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2013 Spanish Conference on Electron Devices最新文献

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Study of RFIDs with SOI technology for UWB 基于SOI技术的超宽带rfid研究
2013 Spanish Conference on Electron Devices Pub Date : 2013-03-21 DOI: 10.1109/CDE.2013.6481348
R. Rodríguez, B. González, J. García, M. Marrero-Martin, A. Hernández
{"title":"Study of RFIDs with SOI technology for UWB","authors":"R. Rodríguez, B. González, J. García, M. Marrero-Martin, A. Hernández","doi":"10.1109/CDE.2013.6481348","DOIUrl":"https://doi.org/10.1109/CDE.2013.6481348","url":null,"abstract":"The objective of this work is to study the possibility of implementing SOI rectifiers for UWB RFIDs with undoped Double Gate MOSFETs (DG-MOSFETs). For that purpose we use two commercial TCAD tools, Sentaurus Device (created by Synopsys) and ADS (created by Agilent), wherein a large signal circuit model derived for the transistors is implemented with Verilog-A. Once the DG-MOSFETs output characteristics are fit, the rectifier performance at high frequencies is simulated; numerical and electrical results are successfully compared.","PeriodicalId":6614,"journal":{"name":"2013 Spanish Conference on Electron Devices","volume":"4 1","pages":"83-86"},"PeriodicalIF":0.0,"publicationDate":"2013-03-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"75166310","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Gadolinium scandate by high pressure sputtering as a high-k dielectric 用高压溅射法制备钆作为高k介电材料
2013 Spanish Conference on Electron Devices Pub Date : 2013-03-21 DOI: 10.1109/CDE.2013.6481331
P. C. Feijoo, M. Pampillón, E. Andrés
{"title":"Gadolinium scandate by high pressure sputtering as a high-k dielectric","authors":"P. C. Feijoo, M. Pampillón, E. Andrés","doi":"10.1109/CDE.2013.6481331","DOIUrl":"https://doi.org/10.1109/CDE.2013.6481331","url":null,"abstract":"We demonstrate the viability of gadolinium scandate (Gd<sub>2-x</sub>Sc<sub>x</sub>O<sub>3</sub>) deposition by high pressure sputtering from targets of its binary compounds (gadolinium and scandium oxides), followed by an anneal in forming gas. Pt/8 nm Gd<sub>2-x</sub>Sc<sub>x</sub>O<sub>3</sub>/n-Si MIS devices were fabricated and characterized. Gadolinium scandate is found to be more stable than ScO<sub>x</sub> and GdO<sub>x</sub> in contact with Si. These three dielectrics show a high quality interface, with low leakage currents.","PeriodicalId":6614,"journal":{"name":"2013 Spanish Conference on Electron Devices","volume":"49 1","pages":"17-20"},"PeriodicalIF":0.0,"publicationDate":"2013-03-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"73100617","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Towards high-k integration with III-V channels: Interface optimization of high pressure sputtered gadolinium oxide on indium phospide 与III-V通道的高k集成:高压溅射氧化钆与磷化铟的界面优化
2013 Spanish Conference on Electron Devices Pub Date : 2013-03-21 DOI: 10.1109/CDE.2013.6481333
E. San Andrés, M. Pampillón, C. Cañadilla, P. C. Feijoo, A. del Prado
{"title":"Towards high-k integration with III-V channels: Interface optimization of high pressure sputtered gadolinium oxide on indium phospide","authors":"E. San Andrés, M. Pampillón, C. Cañadilla, P. C. Feijoo, A. del Prado","doi":"10.1109/CDE.2013.6481333","DOIUrl":"https://doi.org/10.1109/CDE.2013.6481333","url":null,"abstract":"We studied the electrical properties of metal-oxide-semiconductor devices based on Gd2O3 deposited on InP by high pressure sputtering and a novel plasma oxidation process. The resulting devices show fully functional capacitance curves., indicating an unpinned Fermi level. The samples were annealed in forming gas at temperatures up to 550°C. We studied the interface trap density of the devices. We found out that with increasing annealing temperature the defect content decreases but at 550°C the capacitance drops and the leakage current increases., indicating a dielectric degradation.","PeriodicalId":6614,"journal":{"name":"2013 Spanish Conference on Electron Devices","volume":"35 1","pages":"25-28"},"PeriodicalIF":0.0,"publicationDate":"2013-03-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81572760","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Ceramic capacitive pressure sensor based on LTCC technology 基于LTCC技术的陶瓷电容式压力传感器
2013 Spanish Conference on Electron Devices Pub Date : 2013-03-21 DOI: 10.1109/CDE.2013.6481355
J. M. Fernández-Sanjuán, N. Bonet, J. G. Rodriguez, F. Ramos, J. Sieiro, J. Lopez-Villegas, N. Vidal, A. Cirera
