Effect of post deposition annealing temperature of e-beam evaporated Ta2O5 films on sensitivities of electrolyte-insulator-semiconductor devices

2015 2nd International Symposium on Physics and Technology of Sensors (ISPTS) Pub Date : 2015-03-07 DOI:10.1109/ISPTS.2015.7220115

Narendra Kumar, Abhay Tiwari, J. Kumar, S. Panda

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引用次数: 4

Abstract

In this work, the annealing effects of e-beam deposited Ta₂O₅ films on the pH sensitivities of EIS based sensors are presented. XPS studies confirmed that the films annealed above 700 °C showed the best stoichiometry (Ta_1.96O_5.04) compared to the as deposited film and the films annealed till 600 °C. XRD spectra confirmed the amorphous nature of the as deposited film, which remained amorphous till 600 °C and became polycrystalline above 700 °C. The EIS device showed the maximum sensitivity of 51.4mV/pH for the film annealed at 700 °C, while the device with the as deposited film had a sensitivity of 44.3mV/pH. Further increase in annealing temperature above 700 °C resulted in reduced sensitivity (31.0mV/pH) because of increased interface states (indicated by C-V hysteresis in a MOS device) and enhanced cracks formation in the films (indicated by FESEM). Therefore, the annealing temperature of 700 °C was found to be the optimum annealing temperature for the e-beam deposited Ta₂O₅ films.

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电子束蒸发Ta2O5薄膜沉积后退火温度对电解-绝缘体-半导体器件灵敏度的影响

本文研究了电子束沉积的Ta2O5薄膜退火对EIS传感器pH灵敏度的影响。XPS研究证实，与沉积膜和退火至600℃的膜相比，在700℃以上退火的膜表现出最好的化学计量(Ta1.96O5.04)。XRD谱图证实了沉积膜的非晶态性质，在600°C之前薄膜仍为非晶态，在700°C以上变为多晶。在700℃退火后，EIS器件的最大灵敏度为51.4mV/pH，而沉积后的器件的灵敏度为44.3mV/pH。在700°C以上进一步提高退火温度，由于界面态增加(由MOS器件中的C- v迟滞表明)和薄膜中裂纹形成增强(由FESEM表明)，导致灵敏度降低(31.0mV/pH)。因此，700℃的退火温度是电子束沉积Ta2O5薄膜的最佳退火温度。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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2015 2nd International Symposium on Physics and Technology of Sensors (ISPTS)

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