使用MEMS和二氧化钒(VO2)调谐器的Ku波段高q可调谐腔滤波器

M. Agaty, A. Crunteanu, C. Dalmay, P. Blondy
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引用次数: 2

摘要

本文报道了采用微机电系统(MEMS)固定光束和二氧化钒(VO2)相变材料(PCM)调谐器的ku波段高q可调谐和可切换腔谐振器和2极腔滤波器的设计和电磁仿真。该器件是铜表面贴装腔,结合在低介电常数衬底上,在其上加工RF-MEMS和VO2调谐器。调谐器位于每个腔中央电容柱的对面,谐振模式的e场最大,以获得较宽的调谐范围。通过使用固定固定光束的驱动,或VO2的可逆金属到绝缘体过渡(MIT),谐振器和滤波器的谐振频率通过实现在柱顶和调谐器之间产生的寄生电容的变化而移位。进行了电磁模拟,显示出至少1ghz的频移和高卸载质量因子(Qu)。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Ku Band High-Q Tunable Cavity Filters using MEMS and Vanadium Dioxide (VO2) Tuners
This paper reports the design and EM-simulations of Ku-band High-Q tunable and switchable cavity resonators and 2-pole cavity filters using, microelectromechanical system (MEMS) fixed fixed beams and, Vanadium Dioxide (VO2) Phase Change Material (PCM) tuners. The devices are copper surfacemounted cavities bonded on low permittivity substrates, on which are processed RF-MEMS and VO2 tuners. The tuners are located opposite to capacitive posts in the middle of each cavity, where the E-field of the resonant mode is maximum in order to obtain a wide tuning range. By using either the actuation of the fixed fixed beams, or the reversible Metal-to-Insulator Transition (MIT) of VO2, the resonators and filters resonant frequencies are shifted by achieving a variation of the parasitic capacitance created between the posts top and the tuners. Electromagnetic simulations have been conducted and exhibit at least 1 GHz of frequency shift and high unloaded quality factors (Qu).
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