{"title":"Ceramic capacitive pressure sensor based on LTCC technology","authors":"J. M. Fernández-Sanjuán, N. Bonet, J. G. Rodriguez, F. Ramos, J. Sieiro, J. Lopez-Villegas, N. Vidal, A. Cirera","doi":"10.1109/CDE.2013.6481355","DOIUrl":"https://doi.org/10.1109/CDE.2013.6481355","url":null,"abstract":"This work is focused on the design and fabrication of a capacitive ceramic pressure sensor using LTCC technology. The multilayer technology helps us to tailor the thickness of the flexible membrane depending on the pressure range we are working in. In the bottom part of the substrate a entire signal conditioning electronics is located. An integrated circuit suitably chosen for this application measures the capacitance and converts it to a proportional voltage to the pressure. The present paper will deeply discuss technological details about LTCC technology applied to these devices, as well as hot aspects of the design such as planarity of the membrane, its thickness, gap between electrodes, electrodes and guard rings. Results of the devices taking into account these aspects will be also shown.","PeriodicalId":6614,"journal":{"name":"2013 Spanish Conference on Electron Devices","volume":"76 1","pages":"111-114"},"PeriodicalIF":0.0,"publicationDate":"2013-03-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81097589","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
A Monte Carlo Study of electron transport in suspended monolayer graphene 悬浮单层石墨烯中电子输运的蒙特卡罗研究
2013 Spanish Conference on Electron Devices Pub Date : 2013-03-21 DOI: 10.1109/CDE.2013.6481371
R. Rengel, C. Couso, M. J. Martín
{"title":"A Monte Carlo Study of electron transport in suspended monolayer graphene","authors":"R. Rengel, C. Couso, M. J. Martín","doi":"10.1109/CDE.2013.6481371","DOIUrl":"https://doi.org/10.1109/CDE.2013.6481371","url":null,"abstract":"A microscopic study of electronic transport in suspended monolayer graphene is presented. The results have been obtained by means of an ensemble Monte Carlo simulator that takes into account the main physical properties of the graphene bandstructure and the most relevant scattering mechanisms for this type of material. The carrier velocity value is mainly set by the dominant influence of optical and acoustic intervalley phonons, particularly at high electric fields, where a negative differential conductance is observed. The average time between scatterings shows an asymptotic behavior with the applied electric field, with values in the order of tenths of ps. The influence of the electric field on the wavevector distribution is also analyzed, showing a saturation trend in the displacement of the charge centroid with a linear increase in the average energy. Finally, the instantaneous velocity and the correlation function of velocity fluctuations are also studied.","PeriodicalId":6614,"journal":{"name":"2013 Spanish Conference on Electron Devices","volume":"11 1","pages":"175-178"},"PeriodicalIF":0.0,"publicationDate":"2013-03-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90490020","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 12
Thin film YSZ solid state electrolyte characterization performed by electrochemical impedance spectroscopy 薄膜YSZ固态电解质的电化学阻抗谱表征
2013 Spanish Conference on Electron Devices Pub Date : 2013-03-21 DOI: 10.1109/CDE.2013.6481385
L. Rojo, G. G. Mandayo, E. Castafio
{"title":"Thin film YSZ solid state electrolyte characterization performed by electrochemical impedance spectroscopy","authors":"L. Rojo, G. G. Mandayo, E. Castafio","doi":"10.1109/CDE.2013.6481385","DOIUrl":"https://doi.org/10.1109/CDE.2013.6481385","url":null,"abstract":"The objective of this work is to characterize a YSZ solid electrolyte using the impedance spectroscopy (IS) technique. Using the IS, a comparison between two electrode geometries and two electrolyte thicknesses at different temperatures has been performed in order to analyze the obtained impedance patterns and finally determine the optimal fabrication process and the optimal measurement conditions.","PeriodicalId":6614,"journal":{"name":"2013 Spanish Conference on Electron Devices","volume":"33 1","pages":"233-236"},"PeriodicalIF":0.0,"publicationDate":"2013-03-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"80592269","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Modification of the properties of CdTe films grown by close space vapour sublimation for solar cell applications 近空间蒸汽升华法制备太阳能电池用碲化镉薄膜
2013 Spanish Conference on Electron Devices Pub Date : 2013-03-21 DOI: 10.1109/CDE.2013.6481418
J. Plaza, S. Rubio, E. Dieguez, O. Martínez, V. Hortelano
{"title":"Modification of the properties of CdTe films grown by close space vapour sublimation for solar cell applications","authors":"J. Plaza, S. Rubio, E. Dieguez, O. Martínez, V. Hortelano","doi":"10.1109/CDE.2013.6481418","DOIUrl":"https://doi.org/10.1109/CDE.2013.6481418","url":null,"abstract":"In this work we analyze the growth of CdTe films by close space sublimation as well as the modification of their properties by using low energy ion sputtering. The structure and composition of the films are studied as a function of different growth parameters. The properties of the CdTe films after ion beam irradiation are studied by using AFM and photo-luminescence techniques. Morphological changes have been observed as a result of the sputtering process; in particular, an increased roughness average has been noticed after irradiation.","PeriodicalId":6614,"journal":{"name":"2013 Spanish Conference on Electron Devices","volume":"69 1","pages":"365-368"},"PeriodicalIF":0.0,"publicationDate":"2013-03-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90386809","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Effects of coverage factor, inhomogeneous broadening and cavity length on static and dynamic behavior of self-assembled quantum-dot laser by using circuit-level modeling 利用电路级模型研究了覆盖系数、非均匀展宽和腔长对自组装量子点激光器静态和动态行为的影响
