{"title":"电子束蒸发Ta2O5薄膜沉积后退火温度对电解-绝缘体-半导体器件灵敏度的影响","authors":"Narendra Kumar, Abhay Tiwari, J. Kumar, S. Panda","doi":"10.1109/ISPTS.2015.7220115","DOIUrl":null,"url":null,"abstract":"In this work, the annealing effects of e-beam deposited Ta<sub>2</sub>O<sub>5</sub> films on the pH sensitivities of EIS based sensors are presented. XPS studies confirmed that the films annealed above 700 °C showed the best stoichiometry (Ta<sub>1.96</sub>O<sub>5.04</sub>) compared to the as deposited film and the films annealed till 600 °C. XRD spectra confirmed the amorphous nature of the as deposited film, which remained amorphous till 600 °C and became polycrystalline above 700 °C. The EIS device showed the maximum sensitivity of 51.4mV/pH for the film annealed at 700 °C, while the device with the as deposited film had a sensitivity of 44.3mV/pH. Further increase in annealing temperature above 700 °C resulted in reduced sensitivity (31.0mV/pH) because of increased interface states (indicated by C-V hysteresis in a MOS device) and enhanced cracks formation in the films (indicated by FESEM). Therefore, the annealing temperature of 700 °C was found to be the optimum annealing temperature for the e-beam deposited Ta<sub>2</sub>O<sub>5</sub> films.","PeriodicalId":6520,"journal":{"name":"2015 2nd International Symposium on Physics and Technology of Sensors (ISPTS)","volume":"67 1","pages":"214-218"},"PeriodicalIF":0.0000,"publicationDate":"2015-03-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"Effect of post deposition annealing temperature of e-beam evaporated Ta2O5 films on sensitivities of electrolyte-insulator-semiconductor devices\",\"authors\":\"Narendra Kumar, Abhay Tiwari, J. Kumar, S. Panda\",\"doi\":\"10.1109/ISPTS.2015.7220115\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this work, the annealing effects of e-beam deposited Ta<sub>2</sub>O<sub>5</sub> films on the pH sensitivities of EIS based sensors are presented. XPS studies confirmed that the films annealed above 700 °C showed the best stoichiometry (Ta<sub>1.96</sub>O<sub>5.04</sub>) compared to the as deposited film and the films annealed till 600 °C. XRD spectra confirmed the amorphous nature of the as deposited film, which remained amorphous till 600 °C and became polycrystalline above 700 °C. The EIS device showed the maximum sensitivity of 51.4mV/pH for the film annealed at 700 °C, while the device with the as deposited film had a sensitivity of 44.3mV/pH. Further increase in annealing temperature above 700 °C resulted in reduced sensitivity (31.0mV/pH) because of increased interface states (indicated by C-V hysteresis in a MOS device) and enhanced cracks formation in the films (indicated by FESEM). Therefore, the annealing temperature of 700 °C was found to be the optimum annealing temperature for the e-beam deposited Ta<sub>2</sub>O<sub>5</sub> films.\",\"PeriodicalId\":6520,\"journal\":{\"name\":\"2015 2nd International Symposium on Physics and Technology of Sensors (ISPTS)\",\"volume\":\"67 1\",\"pages\":\"214-218\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2015-03-07\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2015 2nd International Symposium on Physics and Technology of Sensors (ISPTS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISPTS.2015.7220115\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2015 2nd International Symposium on Physics and Technology of Sensors (ISPTS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISPTS.2015.7220115","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Effect of post deposition annealing temperature of e-beam evaporated Ta2O5 films on sensitivities of electrolyte-insulator-semiconductor devices
In this work, the annealing effects of e-beam deposited Ta2O5 films on the pH sensitivities of EIS based sensors are presented. XPS studies confirmed that the films annealed above 700 °C showed the best stoichiometry (Ta1.96O5.04) compared to the as deposited film and the films annealed till 600 °C. XRD spectra confirmed the amorphous nature of the as deposited film, which remained amorphous till 600 °C and became polycrystalline above 700 °C. The EIS device showed the maximum sensitivity of 51.4mV/pH for the film annealed at 700 °C, while the device with the as deposited film had a sensitivity of 44.3mV/pH. Further increase in annealing temperature above 700 °C resulted in reduced sensitivity (31.0mV/pH) because of increased interface states (indicated by C-V hysteresis in a MOS device) and enhanced cracks formation in the films (indicated by FESEM). Therefore, the annealing temperature of 700 °C was found to be the optimum annealing temperature for the e-beam deposited Ta2O5 films.
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