{"title":"Investigation of class-B/J continuous modes in broadband GaN power amplifiers","authors":"S. Preis, D. Gruner, G. Boeck","doi":"10.1109/MWSYM.2012.6258413","DOIUrl":"https://doi.org/10.1109/MWSYM.2012.6258413","url":null,"abstract":"The class-B/J mode continuum in power amplifiers (PAs) defined at the current source plane is discussed considering different parasitic elements including CDS as well as the package. Based on this realistic device description the change of the continuous load impedances depending on the reference plane is demonstrated. It is shown that the design flexibility predicted by the continuous mode theory decreases if the transistor package is taken into account. The presented investigations provide the basis for the design of a broadband GaN PA. In the frequency range of 0.9 GHz to 1.8 GHz, this PA achieves a saturated output power of more than 70 W with an efficiency η of 56–63 %. In the extended frequency band up to 2.3 GHz an output power of still 60 W with 53 % drain efficiency is available.","PeriodicalId":6385,"journal":{"name":"2012 IEEE/MTT-S International Microwave Symposium Digest","volume":"43 1","pages":"1-3"},"PeriodicalIF":0.0,"publicationDate":"2012-06-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81124116","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Miniaturized high-order UWB bandpass filter using third-order E-shape microstrip structure","authors":"R. T. Hammed, D. Mirshekar-Syahkal","doi":"10.1109/MWSYM.2012.6258259","DOIUrl":"https://doi.org/10.1109/MWSYM.2012.6258259","url":null,"abstract":"Recently a new systematic design rule was proposed to realize high-order UWB bandpass filters using cascaded E-shape microstrip structures. The responses of these miniaturized filters show one transmission zero at the upper stop-band. In order to improve the selectivity at the lower stop-band, this paper proposes a new generation of miniaturized high-order UWB bandpass filters having an attenuation pole in the lower stopband. The filters, employing the E-shape microstrip structure, are the cascade of third-order UWB bandpass filters electromagnetically coupled through λ/4 microstrip lines realised on the dielectric superstrate of the structure. A high selectivity sixth-order UWB bandpass filter is designed, simulated, fabricated and measured. The dimension of the filter is about 4 mm × 6 mm × 0.5 mm excluding the feeding ports. The results from the simulation and measurement show good agreement. It is observed that this filter has attenuation better than 40 dB immediately after the passband, and over a large frequency range in the lower and upper stop bands.","PeriodicalId":6385,"journal":{"name":"2012 IEEE/MTT-S International Microwave Symposium Digest","volume":"8 1","pages":"1-3"},"PeriodicalIF":0.0,"publicationDate":"2012-06-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81973975","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Implementing voltage controlled current source in electromagnetic full-wave simulation using the FDTD method","authors":"K. ElMahgoub, A. Elsherbeni","doi":"10.1109/MWSYM.2012.6258366","DOIUrl":"https://doi.org/10.1109/MWSYM.2012.6258366","url":null,"abstract":"The implementation of a voltage controlled current source (VCCS) in full-wave electromagnetic simulation using finite-difference time-domain (FDTD) is introduced. The VCCS is used to model a metal oxide semiconductor field effect transistor (MOSFET) commonly used in microwave circuits. This new approach is verified with several numerical examples including circuits with VCCS and MOSFET. Good agreement is obtained when the results are compared with those based on analytical solution and PSpice.","PeriodicalId":6385,"journal":{"name":"2012 IEEE/MTT-S International Microwave Symposium Digest","volume":"16 1","pages":"1-3"},"PeriodicalIF":0.0,"publicationDate":"2012-06-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"73423308","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
S. Bensmida, K. Mimis, K. Morris, M. Beach, J. Mcgeehan, J. Lees, J. Benedikt, P. Tasker
{"title":"Overlapped segment piece-wise polynomial pre-distortion for the linearisation of power amplifiers in the presence of high PAPR OFDM signals","authors":"S. Bensmida, K. Mimis, K. Morris, M. Beach, J. Mcgeehan, J. Lees, J. Benedikt, P. Tasker","doi":"10.1109/MWSYM.2012.6259543","DOIUrl":"https://doi.org/10.1109/MWSYM.2012.6259543","url":null,"abstract":"A modified piece-wise polynomial pre-distortion is proposed, investigated and compared against classic memoryless polynomial pre-distortion. The proposed enhanced piece-wise polynomial pre-distortion uses the overlap between segments to ensure continuity in the total pre-distortion function. The implementation of overlap allows the use of a simple error estimation algorithm to minimise hand over error. The classic and proposed piece-wise pre-distortion performances are assessed and compared for several sets of polynomial coefficients. The proposed method is shown to consistently outperform classical polynomial pre-distortion in terms of required coefficients and linearity improvement. The method is applied for the linearisation of an envelope tracking Class-J PA at 1.7GHz, under a 1.4MHz LTE signal with a 14.4dB PAPR.","PeriodicalId":6385,"journal":{"name":"2012 IEEE/MTT-S International Microwave Symposium Digest","volume":"108 1","pages":"1-3"},"PeriodicalIF":0.0,"publicationDate":"2012-06-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"80454054","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Ling Yan Zhang, Christophe Bounaix Morand du Puch, A. Lacroix, C. Dalmay, A. Pothier, C. Lautrette, S. Battu, F. Lalloué, M. Jauberteau, P. Blondy
