非常宽带和紧凑的基于VO2的交换机

2018 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP) Pub Date : 2018-07-01 DOI:10.1109/IMWS-AMP.2018.8457164

A. Hariri, A. Crunteanu, C. Guines, C. Halleppe, D. Passerieux, P. Blondy

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引用次数: 1

摘要

本文介绍了基于二氧化钒(VO2)材料的两端射频开关的设计、制造和高频特性。这种材料呈现出热诱导的金属-绝缘体转变，当材料在绝缘体状态和金属状态之间变化时，其电阻率变化可达五个数量级。提出了一种双端射频开关的设计，并将该结构集成到串联并联开关结构中，以提高开关的OFF隔离度。该器件损耗小于2 dB，隔离度大于30 dB，最高可达70 GHz。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Very Wide-Band and Compact VO2 Based Switches

This paper presents the design, fabrication and high frequency characterization of two terminals RF switches based on Vanadium dioxide (VO2) material. This material presents a thermally induced metal-insulator transition showing a resistivity variation up to five orders of magnitude as the material change between the insulator state and the metallic state. We present the design of 2-terminal RF switch and the integration of this structure into series-shunt switch structure to increase the isolation on the OFF state. The proposed device has less than 2 dB loss and more than 30 dB isolation up to 70 GHz.

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来源期刊

2018 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP)

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