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2018 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP)最新文献

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Comparison between different MEMS Laterally Vibrating Resonator Technologies for Passive Voltage Amplification in an RF Front-End System 用于射频前端系统无源电压放大的不同MEMS横向振动谐振器技术的比较
2018 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP) Pub Date : 2018-07-01 DOI: 10.1109/IMWS-AMP.2018.8457149
L. Colombo, Abhay S. Kochhar, G. Vidal-Álvarez, Zachary Schaffer, Pietro Simeoni, G. Piazza
{"title":"Comparison between different MEMS Laterally Vibrating Resonator Technologies for Passive Voltage Amplification in an RF Front-End System","authors":"L. Colombo, Abhay S. Kochhar, G. Vidal-Álvarez, Zachary Schaffer, Pietro Simeoni, G. Piazza","doi":"10.1109/IMWS-AMP.2018.8457149","DOIUrl":"https://doi.org/10.1109/IMWS-AMP.2018.8457149","url":null,"abstract":"This paper describes the challenges associated with attainingpassive voltage gain by means of piezoelectric MEMS Laterally VibratingResonators (LVRs) in an RF frontend (RFFE) system. LVR technologies based ondifferent piezoelectric films – Aluminum Nitride (AlN), Scandium-dopedAluminum Nitride (Scx Al1–xN), and Y-cut and X-cut Lithium Niobate(LN) – are compared in regards to their impact on the sensitivity of anultra-low power wake-up resonant micromechanical receiver (RMR) [1]. Due tothe outstanding performance in terms of quality factor at resonance $(Q_{s})$ and electromechanical coupling $(k_{t}^{2})$, X-cut LithiumNiobate resonators are identified as the optimal approach for this radioarchitecture. Design, fabrication, and testing of an array of X-cut LNresonators is finally presented to demonstrate the capabilities of thistechnology.","PeriodicalId":6605,"journal":{"name":"2018 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP)","volume":"30 1","pages":"1-3"},"PeriodicalIF":0.0,"publicationDate":"2018-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"80649351","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
On the Linearity of BST Thin Film Bulk Acoustic Resonators BST薄膜体声谐振器的线性特性研究
2018 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP) Pub Date : 2018-07-01 DOI: 10.1109/IMWS-AMP.2018.8457167
M. Koohi, A. Mortazawi
{"title":"On the Linearity of BST Thin Film Bulk Acoustic Resonators","authors":"M. Koohi, A. Mortazawi","doi":"10.1109/IMWS-AMP.2018.8457167","DOIUrl":"https://doi.org/10.1109/IMWS-AMP.2018.8457167","url":null,"abstract":"Preliminary measurement results on the linearity of intrinsically switchable BST thin film bulk acoustic resonators (FBARs) are presented. Ferroelectric BST possesses electricfield-piezoelectricity, or electrostriction, which is employed to design intrinsically switchable BST FBARs. The linearity of these switchable resonators is an important factor for designing intrinsically switchable filters. The linearity of a single resonator is compared with two cascaded doubled size BST resonators. Third-order intercept point (IP3) measurement is performed, demonstrating the input IP3 improvement from 39 dBm to 43 dBm.","PeriodicalId":6605,"journal":{"name":"2018 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP)","volume":"20 1","pages":"1-3"},"PeriodicalIF":0.0,"publicationDate":"2018-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83353755","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
RF MEMS Based 60 GHz Variable Attenuator 基于射频MEMS的60ghz可变衰减器
2018 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP) Pub Date : 2018-07-01 DOI: 10.1109/IMWS-AMP.2018.8457154
Navjot K. Khaira, Tejinder Singh, R. Mansour
