集成毫米波器件中厚膜BaFe12O19复合材料在半导体衬底上的低温微图像化

C. Vélez, J. Ewing, Seahee Hwangbo, K. Sondhi, T. Schumann, Y. Yoon, D. Arnold
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引用次数: 3

摘要

本文报道了用于集成毫米波(mm-wave)器件的平面基板上厚的自偏置六铁氧体磁性结构的制备和表征。采用所有低温工艺,将BaFe12O19微/纳米颗粒(来自三个不同供应商)和聚合物粘合剂(PDMS)丝网印刷到可移动模具中,形成直径600 μm,厚度144 μm的测试结构。对晶体学、形貌和直流磁滞曲线进行了评价。提出了在薄膜中施加磁各向异性的方法。使用共面波导测试结构直接测量射频特性,显示铁磁共振(FMR)频率为45.9 GHz,通过外部磁场可调谐。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Low-Temperature Micropatterning of Thick-Film BaFe12O19 Composites on Semiconductor Substrates for Integrated Millimeter Wave Devices
This paper reports the fabrication and characterization of thick, self-biased hexaferrite magnetic structures patterned on planar substrates for integrated millimeter-wave (mm-wave) device applications. Using all lowtemperature processes, BaFe12O19 micro/nanoparticles (from three different vendors) and polymeric binder (PDMS) are screenprinted into removable molds to form 600-μm-diameter, 144-μm-thick test structures. The crystallography, morphology, and DC magnetic hysteresis curves are evaluated. Methods are shown for imposing magnetic anisotropy in the films. A direct measurement of the RF properties using a coplanar waveguide test structure is performed, showing a ferromagnetic resonance (FMR) frequency of 45.9 GHz with tunability via an external magnetic field.
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