage superimposed to the DC component. By virtue of the larger saturation velocity of GaN, for a given diode length, oscillation frequencies are higher than for GaAs and InP structures. Current oscillations at frequencies as high as 560 GHz, with a DC to AC conversion efficiency of 0.3%, are predicted at the third harmonic in 1 μm-long GaN diodes. In a 0.5 μm-long GaN SSD, frequencies up to 275 GHz with an efficiency of 0.2% can be achieved, with the advantage of enhanced heat dissipation thanks to the planar geometry.","PeriodicalId":6614,"journal":{"name":"2013 Spanish Conference on Electron Devices","volume":"120 1","pages":"79-82"},"PeriodicalIF":0.0,"publicationDate":"2013-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"86144853","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
首页 上一页 下一页 尾页
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整，为了账户安全，请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
请完成安全验证×
相关产品
×
本文献相关产品
联系我们：info@booksci.cn Book学术提供免费学术资源搜索服务，方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号：481959085
Book学术官方微信