{"title":"RF MEMS Based 60 GHz Variable Attenuator","authors":"Navjot K. Khaira, Tejinder Singh, R. Mansour","doi":"10.1109/IMWS-AMP.2018.8457154","DOIUrl":"https://doi.org/10.1109/IMWS-AMP.2018.8457154","url":null,"abstract":"This paper presents a millimeter-wave variableattenuator realized using a lateral radio-frequency (RF) microelectromechanical systems (MEMS) capacitive type switch. The proposed variable attenuator comprises of two CPW based quadrature hybrid couplers paired with capacitive type thermally-actuated lateral MEMS switches. The voltage applied to the Chevron actuator regulates the precise mechanical movement of the contact plate and hence defines the range of attenuation. At the center frequency of 60 GHz, the attenuation monotonically varied from 4 dB to 20 dB with the applied voltage. Return loss better than 20 dB over a bandwidth of 4 GHz is achieved. The proposed fabrication process provides the ability to integrate the lateral actuators, movable plates, RF CPW lines, and the CPW hybrid coupler and other supporting structures on an SOI substrate.","PeriodicalId":6605,"journal":{"name":"2018 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP)","volume":"246 1","pages":"1-3"},"PeriodicalIF":0.0,"publicationDate":"2018-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"91003358","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 8
Cavity Resonator Filters in Shielded Quarter-Mode Substrate Integrated Waveguide Technology 屏蔽四分之一模衬底集成波导技术中的腔谐振器滤波器
2018 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP) Pub Date : 2018-07-01 DOI: 10.1109/IMWS-AMP.2018.8457166
N. Delmonte, M. Bozzi, L. Perregrini, C. Tomassoni
{"title":"Cavity Resonator Filters in Shielded Quarter-Mode Substrate Integrated Waveguide Technology","authors":"N. Delmonte, M. Bozzi, L. Perregrini, C. Tomassoni","doi":"10.1109/IMWS-AMP.2018.8457166","DOIUrl":"https://doi.org/10.1109/IMWS-AMP.2018.8457166","url":null,"abstract":"The substrate integrated waveguide (SIW) technology has high performance but is relatively bulky compared to other planar technologies. Compact topologies like the quarter-mode technology aim to reduce the size of SIW components, but suffer from additional losses. A modified version of the quarter-mode resonator topology, called shielded quarter-mode, improves the performance of microwave filters with a small increase of the component area. This paper presents three different microwave filters operating at 4 GHz as an example of application for the shielded quarter-mode topology.","PeriodicalId":6605,"journal":{"name":"2018 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP)","volume":"12 1","pages":"1-3"},"PeriodicalIF":0.0,"publicationDate":"2018-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"79548045","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
Transparent Ultrathin Doped Silver Film for Broadband Electromagnetic Interference Shielding 宽带电磁干扰屏蔽用透明超薄掺杂银膜
2018 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP) Pub Date : 2018-07-01 DOI: 10.1109/IMWS-AMP.2018.8457129
Heyan Wang, Chengang Ji, Cheng Zhang, Yilei Zhang, Zhong Zhang, Zhengang Lu, Jiubin Tan, L. Guo
{"title":"Transparent Ultrathin Doped Silver Film for Broadband Electromagnetic Interference Shielding","authors":"Heyan Wang, Chengang Ji, Cheng Zhang, Yilei Zhang, Zhong Zhang, Zhengang Lu, Jiubin Tan, L. Guo","doi":"10.1109/IMWS-AMP.2018.8457129","DOIUrl":"https://doi.org/10.1109/IMWS-AMP.2018.8457129","url":null,"abstract":"A high-performance electromagnetic interference (EMI) shielding film based on a dielectric-metal-dielectric structure incorporating ultrathin Silver is proposed. The ITO/Cu-doped Ag/ITO (ICAI) film was deposited on flexible Polyethylene terephthalate (PET) substrates at room temperature. The ICAI film transmits $sim 96.5$% visible light (reference to PET substrate) over spectral range 400 – 700 nm. The film stack shows an excellent average EMI shielding effectiveness (SE) of $sim 26$ dB, exhibiting a broadband shielding with the bandwidth of 32 GHz, which covers the entire X, Ku, Ka, and K bands. The dielectric-metal-dielectric design greatly relieves the trade-off between optical transmittance and EMI shielding performances. EMI SE exceeds 30 dB can be simply obtained by stacking two layers of ICAI films together. In addition, the flexible ICAI film demonstrates a stable EMI shielding performance under mechanical deformation. The outstanding optical, broadband EMI shielding and mechanical properties of ICAI film render it promising for various applications in healthcare, electronic safety, and fast-growing next-generation flexible electronics, such as roll-up displays and wearable devices.","PeriodicalId":6605,"journal":{"name":"2018 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP)","volume":"31 1","pages":"1-3"},"PeriodicalIF":0.0,"publicationDate":"2018-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"89148990","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
