{"title":"Study on interface of Pd-plated Cu wire stitch bonding","authors":"X. Liu, Techun Wang, Yuqi Cong, Jiaji Wang","doi":"10.1109/ISAPM.2011.6105703","DOIUrl":null,"url":null,"abstract":"Cu wire is the alternative material to the Au wire in many aspects, such as better electrical and thermal conductivity, higher mechanical strength and its lower cost for the high volume manufacture. Due to the surface oxidation of the Cu wire, the Pd-plated Cu wire (Pd-Cu wire) has been adopted quickly in many fine pitch and high density package devices. Cu wire bonding has been well understood in recent years, while Pd-Cu wire is still under intense investigation. Here we present a study on the interface of the stitch bonding by TEM analysis. Our experiments were performed on 1 mil (∼25um) Pd-Cu wire bonding with Ag plated leadframes under the 5% Hydrogen forming gases. The Pd coating thickness of the Cu wire was about 100nm, while the thickness of the lead-frame's Ag coating was about 6um. The leadframes were subjected to pre-heating treatments at 200°C in normal, 5 minutes extended and 20 minutes extended condition, total 3 samples, in order to investigate whether it will form oxide material on surface of the lead-frames and degenerate the bondability. The research tried to understand the underlying microscopic mechanism of the stitch bonding interface by means of micro-topography and elements distribution analysis. The samples for TEM examination were prepared by specific manual grinding followed by FIB micro-machining. No oxide layer or Oxygen gathering region was found at the interfaces of three samples by TEM topography. The results indicated that the existing Pd coating at the Cu wire surface was able to prevent Cu from being oxidized, and the surface of the lead-frames also showed no oxygen gathering. A thin “dark” Pd layer at the interface of three samples between copper and silver layers was observed by TEM with EDX, and the peak value of the Pd at the interface was about 40 atomic %. The thickness of the Pd layer was about 30nm which was much thinner than the original coating thickness. It indicated Pd coating has been seriously deformed during the bonding process. Each element (Cu, Pd, and Ag) at the interface had low interdiffusion rates under the pre-heating temperature (200°C) from the analysis of the abrupt elements distribution curves. It was observed that the content of the Cu in Ag coating was varying for the three samples. When the pre-heated time of the lead-frame increased at 200°C, the content of the Cu in Ag coatings increased from 10% to 20% and then to 30%. The details of Pd layer microstructure and topography need further investigation with improved analytical means.","PeriodicalId":6440,"journal":{"name":"2011 International Symposium on Advanced Packaging Materials (APM)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2011-12-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2011 International Symposium on Advanced Packaging Materials (APM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISAPM.2011.6105703","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2
Abstract
Cu wire is the alternative material to the Au wire in many aspects, such as better electrical and thermal conductivity, higher mechanical strength and its lower cost for the high volume manufacture. Due to the surface oxidation of the Cu wire, the Pd-plated Cu wire (Pd-Cu wire) has been adopted quickly in many fine pitch and high density package devices. Cu wire bonding has been well understood in recent years, while Pd-Cu wire is still under intense investigation. Here we present a study on the interface of the stitch bonding by TEM analysis. Our experiments were performed on 1 mil (∼25um) Pd-Cu wire bonding with Ag plated leadframes under the 5% Hydrogen forming gases. The Pd coating thickness of the Cu wire was about 100nm, while the thickness of the lead-frame's Ag coating was about 6um. The leadframes were subjected to pre-heating treatments at 200°C in normal, 5 minutes extended and 20 minutes extended condition, total 3 samples, in order to investigate whether it will form oxide material on surface of the lead-frames and degenerate the bondability. The research tried to understand the underlying microscopic mechanism of the stitch bonding interface by means of micro-topography and elements distribution analysis. The samples for TEM examination were prepared by specific manual grinding followed by FIB micro-machining. No oxide layer or Oxygen gathering region was found at the interfaces of three samples by TEM topography. The results indicated that the existing Pd coating at the Cu wire surface was able to prevent Cu from being oxidized, and the surface of the lead-frames also showed no oxygen gathering. A thin “dark” Pd layer at the interface of three samples between copper and silver layers was observed by TEM with EDX, and the peak value of the Pd at the interface was about 40 atomic %. The thickness of the Pd layer was about 30nm which was much thinner than the original coating thickness. It indicated Pd coating has been seriously deformed during the bonding process. Each element (Cu, Pd, and Ag) at the interface had low interdiffusion rates under the pre-heating temperature (200°C) from the analysis of the abrupt elements distribution curves. It was observed that the content of the Cu in Ag coating was varying for the three samples. When the pre-heated time of the lead-frame increased at 200°C, the content of the Cu in Ag coatings increased from 10% to 20% and then to 30%. The details of Pd layer microstructure and topography need further investigation with improved analytical means.
铜线在许多方面都是金线的替代材料,如更好的导电性和导热性,更高的机械强度和更低的成本,适合大批量生产。由于铜线的表面氧化,镀钯铜线(Pd-Cu线)在许多细间距和高密度封装器件中得到了迅速的应用。近年来,人们对铜线的键合已经有了很好的了解,而钯铜线的键合仍处于研究的火热阶段。本文用透射电镜分析方法研究了针缝结合界面。我们的实验是在5%的氢气形成气体下,在1 mil (~ 25um)的Pd-Cu线与镀银引线框结合进行的。Cu线的Pd涂层厚度约为100nm,引线框架的Ag涂层厚度约为6um。在正常、延长5分钟和延长20分钟的条件下,共3个样品进行200℃的预热处理,以研究是否会在引线框架表面形成氧化物质并降低其粘结性。本研究试图通过微观形貌和元素分布分析来了解针状结合界面的微观机制。采用特定的手工磨削和FIB微加工制备TEM检测样品。TEM形貌分析表明,三种试样的界面处均未发现氧化层和氧聚集区。结果表明,铜线表面的Pd涂层能够防止铜被氧化,铅框表面也没有氧聚集现象。透射电子显微镜(TEM)和电子能谱仪(EDX)观察到,在三种样品的铜层和银层之间的界面处有一层薄的“暗”钯层,界面处钯的峰值约为40原子%。Pd层厚度约为30nm,比原涂层厚度薄得多。表明Pd涂层在结合过程中发生了严重的变形。从元素突变分布曲线分析可知,在预热温度(200℃)下,Cu、Pd和Ag元素在界面处的互扩散速率较低。结果表明,三种样品的镀层中Cu的含量是不同的。在200℃下,随着引线框架预热时间的增加,Ag涂层中Cu的含量从10%增加到20%,再增加到30%。Pd层的微观结构和形貌细节有待改进的分析手段进一步研究。