2018 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP)最新文献

Polymer-based 3D Printed Millimeter-wave Components for Spacecraft Payloads 基于聚合物的航天器有效载荷3D打印毫米波组件

2018 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP) Pub Date : 2018-07-16 DOI: 10.1109/IMWS-AMP.2018.8457142

S. Lucyszyn, X. Shang, W. J. Otter, C. Myant, Ran Cheng, N. Ridler

引用次数: 16

3D Printing of Ka band Orthomode Transducers Ka波段正交换能器的3D打印

2018 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP) Pub Date : 2018-07-16 DOI: 10.1109/IMWS-AMP.2018.8457143

G. Addamo, O. Peverini, G. Virone, F. Paonessa, D. Manfredi, F. Calignano

引用次数: 9

Sub-Micron Gallium Oxide Radio Frequency Field-Effect Transistors 亚微米氧化镓射频场效应晶体管

2018 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP) Pub Date : 2018-07-01 DOI: 10.1109/IMWS-AMP.2018.8457153

K. Chabak, D. Walker, A. Green, A. Crespo, M. Lindquist, K. Leedy, S. Tetlak, R. Gilbert, N. Moser, G. Jessen

引用次数: 29

Broadband and Accurate Material Characterization of 3D Manufactured RF Structures 三维制造射频结构的宽带和精确材料表征

2018 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP) Pub Date : 2018-07-01 DOI: 10.1109/IMWS-AMP.2018.8457147

K. Alhassoon, Y. Malallah, A. Sarnaik, C. Kolwalkar, D. N. Kumar, A. Daryoush

{"title":"Broadband and Accurate Material Characterization of 3D Manufactured RF Structures","authors":"K. Alhassoon, Y. Malallah, A. Sarnaik, C. Kolwalkar, D. N. Kumar, A. Daryoush","doi":"10.1109/IMWS-AMP.2018.8457147","DOIUrl":"https://doi.org/10.1109/IMWS-AMP.2018.8457147","url":null,"abstract":"3D additive printing have been employed recently for manufacturing a wide variety of Radio Frequency (RF) components on planar and conformal structures. The design and modeling step requires an accurate electromagnetic (EM) characterization of the 3D printed dielectric material at RF frequencies. The broadband and accurate material extraction techniques are based on best fitting of simulated to measured scattering (S) parameters. The simulation is based on Finite Element Method (FEM) solver for full-wave electromagnetic fields and the measurement was obtained through network analyzer for microstrip transmission lines (TL) and annular ring (AR) resonators. An initial broadband characterization utilizing a transmission line of three different lengths are initially modeled and fabricated on unknown 3D printed substrate and compared to known RT/Duroid substrate for error analysis. A higher accuracy narrowband characterization is achieved with best fitting process of enclosed annular ring resonators realized at 2.4 and 5.4GHz.","PeriodicalId":6605,"journal":{"name":"2018 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP)","volume":"15 1","pages":"1-3"},"PeriodicalIF":0.0,"publicationDate":"2018-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81918306","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 3

Ferrite-Based Reflective-Type Frequency Selective Limiters 基于铁氧体的反射型频率选择限制器

2018 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP) Pub Date : 2018-07-01 DOI: 10.1109/IMWS-AMP.2018.8457134

Scott M. Gillette, Michael Geiler, J. Adam, A. Geiler

引用次数: 10

Low-Temperature Micropatterning of Thick-Film BaFe12O19 Composites on Semiconductor Substrates for Integrated Millimeter Wave Devices 集成毫米波器件中厚膜BaFe12O19复合材料在半导体衬底上的低温微图像化

2018 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP) Pub Date : 2018-07-01 DOI: 10.1109/IMWS-AMP.2018.8457152

C. Vélez, J. Ewing, Seahee Hwangbo, K. Sondhi, T. Schumann, Y. Yoon, D. Arnold

引用次数: 3

IMWS-AMP 2018 Program IMWS-AMP 2018计划

2018 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP) Pub Date : 2018-07-01 DOI: 10.1109/imws-amp.2018.8457135

引用次数: 0

Investigation of a Solid-State Tuning Behavior in Lithium Niobate 铌酸锂固态调谐行为的研究

2018 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP) Pub Date : 2018-07-01 DOI: 10.1109/IMWS-AMP.2018.8457130

D. Branch, C. Nordquist, M. Eichenfield, J. K. Douglas, A. Siddiqui, T. Friedmann

引用次数: 4

Ultra-wide band gap materials for high frequency applications 用于高频应用的超宽带隙材料

2018 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP) Pub Date : 2018-07-01 DOI: 10.1109/IMWS-AMP.2018.8457144

T. Razzak, H. Xue, Zhanbo Xia, Seongmo Hwang, Asif Khan, W. Lu, S. Rajan

{"title":"Ultra-wide band gap materials for high frequency applications","authors":"T. Razzak, H. Xue, Zhanbo Xia, Seongmo Hwang, Asif Khan, W. Lu, S. Rajan","doi":"10.1109/IMWS-AMP.2018.8457144","DOIUrl":"https://doi.org/10.1109/IMWS-AMP.2018.8457144","url":null,"abstract":"Gallium Nitride electronics based on the AlGaN/GaN high electron mobility transistor structure is approaching intrinsic limits. Future mm-wave and THz technology requires highly efficient and linear amplifiers that can deliver high power density. This presentation will outline the potential and recent work of next-generation wide band gap transistors based on ultra-wide band gap semiconductors for high frequency applications. Detailed DC and high frequency 2-dimensional modeling of ultra-wide band gap semiconductor devices show that the predicted power density, gain, and efficiency of these devices have the potential to be better than cutting-edge GaN-based devices at mm-wave and THz frequencies. We will discuss the principal challenges for realization of these devices and outline the design and demonstration of advanced high Al-composition AlGaN based transistors, where researchers have used novel epitaxial designs to enable efficient injection and extraction of carriers. This has enabled the state-of-the-art current density and breakdown characteristics of AlGaN-channel devices to increase significantly in recent years.","PeriodicalId":6605,"journal":{"name":"2018 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP)","volume":"38 1","pages":"1-3"},"PeriodicalIF":0.0,"publicationDate":"2018-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90588668","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 5

Additive Manufacturing of a Very Compact Doublet Structure with Asymmetric Filtering Function 具有非对称滤波功能的极紧双重结构的增材制造

2018 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP) Pub Date : 2018-07-01 DOI: 10.1109/IMWS-AMP.2018.8457127

C. Tomassoni, G. Venanzoni, M. Dionigi, R. Sorrentino

引用次数: 7