3D-Printed Microfluidic Sensor in Substrate Integrated Waveguide Technology 基板集成波导技术中的3d打印微流控传感器
2018 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP) Pub Date : 2018-07-01 DOI: 10.1109/IMWS-AMP.2018.8457168
Giulia Maria Rocco, M. Bozzi, S. Marconi, G. Alaimo, F. Auricchio, D. Schreurs
{"title":"3D-Printed Microfluidic Sensor in Substrate Integrated Waveguide Technology","authors":"Giulia Maria Rocco, M. Bozzi, S. Marconi, G. Alaimo, F. Auricchio, D. Schreurs","doi":"10.1109/IMWS-AMP.2018.8457168","DOIUrl":"https://doi.org/10.1109/IMWS-AMP.2018.8457168","url":null,"abstract":"This paper presents a microwave microfluidic sensor based on a substrate integrated waveguide (SIW) cavity, fabricated using 3D printing technology. 3D-printing is a very attractive manufacturing technology, which allows reduction in manufacturing time, costs and complexity. The proposed sensor consists of a meandered micro-pipe inside an SIW cavity, where the sample fluid can be easily injected. The electrical properties of the sample fluid are determined from the shift of the cavity’s resonant frequency and quality factor. The design of the 3D-printed microfluidic sensor is described, along with the experimental validation of a prototype by the characterization of several fluids.","PeriodicalId":6605,"journal":{"name":"2018 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP)","volume":"2018 1","pages":"1-3"},"PeriodicalIF":0.0,"publicationDate":"2018-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"87788883","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Very Wide-Band and Compact VO2 Based Switches 非常宽带和紧凑的基于VO2的交换机
2018 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP) Pub Date : 2018-07-01 DOI: 10.1109/IMWS-AMP.2018.8457164
A. Hariri, A. Crunteanu, C. Guines, C. Halleppe, D. Passerieux, P. Blondy
{"title":"Very Wide-Band and Compact VO2 Based Switches","authors":"A. Hariri, A. Crunteanu, C. Guines, C. Halleppe, D. Passerieux, P. Blondy","doi":"10.1109/IMWS-AMP.2018.8457164","DOIUrl":"https://doi.org/10.1109/IMWS-AMP.2018.8457164","url":null,"abstract":"This paper presents the design, fabrication and high frequency characterization of two terminals RF switches based on Vanadium dioxide (VO2) material. This material presents a thermally induced metal-insulator transition showing a resistivity variation up to five orders of magnitude as the material change between the insulator state and the metallic state. We present the design of 2-terminal RF switch and the integration of this structure into series-shunt switch structure to increase the isolation on the OFF state. The proposed device has less than 2 dB loss and more than 30 dB isolation up to 70 GHz.","PeriodicalId":6605,"journal":{"name":"2018 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP)","volume":"1 1","pages":"1-3"},"PeriodicalIF":0.0,"publicationDate":"2018-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78210145","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Ku Band High-Q Tunable Cavity Filters using MEMS and Vanadium Dioxide (VO2) Tuners 使用MEMS和二氧化钒(VO2)调谐器的Ku波段高q可调谐腔滤波器
2018 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP) Pub Date : 2018-07-01 DOI: 10.1109/IMWS-AMP.2018.8457138
M. Agaty, A. Crunteanu, C. Dalmay, P. Blondy
{"title":"Ku Band High-Q Tunable Cavity Filters using MEMS and Vanadium Dioxide (VO2) Tuners","authors":"M. Agaty, A. Crunteanu, C. Dalmay, P. Blondy","doi":"10.1109/IMWS-AMP.2018.8457138","DOIUrl":"https://doi.org/10.1109/IMWS-AMP.2018.8457138","url":null,"abstract":"This paper reports the design and EM-simulations of Ku-band High-Q tunable and switchable cavity resonators and 2-pole cavity filters using, microelectromechanical system (MEMS) fixed fixed beams and, Vanadium Dioxide (VO2) Phase Change Material (PCM) tuners. The devices are copper surfacemounted cavities bonded on low permittivity substrates, on which are