Thin dielectric films grown by atomic layer deposition: Properties and applications

F. Campabadal, J. M. Rafí, M. B. González, M. Zabala, O. Beldarrain, M. Acero, M. Duch
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Abstract

Atomic layer deposition of high-k dielectrics is currently identified to be an enabling technology for a variety of applications. An overview of the characteristics of the technique is presented and its limiting factors and opportunities discussed. Particular attention is paid to Al2O3 and HfO2 films deposited on silicon in terms of material and electrical characteristics for their use in MEMS and radiation detectors technologies and the effects of post-deposition annealing processing are discussed.
原子层沉积法生长的介质薄膜:性能和应用
高k介电体的原子层沉积目前被认为是一种多种应用的使能技术。概述了该技术的特点,并讨论了其限制因素和机会。在材料和电学特性方面,特别关注了Al2O3和HfO2薄膜沉积在硅上,用于MEMS和辐射探测器技术,并讨论了沉积后退火处理的影响。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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