2015 2nd International Symposium on Physics and Technology of Sensors (ISPTS)最新文献_第3页

Effect of post deposition annealing temperature of e-beam evaporated Ta2O5 films on sensitivities of electrolyte-insulator-semiconductor devices 电子束蒸发Ta2O5薄膜沉积后退火温度对电解-绝缘体-半导体器件灵敏度的影响

2015 2nd International Symposium on Physics and Technology of Sensors (ISPTS) Pub Date : 2015-03-07 DOI: 10.1109/ISPTS.2015.7220115

Narendra Kumar, Abhay Tiwari, J. Kumar, S. Panda

{"title":"Effect of post deposition annealing temperature of e-beam evaporated Ta2O5 films on sensitivities of electrolyte-insulator-semiconductor devices","authors":"Narendra Kumar, Abhay Tiwari, J. Kumar, S. Panda","doi":"10.1109/ISPTS.2015.7220115","DOIUrl":"https://doi.org/10.1109/ISPTS.2015.7220115","url":null,"abstract":"In this work, the annealing effects of e-beam deposited Ta2O5 films on the pH sensitivities of EIS based sensors are presented. XPS studies confirmed that the films annealed above 700 °C showed the best stoichiometry (Ta1.96O5.04) compared to the as deposited film and the films annealed till 600 °C. XRD spectra confirmed the amorphous nature of the as deposited film, which remained amorphous till 600 °C and became polycrystalline above 700 °C. The EIS device showed the maximum sensitivity of 51.4mV/pH for the film annealed at 700 °C, while the device with the as deposited film had a sensitivity of 44.3mV/pH. Further increase in annealing temperature above 700 °C resulted in reduced sensitivity (31.0mV/pH) because of increased interface states (indicated by C-V hysteresis in a MOS device) and enhanced cracks formation in the films (indicated by FESEM). Therefore, the annealing temperature of 700 °C was found to be the optimum annealing temperature for the e-beam deposited Ta2O5 films.","PeriodicalId":6520,"journal":{"name":"2015 2nd International Symposium on Physics and Technology of Sensors (ISPTS)","volume":"67 1","pages":"214-218"},"PeriodicalIF":0.0,"publicationDate":"2015-03-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"86852392","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 4

Fabrication and characterization of in-house developed resistor paste as buried micro heaters in LTCC for sensor applications 内部开发的电阻膏体在LTCC中作为传感器应用的埋式微加热器的制造和表征

2015 2nd International Symposium on Physics and Technology of Sensors (ISPTS) Pub Date : 2015-03-07 DOI: 10.1109/ISPTS.2015.7220118

Minnath Kolpe, V. Giramkar, Varsha Chaware, S. Joseph, G. Phatak

引用次数: 0

Low temperature synthesis of Ni and Co substituted alloys of Pd and their hydrogen sensing characteristics Ni和Co取代Pd合金的低温合成及其感氢特性

2015 2nd International Symposium on Physics and Technology of Sensors (ISPTS) Pub Date : 2015-03-07 DOI: 10.1109/ISPTS.2015.7220088

E. Prabhu, A. S. R. Murthy, I. Lakshmigandhan, Akash Singh, S. Murugesan, G. Panneerselvam, K. I. Gnanasekar, V. Jayaraman, T. Gnanasekaran

引用次数: 0

Nano-structured ZnO/ITO based SO2 detector in room temperature operation 室温下纳米结构ZnO/ITO SO2探测器

2015 2nd International Symposium on Physics and Technology of Sensors (ISPTS) Pub Date : 2015-03-07 DOI: 10.1109/ISPTS.2015.7220080

U. B. Memon, A. Ibrahim, S. Duttagupta, S. Roy

引用次数: 0

CNT- lead free solder composite electrodeposition for obtaining high speed interconnect for memsapplication CNT-无铅焊料复合电沉积获得mems应用的高速互连

2015 2nd International Symposium on Physics and Technology of Sensors (ISPTS) Pub Date : 2015-03-07 DOI: 10.1109/ISPTS.2015.7220095

J. R. Gadde, V. Giramkar, S. Joseph, G. Phatak

{"title":"CNT- lead free solder composite electrodeposition for obtaining high speed interconnect for memsapplication","authors":"J. R. Gadde, V. Giramkar, S. Joseph, G. Phatak","doi":"10.1109/ISPTS.2015.7220095","DOIUrl":"https://doi.org/10.1109/ISPTS.2015.7220095","url":null,"abstract":"Today's high functionality electronic circuits require faster interconnection speed, better thermal conductivity and the good mechanical properties for reliability. These requirements calls for enhanced properties of the present solder materials. Appropriate reinforcements in the existing solder material will help in achieving much improved electrical, mechanical and thermal properties. Carbon Nano Tubes (CNTs) are one such material that can bring in considerable improvements in the properties of the solder material. CNT-Solder composite with less than 1% CNT is being explored for solder bumps in flip chip applications. This paper reports our work on co-deposition of CNT along with lead-free solder using electroplating process. For co-deposition of CNTs along with the solder, the processing of CNT is very important. Milling and CNT functionalisation are two such parameters that aid in its dispersion and make it active. The present studies include optimization of milling time for CNTs and selection of appropriate activators for functionalisation of CNTs in the electroplating bath.","PeriodicalId":6520,"journal":{"name":"2015 2nd International Symposium on Physics and Technology of Sensors (ISPTS)","volume":"10 1","pages":"120-124"},"PeriodicalIF":0.0,"publicationDate":"2015-03-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90606089","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Non-return microvalve using low temperature co-fired ceramic (LTCC) 低温共烧陶瓷(LTCC)止回微阀

