Very Wide-Band and Compact VO2 Based Switches

Abstract

This paper presents the design, fabrication and high frequency characterization of two terminals RF switches based on Vanadium dioxide (VO2) material. This material presents a thermally induced metal-insulator transition showing a resistivity variation up to five orders of magnitude as the material change between the insulator state and the metallic state. We present the design of 2-terminal RF switch and the integration of this structure into series-shunt switch structure to increase the isolation on the OFF state. The proposed device has less than 2 dB loss and more than 30 dB isolation up to 70 GHz.