模拟半导体NWs的热导率向前迈进了一步，增加了热电的优点

2013 Spanish Conference on Electron Devices Pub Date : 2013-03-21 DOI:10.1109/CDE.2013.6481382

J. Anaya, J. Jiménez, T. Rodríguez

{"title":"模拟半导体NWs的热导率向前迈进了一步，增加了热电的优点","authors":"J. Anaya, J. Jiménez, T. Rodríguez","doi":"10.1109/CDE.2013.6481382","DOIUrl":null,"url":null,"abstract":"Low dimensional semiconductor structures are very promising for thermoelectric conversion. In particular, the thermal conductivity of semiconductor nanowires (NWs) can be engineered in order to enhance the thermoelectric figure of merit. Modeling the thermal conductivity of NWs is a step forward to the design of advanced thermoelectric devices.","PeriodicalId":6614,"journal":{"name":"2013 Spanish Conference on Electron Devices","volume":"313 1","pages":"219-222"},"PeriodicalIF":0.0000,"publicationDate":"2013-03-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Modelling the thermal conductivity of semiconductor NWs; a step forward to the increase of the thermoelectric figure of merit\",\"authors\":\"J. Anaya, J. Jiménez, T. Rodríguez\",\"doi\":\"10.1109/CDE.2013.6481382\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Low dimensional semiconductor structures are very promising for thermoelectric conversion. In particular, the thermal conductivity of semiconductor nanowires (NWs) can be engineered in order to enhance the thermoelectric figure of merit. Modeling the thermal conductivity of NWs is a step forward to the design of advanced thermoelectric devices.\",\"PeriodicalId\":6614,\"journal\":{\"name\":\"2013 Spanish Conference on Electron Devices\",\"volume\":\"313 1\",\"pages\":\"219-222\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2013-03-21\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2013 Spanish Conference on Electron Devices\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/CDE.2013.6481382\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 Spanish Conference on Electron Devices","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CDE.2013.6481382","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

低维半导体结构在热电转换领域具有广阔的应用前景。特别是，半导体纳米线(NWs)的热导率可以通过工程设计来提高热电性能。对NWs的热导率进行建模是向设计先进的热电器件迈出的一步。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Modelling the thermal conductivity of semiconductor NWs; a step forward to the increase of the thermoelectric figure of merit

Low dimensional semiconductor structures are very promising for thermoelectric conversion. In particular, the thermal conductivity of semiconductor nanowires (NWs) can be engineered in order to enhance the thermoelectric figure of merit. Modeling the thermal conductivity of NWs is a step forward to the design of advanced thermoelectric devices.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2013 Spanish Conference on Electron Devices

自引率

0.00%

发文量