2013 Spanish Conference on Electron Devices Pub Date : 2013-03-21 DOI: 10.1109/CDE.2013.6481341
M. Razm-Pa, F. Emami
{"title":"Effects of coverage factor, inhomogeneous broadening and cavity length on static and dynamic behavior of self-assembled quantum-dot laser by using circuit-level modeling","authors":"M. Razm-Pa, F. Emami","doi":"10.1109/CDE.2013.6481341","DOIUrl":"https://doi.org/10.1109/CDE.2013.6481341","url":null,"abstract":"In this paper, a new circuit model for self-assembled quantum dot (SAQD) laser made by InGaAs/GaAs structures is presented based on the excited state and the standard rate equations. The model improves the previously offered circuit models and also provides and investigates the performance of this kind of laser. The effects of QDs coverage factor, inhomogeneous broadening, which its physical source is the size fluctuation of quantum dot in forming self assembled quantum dots, as well as cavity length, on SAQD laser have been analyzed. The results of simulation show that the increase of cavity length as well as the increase of QDs coverage causes the output power to increase. On the other hand, the coverage factor increase and the inhomogeneous broadening degradation lead to increase the modulation band width.","PeriodicalId":6614,"journal":{"name":"2013 Spanish Conference on Electron Devices","volume":"25 1","pages":"55-58"},"PeriodicalIF":0.0,"publicationDate":"2013-03-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"73873079","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
New improvements in the Infrared atmospheric sensor for the Mars MetNet Mission 火星气象网任务红外大气传感器的新改进
2013 Spanish Conference on Electron Devices Pub Date : 2013-03-21 DOI: 10.1109/CDE.2013.6481366
F. Cortés, A. González, A. Llopis, A. J. de Castro, J. Meléndez, F. López
{"title":"New improvements in the Infrared atmospheric sensor for the Mars MetNet Mission","authors":"F. Cortés, A. González, A. Llopis, A. J. de Castro, J. Meléndez, F. López","doi":"10.1109/CDE.2013.6481366","DOIUrl":"https://doi.org/10.1109/CDE.2013.6481366","url":null,"abstract":"There are two main agents that govern surface temperature and the heat transfer process in the Martian atmosphere: CO2 and suspended dust. Dust is a major agent of atmospheric motions at all scales and has great influence on the morphological evolution of the Martian surface and its climate. The flight model (FM) of the current Dust Sensor (DS) of the Mars MetNet Mission for measuring the particle size distribution, in charge of The Infrared Lab of Carlos III University (LIR-UC3M), has already been fabricated and successfully tested. The optimized sensor proposed in this work includes two subinstruments more to be added to the DS for measuring both CO2 concentration and ground temperature. Its main goal is to maintain it as a micro-sensor (mass <;100 g and mean power <;1W). All of these parameters will be measured in-situ, giving very valuable information about the Martian Planetary Boundary Layer (PBL). The optimized Sensor incorporates simultaneously angular and spectral resolution. The incorporation of new parameters such as CO2 concentration and ground temperature is possible thanks to the introduction of a new multispectral sensor with more single elements, properly tuned to the new spectral bands.","PeriodicalId":6614,"journal":{"name":"2013 Spanish Conference on Electron Devices","volume":"8 1","pages":"155-158"},"PeriodicalIF":0.0,"publicationDate":"2013-03-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81662134","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Effects of Ozone pre-deposition treatment on GaSb MOS capacitors 臭氧预沉积处理对GaSb MOS电容器的影响
2013 Spanish Conference on Electron Devices Pub Date : 2013-03-21 DOI: 10.1109/CDE.2013.6481332
Z. Tan, Lianfeng Zhao, Ning Cui, Jing Wang, Jun Xu
{"title":"Effects of Ozone pre-deposition treatment on GaSb MOS capacitors","authors":"Z. Tan, Lianfeng Zhao, Ning Cui, Jing Wang, Jun Xu","doi":"10.1109/CDE.2013.6481332","DOIUrl":"https://doi.org/10.1109/CDE.2013.6481332","url":null,"abstract":"GaSb metal-oxide-semiconductor capacitors (MOSCAPs) with Ozone pre-deposition treatment at various temperatures are studied. It is found that Ozone treatment can improve the characteristics of High-k/GaSb MOSCAPs. The Interface Trap Density (Dit) is reduced by 50% after Ozone pre-deposition treatment at 200°C, and gate leakage current is reduced by around 70% after Ozone treatment at 100°C.","PeriodicalId":6614,"journal":{"name":"2013 Spanish Conference on Electron Devices","volume":"44 1","pages":"21-24"},"PeriodicalIF":0.0,"publicationDate":"2013-03-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"77798771","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
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