Comparison between different MEMS Laterally Vibrating Resonator Technologies for Passive Voltage Amplification in an RF Front-End System

2018 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP) Pub Date : 2018-07-01 DOI:10.1109/IMWS-AMP.2018.8457149

L. Colombo, Abhay S. Kochhar, G. Vidal-Álvarez, Zachary Schaffer, Pietro Simeoni, G. Piazza

{"title":"Comparison between different MEMS Laterally Vibrating Resonator Technologies for Passive Voltage Amplification in an RF Front-End System","authors":"L. Colombo, Abhay S. Kochhar, G. Vidal-Álvarez, Zachary Schaffer, Pietro Simeoni, G. Piazza","doi":"10.1109/IMWS-AMP.2018.8457149","DOIUrl":null,"url":null,"abstract":"This paper describes the challenges associated with attainingpassive voltage gain by means of piezoelectric MEMS Laterally VibratingResonators (LVRs) in an RF frontend (RFFE) system. LVR technologies based ondifferent piezoelectric films – Aluminum Nitride (AlN), Scandium-dopedAluminum Nitride (Scx Al1–xN), and Y-cut and X-cut Lithium Niobate(LN) – are compared in regards to their impact on the sensitivity of anultra-low power wake-up resonant micromechanical receiver (RMR) [1]. Due tothe outstanding performance in terms of quality factor at resonance $(Q_{s})$ and electromechanical coupling $(k_{t}^{2})$, X-cut LithiumNiobate resonators are identified as the optimal approach for this radioarchitecture. Design, fabrication, and testing of an array of X-cut LNresonators is finally presented to demonstrate the capabilities of thistechnology.","PeriodicalId":6605,"journal":{"name":"2018 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP)","volume":"30 1","pages":"1-3"},"PeriodicalIF":0.0000,"publicationDate":"2018-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IMWS-AMP.2018.8457149","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 3

Abstract

This paper describes the challenges associated with attainingpassive voltage gain by means of piezoelectric MEMS Laterally VibratingResonators (LVRs) in an RF frontend (RFFE) system. LVR technologies based ondifferent piezoelectric films – Aluminum Nitride (AlN), Scandium-dopedAluminum Nitride (Scx Al1–xN), and Y-cut and X-cut Lithium Niobate(LN) – are compared in regards to their impact on the sensitivity of anultra-low power wake-up resonant micromechanical receiver (RMR) [1]. Due tothe outstanding performance in terms of quality factor at resonance $(Q_{s})$ and electromechanical coupling $(k_{t}^{2})$, X-cut LithiumNiobate resonators are identified as the optimal approach for this radioarchitecture. Design, fabrication, and testing of an array of X-cut LNresonators is finally presented to demonstrate the capabilities of thistechnology.

查看原文本刊更多论文

用于射频前端系统无源电压放大的不同MEMS横向振动谐振器技术的比较

本文描述了利用压电MEMS横向振动谐振器(lvr)在射频前端(RFFE)系统中实现无源电压增益所面临的挑战。本文比较了基于不同压电薄膜的LVR技术——氮化铝(AlN)、掺杂钪的氮化铝(Scx Al1-xN)、y切割和x切割的铌酸锂(LN)——对超低功耗唤醒谐振微机械接收器(RMR)[1]灵敏度的影响。由于在共振$(Q_{s})$和机电耦合$(k_{t}^{2})$的质量因子方面的出色性能，x切割铌酸锂谐振器被确定为该放射结构的最佳方法。设计，制造和测试阵列的x切割非谐振器最后提出，以证明该技术的能力。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

求助全文

约1分钟内获得全文求助全文

来源期刊

2018 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP)

自引率

0.00%

发文量