2011 International Symposium on Advanced Packaging Materials (APM)最新文献

{"title":"The effect of two different latent curing agents on the performance of anisotropic conductive adhesives","authors":"Bin Du, Xiong-hui Cai, Jiaqi Hu, Ling Wang, Hongqin Wang, Meiling Deng, Lijiao He, Chao Wan","doi":"10.1109/ISAPM.2011.6105751","DOIUrl":"https://doi.org/10.1109/ISAPM.2011.6105751","url":null,"abstract":"To explore the effect of two different latent curing agents on the performance of anisotropic conductive adhesive (ACA), two adhesive with different latent curing agents (ACA1 and ACA2) were prepared and flexible radio frequency identification (RFID) tag inlays were assembled with them through flip chip technology. Curing profile and thermal stability of the pastes, microstructures and the bonding strength of ACA bonding joints, room temperature and hot humidity storage capacity of inlays were studied. It was found that the type of curing agent had much effect on the performance of ACAs. The ACA using B as the latent curing agent (ACA2) had lower curing peak temperature although it had lower Tg and smaller curing rate than the former (ACA1). After it cured there was less air bubbles in the resin. And it had better bonding strength and anti hot-humidity capacity than the former from other tests. This was important to the reliability of product. Thus, as a whole, latent curing agent B is more suitable to prepare the paste to assemble the flexible RFID tag inlays.","PeriodicalId":6440,"journal":{"name":"2011 International Symposium on Advanced Packaging Materials (APM)","volume":"25 1","pages":"450-455"},"PeriodicalIF":0.0,"publicationDate":"2011-12-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78735490","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Effect of Ni on the morphology of IMC and mechanical properties of SAC-Bi-Ni/Cu joints","authors":"Pengfei Zou, F. Sun, Yang Liu","doi":"10.1109/ISAPM.2011.6105714","DOIUrl":"https://doi.org/10.1109/ISAPM.2011.6105714","url":null,"abstract":"The effects of Ni element on the morphology of intermetallic compounds and some mechanical properties of SAC-Bi-XNi/Cu lead-free solder joints have been investigated. The corresponding mechanical and reliability behaviors were evaluated by performing shear test, fracture mode analysis, nanoindentation experiments and measurement of IMC before and after isothermal aging 200h and 400h at 160°C. The results indicated that with increasing the content of Ni (0∼0.15 wt %), hardness of solder increased, shear strength of solder joints and modulus of elasticity of solder increased and then decreased. SAC-Bi-0.1Ni lead-free solder showed the largest shear strength and Young's modulus. The fracture dimples in SAC-Bi-0.1Ni solder joints were less than other three solders. The thickness of IMC increased originally and then decreased after reflowing, which was thinnest in SAC-Bi-0.05Ni/Cu solder joint. Ni apparently refined the grains of IMC.","PeriodicalId":6440,"journal":{"name":"2011 International Symposium on Advanced Packaging Materials (APM)","volume":"14 1","pages":"267-271"},"PeriodicalIF":0.0,"publicationDate":"2011-12-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90980708","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Mechanical stretching behavior simulation of SWCNT and SWCNT-Ni","authors":"H. Liao, F. Zhu, Sheng Liu","doi":"10.1109/ISAPM.2011.6105677","DOIUrl":"https://doi.org/10.1109/ISAPM.2011.6105677","url":null,"abstract":"When one-dimensional single atom chain was placed at the center of single wall carbon nano-tube (SWCNT) along the axis, and using the molecular dynamics simulation, the mechanical strength of a single-walled could be obtained in terms of the stress-strain curve. At this temperature of 0K, the ultimate stress of a SWCNT with one-dimensional single atom chain was higher than that of a SWCNT without this chain structure, and the result was reverse at 300K. With regard to the rupture of SWCNT, it can be observed that the SWCNT without single atom chain yielded more easily than the decorated SWCNT. The rupture of SWCNT was initiated at the location of distortion, which was introduced by thermal fluctuation and