2015 2nd International Symposium on Physics and Technology of Sensors (ISPTS) Pub Date : 2015-03-07 DOI: 10.1109/ISPTS.2015.7220131

Mayur Devrukhakar, Mangesh Dayaphule, Varsha Chaware, V. Giramkar, S. Joseph, G. Phatak

{"title":"Non-return microvalve using low temperature co-fired ceramic (LTCC)","authors":"Mayur Devrukhakar, Mangesh Dayaphule, Varsha Chaware, V. Giramkar, S. Joseph, G. Phatak","doi":"10.1109/ISPTS.2015.7220131","DOIUrl":"https://doi.org/10.1109/ISPTS.2015.7220131","url":null,"abstract":"LTCC is a known suitable platform for microfluidic systems. We have developed actuation-less non-return valve for gases and liquids, which is based upon the inlet and reverse pressure. This work compares three different designs of such valves. In these designs, top lid and bottom cavity layer together forms micro fluidic channel, through which fluid or gas can flow. The pressure based movable ceramic part and the matching cavity at the inlet plays an important role in the valve designs. The designs are such that the liquid or gas flows from inlet to outlet without any difficulty. However, if the liquid or gas flows in reverse direction (i.e. from outlet to inlet) the movable part blocks the path at the cavity and opposes the liquid or gas flow through the channel. Two designs are based upon vertical motion of the movable ceramic part and has a `O' ring to rest to movable part at the inlet side. One of these designs usesZirconia (ZrO2) ball (design 2) while another has square shape (design 3) as the movable parts. Yet another design (design 1) is based upon sliding motion and teflon coating for lubrication. The initial testing using pressurised air (up to 6 bar) indicated that the reverse direction blockade is the best for design 2, which has shown leak rate of 3 ml min-1 at 6bar pressure. This is followed by design 3 and by design 1, which have shown leak rates of 30 ml min-1 and 100ml min-1 respectively.","PeriodicalId":6520,"journal":{"name":"2015 2nd International Symposium on Physics and Technology of Sensors (ISPTS)","volume":"5 1","pages":"289-292"},"PeriodicalIF":0.0,"publicationDate":"2015-03-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"82297503","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Design and development of two axes micro digital sun sensor using linear CMOS detector 采用线性CMOS探测器的两轴微型数字式太阳敏感器的设计与研制

2015 2nd International Symposium on Physics and Technology of Sensors (ISPTS) Pub Date : 2015-03-07 DOI: 10.1109/ISPTS.2015.7220109

A. Maji, H. R. Prabhamani, Veena John, H. S. Ravindra, K. Subhalakshmi, A. S. Laxmiprasad

引用次数: 3

PT04. III-V Compound semiconductors based quantum structures for IR detection PT04。基于化合物半导体的红外探测量子结构

2015 2nd International Symposium on Physics and Technology of Sensors (ISPTS) Pub Date : 2015-03-07 DOI: 10.1109/ISPTS.2015.7220160

S. .. Krupanidhi

{"title":"PT04. III-V Compound semiconductors based quantum structures for IR detection","authors":"S. .. Krupanidhi","doi":"10.1109/ISPTS.2015.7220160","DOIUrl":"https://doi.org/10.1109/ISPTS.2015.7220160","url":null,"abstract":"Long-wavelength infrared (LWIR) detectors are important in many different applications such as space surveillance systems, low-background infrared seeker-tracker systems, remote environmental monitoring, remote analysis of gases in outer space, and remote temperature measurement. One primary concern with producing LWIR detectors is that they must be made with a material having an energy band gap small enough to allow electrons to be excited from the valence band to the conduction band by the infrared radiation. However, the lowest band gap of the III-V material family is InSb (Eg= 0.174 eV @ 300 K), which corresponds to a wavelength of about 7.1 μm. This makes it difficult to fabricate a long-wavelength (8-14 μm) detector from a bulk III-V material. One way to approach is to make use of quantum wells (QWs) grown in the III-V material family. A QW is made when a thin layer of small band gap material is sandwiched between materials that have a higher band gap. This higher band gap material is called the barrier, where as the lower band gap material is called the well. If the well is thin enough and deep enough, then instead of a continuum of allowed states like those in the conduction band of a bulk semiconductor, a few discrete states are formed in the well. The number of discrete states that are formed depend on the physical and material properties of the well and barrier. Present talk deals with the development of Quantum wells and Dots of GaAs for efficient IR detection.","PeriodicalId":6520,"journal":{"name":"2015 2nd International Symposium on Physics and Technology of Sensors (ISPTS)","volume":"27 1","pages":"iv-iv"},"PeriodicalIF":0.0,"publicationDate":"2015-03-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83053058","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Fabrication of WO3/PANI nanocomposites for ammonia gas sensing application 氨气体传感用WO3/PANI纳米复合材料的制备

2015 2nd International Symposium on Physics and Technology of Sensors (ISPTS) Pub Date : 2015-03-07 DOI: 10.1109/ISPTS.2015.7220111

S. Meshram, Sagar Balgude, I. Mulla, P. Adhyapak

引用次数: 1

Synthesis & characterization of iron-carboxylate nanoscale metal organic frameworks for drug delivery 羧化铁纳米金属有机骨架的合成与表征

2015 2nd International Symposium on Physics and Technology of Sensors (ISPTS) Pub Date : 2015-03-07 DOI: 10.1109/ISPTS.2015.7220125

Vandana Gupta, A. Paul, S. Tyagi

引用次数: 2