Modeling of the post-breakdown IG-VG-VD characteristics of La2O3-based MOS transistors

Abstract

A simple analytic model for the post-breakdown conduction characteristics in W/La₂O₃/p-type Si MOSFETs is reported. The model is based on the solution of the generalized diode equation and captures the behavior of the gate current (I_G) as a function of the gate (V_G) and drain (V_D) voltages including both positive and negative biases. The devices were subjected to ramped voltage stress so as to induce the dielectric breakdown close to or at the transistor drain region.