the interference of metal atoms. With the temperature rising, the SWCNT with or without atom Ni will be more likely to fracture. At last, for investigating the influence of increasing atom chains on the mechanical properties of the SWCNT, multi atom chains structure was also used in implementing the same simulation.","PeriodicalId":6440,"journal":{"name":"2011 International Symposium on Advanced Packaging Materials (APM)","volume":"12 1","pages":"85-90"},"PeriodicalIF":0.0,"publicationDate":"2011-12-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"87806274","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Study on soldering flux used for Sn-0.7Cu welding wire","authors":"Cuiping Wang, Jian Wang, Liang Chen, Yuechan Li, Xingjun Liu","doi":"10.1109/ISAPM.2011.6105709","DOIUrl":"https://doi.org/10.1109/ISAPM.2011.6105709","url":null,"abstract":"The wettability and corrosiveness of some organic acids were tested to choose an appropriate activator. Then orthogonal design method was used to determine the proportion among the components of the activator. At last a certain amount of water-white rosin was added to further optimize the dispensation. The final soldering flux for Sn-0.7Cu welding wire caters to the demands of welding process such as good weld ability, good liquidity, less smoke, full and shiny welding spot.","PeriodicalId":6440,"journal":{"name":"2011 International Symposium on Advanced Packaging Materials (APM)","volume":"2 1","pages":"246-249"},"PeriodicalIF":0.0,"publicationDate":"2011-12-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83606810","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Influence of multiple reflows and thermal shock on interfacial IMC of solder joints between Sn0.3Ag0.7Cu solder/pads(HASL, OSP, electrolytic Ni/Au and ENIG PCB finishes)","authors":"G. Wei, D. Luo, Lei Shi, Guanghui He","doi":"10.1109/ISAPM.2011.6105721","DOIUrl":"https://doi.org/10.1109/ISAPM.2011.6105721","url":null,"abstract":"The effects of multiple reflows and thermal shock on interfacial reaction of the solder joints between Sn-0.3Ag-0.7Cu solder/pads (HASL, OSP, electrolytic Ni/Au and ENIG PCB finishes) were systematically investigated in this work. The results showed that the scallop Cu6Sn5 phase were formed in HASL and OSP finish pads during reflows, whereas the cylinder-type (Cu, Ni)6Sn5 near the solder and needle-type (Ni, Cu)3Sn4 adjacent to the Ni layer were formed in electrolytic Ni/Au and ENIG finish pads. For all the four kinds of finishes, the thickness of IMCs increased with reflow times increasing, and the interfacial IMCs growth was controlled by grain boundary diffusion; the growth rate at Cu surface was faster than at Ni surface. Furthermore, it was also indicated that the interfacial IMCs growth were not notable with thermal shock cycle numbers increasing, but Kirkendall voids could be observed in the Sn-Cu-Ni intermetallic compounds layer for electrolytic Ni/Au and ENIG Finish Under thermal shock tests.","PeriodicalId":6440,"journal":{"name":"2011 International Symposium on Advanced Packaging Materials (APM)","volume":"23 1","pages":"302-307"},"PeriodicalIF":0.0,"publicationDate":"2011-12-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"79589570","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Study on interface of Pd-plated Cu wire stitch bonding","authors":"X. Liu, Techun Wang, Yuqi Cong, Jiaji Wang","doi":"10.1109/ISAPM.2011.6105703","DOIUrl":"https://doi.org/10.1109/ISAPM.2011.6105703","url":null,"abstract":"Cu wire is the alternative material to the Au wire in many aspects, such as better electrical and thermal conductivity, higher mechanical strength and its lower cost for the high volume manufacture. Due to the surface oxidation of the Cu wire, the Pd-plated Cu wire (Pd-Cu wire) has been adopted quickly in many fine pitch and high density package devices. Cu wire bonding has been well understood in recent years, while Pd-Cu wire is still under intense investigation. Here we present a study on the interface of the stitch bonding by TEM analysis. Our experiments were performed on 1 mil (∼25um) Pd-Cu wire bonding with Ag plated leadframes under the 5% Hydrogen forming gases. The