processed RF-MEMS and VO2 tuners. The tuners are located opposite to capacitive posts in the middle of each cavity, where the E-field of the resonant mode is maximum in order to obtain a wide tuning range. By using either the actuation of the fixed fixed beams, or the reversible Metal-to-Insulator Transition (MIT) of VO2, the resonators and filters resonant frequencies are shifted by achieving a variation of the parasitic capacitance created between the posts top and the tuners. Electromagnetic simulations have been conducted and exhibit at least 1 GHz of frequency shift and high unloaded quality factors (Qu).","PeriodicalId":6605,"journal":{"name":"2018 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP)","volume":"11 1","pages":"1-3"},"PeriodicalIF":0.0,"publicationDate":"2018-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84175586","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Nonlinear Equivalent-Circuit Model for Thin-Film Magnetic Material Based RF Devices 基于薄膜磁性材料的射频器件非线性等效电路模型
2018 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP) Pub Date : 2018-07-01 DOI: 10.1109/IMWS-AMP.2018.8457165
H. Cui, Z. Yao, Cheng Tao, Y. Wang
{"title":"Nonlinear Equivalent-Circuit Model for Thin-Film Magnetic Material Based RF Devices","authors":"H. Cui, Z. Yao, Cheng Tao, Y. Wang","doi":"10.1109/IMWS-AMP.2018.8457165","DOIUrl":"https://doi.org/10.1109/IMWS-AMP.2018.8457165","url":null,"abstract":"A nonlinear equivalent-circuit model is developed for thin-film magnetic material based RF devices such as frequency-selective Iimiter (FSL) and signal-to-noise enhancer (SNE). The ferromagnetic resonance is modeled by a RLC parallel circuit with parameters derived from Kittel's equations. The nonlinear effect in magnetic material is represented by a pendulum model that predicts cross-frequency coupling as well as parametric oscillations of spins. The coupling of spin waves in different orders is also modeled by coupled nonlinear pendulum resonators with the exchange coupling between the spins represented by coupling inductors. The measurement results of a FSL in literature are used as a reference, and the model successfully predicts the threshold power level, non-linear insertion loss, and frequency selectivity of the device.","PeriodicalId":6605,"journal":{"name":"2018 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP)","volume":"975 1","pages":"1-3"},"PeriodicalIF":0.0,"publicationDate":"2018-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"77101579","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Silicon and Silicon Germanium Terahertz Electronics 硅和硅锗太赫兹电子
2018 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP) Pub Date : 2018-07-01 DOI: 10.1109/IMWS-AMP.2018.8457131
M. Shur
{"title":"Silicon and Silicon Germanium Terahertz Electronics","authors":"M. Shur","doi":"10.1109/IMWS-AMP.2018.8457131","DOIUrl":"https://doi.org/10.1109/IMWS-AMP.2018.8457131","url":null,"abstract":"Silicon and silicon germanium transistors with feature sizes below 100 nm have demonstrated operation in sub-terahertz and terahertz frequency ranges with potential applications in communications, Beyond 5 G WI FI, sensing, and imaging. New features of ballistic electron transport in deep submicron devices must be accounted for design, modeling, and characterization of Si and SiGe transistors operating at sub-THz and THz frequencies. The key issue is the crucial role that the electron inertia and electron viscosity play at ultra-short sizes determining the frequency and decay of the plasma waves - the electron density oscillations in the transistor channel electronic (or hole) fluid. This paper will present a review of the state-of-the art of the Si and SiGe THz electronics and will focus on Si plasmonic devices emerging as key competitors for THz and sub-THz applications.","PeriodicalId":6605,"journal":{"name":"2018 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP)","volume":"27 1","pages":"1-3"},"PeriodicalIF":0.0,"publicationDate":"2018-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83542924","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
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