Pd coating thickness of the Cu wire was about 100nm, while the thickness of the lead-frame's Ag coating was about 6um. The leadframes were subjected to pre-heating treatments at 200°C in normal, 5 minutes extended and 20 minutes extended condition, total 3 samples, in order to investigate whether it will form oxide material on surface of the lead-frames and degenerate the bondability. The research tried to understand the underlying microscopic mechanism of the stitch bonding interface by means of micro-topography and elements distribution analysis. The samples for TEM examination were prepared by specific manual grinding followed by FIB micro-machining. No oxide layer or Oxygen gathering region was found at the interfaces of three samples by TEM topography. The results indicated that the existing Pd coating at the Cu wire surface was able to prevent Cu from being oxidized, and the surface of the lead-frames also showed no oxygen gathering. A thin “dark” Pd layer at the interface of three samples between copper and silver layers was observed by TEM with EDX, and the peak value of the Pd at the interface was about 40 atomic %. The thickness of the Pd layer was about 30nm which was much thinner than the original coating thickness. It indicated Pd coating has been seriously deformed during the bonding process. Each element (Cu, Pd, and Ag) at the interface had low interdiffusion rates under the pre-heating temperature (200°C) from the analysis of the abrupt elements distribution curves. It was observed that the content of the Cu in Ag coating was varying for the three samples. When the pre-heated time of the lead-frame increased at 200°C, the content of the Cu in Ag coatings increased from 10% to 20% and then to 30%. The details of Pd layer microstructure and topography need further investigation with improved analytical means.","PeriodicalId":6440,"journal":{"name":"2011 International Symposium on Advanced Packaging Materials (APM)","volume":"69 1","pages":"213-219"},"PeriodicalIF":0.0,"publicationDate":"2011-12-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90678873","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Low alpha green compound development for CMOS 90 LQFP automotive product","authors":"Jinmei Liu, Yuan Yuan, Junhua Luo, Jinzhong Yao","doi":"10.1109/ISAPM.2011.6105675","DOIUrl":"https://doi.org/10.1109/ISAPM.2011.6105675","url":null,"abstract":"CMOS 90 wafers had been applied to BGA (Ball Grid Array) packages for many years. However, the application to lead package is not much. This paper introduced one application for CMOS 90 wafers to LQFP (Low profile Quad Flat Package). Simultaneously, it is for automotive application and need meet AEC Grade 1 reliability requirements [1]. Low alpha green compound is required for this package to reduce the SER (soft error rate) for electrical robustness. The package is 64 lead LQFP and silver is ring plated for the lead tips. At the beginning, the lead tip delamination was observed after TC (Temperature Cycle) through cross section analysis and SEM check. Pre mold plasma evaluation with Ar/H2 was also tried, but it couldn't remove the delamination. Then mechanical simulation was performed and confirmed that stresses are focused on the tips of the lead which will greatly affect the EMC adhesion. Finally, the compound was optimized by using the high adhesion type of coupling agent to improve the compound adhesion with silver and the lead tip delamination was successfully removed. As a result, the CMOS 90 LQFP package achieved the AEC Grade 1 reliability requirements and passed qualification for production.","PeriodicalId":6440,"journal":{"name":"2011 International Symposium on Advanced Packaging Materials (APM)","volume":"96 1","pages":"11-15"},"PeriodicalIF":0.0,"publicationDate":"2011-12-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76214143","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Investigations of fluxless flip-chip bonding using vacuum ultraviolet and formic acid vapor surface treatment","authors":"N. Unami, H. Noma, K. Sakuma, A. Shigetou, S. Shoji, J. Mizuno","doi":"10.1109/ISAPM.2011.6105704","DOIUrl":"https://doi.org/10.1109/ISAPM.2011.6105704","url":null,"abstract":"We studied the effects of surface treatment using vacuum ultraviolet (VUV) and formic acid vapor for SnCu-Au flip-chip bonding. Sn-rich solder bumps are widely used for flip-chip interconnections because of low melting temperature and high mechanical strength. For fine pitch interconnections, surface modification is needed before the bonding process. X-ray Photoelectron Spectroscopy (XPS) and Auger Electron Spectroscopy (AES) were used to investigate Sn surfaces. The results showed how the VUV/O3 surface treatment removes the carbon-based organic contaminants from the Sn surfaces and the formic acid treatment reduces the metal oxides of Sn. Combination of VUV/O3 and formic acid treatments improved shear strength of a bonded sample. The average shear strength of each bump with VUV/O3 and/or formic acid treatment is about twice that of a bump with no treatment.","PeriodicalId":6440,"journal":{"name":"2011 International Symposium on Advanced Packaging Materials (APM)","volume":"60 1","pages":"220-225"},"PeriodicalIF":0.0,"publicationDate":"2011-12-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83073600","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Preparation and dielectric properties of CaCu3Ti4O12-(NaBi)0.5Cu3Ti4O12 composites","authors":"Rong Yu, Laura Chen, H. Xue, Z. Xiong","doi":"10.1109/ISAPM.2011.6105669","DOIUrl":"https://doi.org/10.1109/ISAPM.2011.6105669","url":null,"abstract":"The composites of CaCu<inf>3</inf>Ti<inf>4</inf>O<inf>12</inf>-x(NaBi)<inf>0.5</inf>Cu<inf>3</inf>Ti<inf>4</inf>O<inf>12</inf>, i.e. CCTO-xNBCTO, were prepared for x value from 0 to 0.1. Ultrahigh dielectric constant, ε =7×10⁵, and dielectric loss, tanδ = 0.48, of the composites with x=0.05 were obtained. The relations between crystal structures with XRD spectra and dielectric properties with LCR measurement were investigated, in which. An internal barrier layer capacitance effect is used to explain the mechanism of such dielectric behavior. The frequency dependence of the dielectric constant of CCTO-NBCTO composites were measured from 20Hz to 1MHz, showing that the loss tangent apparently decreased with the increase of frequency. The temperature dependence of both the dielectric constant and loss tangent of the samples were also obtained. It was found that the dielectric properties was almost independent of temperature in the range from −20°C to 80°C, however, the loss tangent were increased dramatically with a further increase in temperature, above 80°C.","PeriodicalId":6440,"journal":{"name":"2011 International Symposium on Advanced Packaging Materials (APM)","volume":"85 7 1","pages":"52-55"},"PeriodicalIF":0.0,"publicationDate":"2011-12-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"87675462","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Multipurpose quick 3D packaging process","authors":"Zhao Yongrui, Ma Hongbo, Bi Minglu, Huang Zhanwu, Jia Jun, Lai Xin-quan","doi":"10.1109/ISAPM.2011.6105718","DOIUrl":"https://doi.org/10.1109/ISAPM.2011.6105718","url":null,"abstract":"A novel small-sized chip circuit auxiliary layer (SCCAL) multipurpose 3D package process in order to solve the problem of shortages in flexibility and diversity of the traditional through-silicon via (TSV) process is presented in this paper. It meets the requirement of large amount of silicon dies which need connecting together by TSV technology but were designed respectively that wafers were processed without via holes drilling. This process involves a small-sized chip circuit auxiliary layer which is used as a carrying base and connecting auxiliary layer. Also, an improved TSV technology is involved that via holes could be produced through the PADs in the silicon dies. It is verified that, the whole process time of 3D packaging process is shortened drastically and the flexibility of the 3D packaging is greatly improved.","PeriodicalId":6440,"journal":{"name":"2011 International Symposium on Advanced Packaging Materials (APM)","volume":"13 1","pages":"287-290"},"PeriodicalIF":0.0,"publicationDate":"2011-12-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85969566","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}