{"title":"Microwave biosensors for identifying cancer cell aggressiveness grade","authors":"Ling Yan Zhang, Christophe Bounaix Morand du Puch, A. Lacroix, C. Dalmay, A. Pothier, C. Lautrette, S. Battu, F. Lalloué, M. Jauberteau, P. Blondy","doi":"10.1109/MWSYM.2012.6259539","DOIUrl":"https://doi.org/10.1109/MWSYM.2012.6259539","url":null,"abstract":"This paper illustrates the potential of microwave frequencies for biological analysis. Once penetrating inside biological cells, microwaves can interact with their intracellular content and inform on their safe or malignant state. This work demonstrates that their cancer grade (i.e. aggressiveness level) can also be identified by this way. Hence, based on permittivity measurements on three colon cancer cell lines loading RF resonators, the presented results show significant differences of electromagnetic signature in the cancer grade of analyzed cells. This sensing method appears very promising to develop new powerful tools for early cancer diagnostic.","PeriodicalId":6385,"journal":{"name":"2012 IEEE/MTT-S International Microwave Symposium Digest","volume":"68 1","pages":"1-3"},"PeriodicalIF":0.0,"publicationDate":"2012-06-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"82527011","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Noise figure characterization of a subharmonic graphene FET mixer","authors":"M. Andersson, O. Habibpour, J. Vukusic, J. Stake","doi":"10.1109/MWSYM.2012.6259519","DOIUrl":"https://doi.org/10.1109/MWSYM.2012.6259519","url":null,"abstract":"We report on the first room temperature noise figure measurement of a graphene FET subharmonic resistive mixer in the interval fRF = 2-5 GHz. Due to an 8 nm thin Al2O3 gate dielectric it can operate with a conversion loss in the range 20–22 dB at only 0 dBm of local oscillator power. The measurement yields a noise figure close to the conversion loss, thus determining the noise to be thermal in origin, which is promising for cryogenic applications. The general route to lower noise figure is an improvement of the conversion loss.","PeriodicalId":6385,"journal":{"name":"2012 IEEE/MTT-S International Microwave Symposium Digest","volume":"117 1","pages":"1-3"},"PeriodicalIF":0.0,"publicationDate":"2012-06-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"82570942","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Debin Hou, W. Hong, W. Goh, A. Arasu, Y. Xiong, Chang Liu, M. Madihian
{"title":"A D-band compact rat-race coupler using novel phase inverter in standard CMOS process","authors":"Debin Hou, W. Hong, W. Goh, A. Arasu, Y. Xiong, Chang Liu, M. Madihian","doi":"10.1109/MWSYM.2012.6259758","DOIUrl":"https://doi.org/10.1109/MWSYM.2012.6259758","url":null,"abstract":"This paper describes a D-band on-chip rat-race coupler using a novel phase inverter and developed in a standard CMOS process. The simple structural phase inverter which is based on the characteristic impedance and phase difference analysis has demonstrated its potential for wideband and compact millimeter-wave frequency range applications. The developed rat-race coupler using the proposed phase inverter, features a 40% size reduction and over 60% bandwidth improvement compared to conventional structures. In the complete D-band range, measured amplitude and phase imbalances for the coupler are within 0.5 dB and 15°, respectively. The port-to-port isolation is better than 25 dB in the D-band range with the highest value of 41 dB at 118 GHz. The insertion loss achieves 1.2 ± 0.3 dB and the coral size of the coupler is only 290 × 162 µm2. The proposed coupler has a huge potential for integration in single-chip systems over 100 GHz.","PeriodicalId":6385,"journal":{"name":"2012 IEEE/MTT-S International Microwave Symposium Digest","volume":"64 1","pages":"1-3"},"PeriodicalIF":0.0,"publicationDate":"2012-06-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78669199","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Dynamic linearization of diodes for high speed and peak power detection applications","authors":"Abul Hasan, M. Helaoui, F. Ghannouchi","doi":"10.1109/MWSYM.2012.6259710","DOIUrl":"https://doi.org/10.1109/MWSYM.2012.6259710","url":null,"abstract":"In this paper we show that the characteristics of diode based peak power detectors are dependent on the type of input excitation signal. Linearization of peak power detectors using continuous wave (CW) characterized data results in inaccurate linearized peak powers when compared with peak power data obtained from actual measurements. By comparing the diode power detector behavior under different types of excitations, it is proved that CW characterized data can't be used to linearize peak power detectors when excited with real (modulated) signals having high peak-to-average-power (PAPR) value. For accurate linearization, two new approaches have been proposed; one using calibration factor and another using dynamic calibration. The proposed approaches improved the accuracy of the diode peak power detector used for measurement validation.","PeriodicalId":6385,"journal":{"name":"2012 IEEE/MTT-S International Microwave Symposium Digest","volume":"37 1","pages":"1-3"},"PeriodicalIF":0.0,"publicationDate":"2012-06-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"87670932","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Hao Jiang, S. Zhou, Di Lan, Junmin Zhang, H. Shahnasser, K. Goldman, S. Roy
{"title":"A parallel-trace high-Q planar spiral coil for biomedical implants","authors":"Hao Jiang, S. Zhou, Di Lan, Junmin Zhang, H. Shahnasser, K. Goldman, S. Roy","doi":"10.1109/MWSYM.2012.6259488","DOIUrl":"https://doi.org/10.1109/MWSYM.2012.6259488","url":null,"abstract":"High-Q inductive coils are essential components in biomedical implants for efficient wireless charging and effective wireless sensing. The planar spiral coil (PSC) that can be easily optimized and reliably fabricated by lithographic tools is a preferred candidate. To support the inductive coupling at MHz range, the size of PSCs used in implants is much larger than those used in wireless communication circuits. Therefore, to achieve high Q, it is imperative to reduce the metal trace's unit-length-resistance. In this paper, multiple parallel-connected metal traces, instead of a conventional single trace, have been employed to reduce the unit-length-resistance by mitigating the skin effect. Although the approach was used to make stranded wires for mega-watts transmission systems, it has been used to design PSCs for the first time. The parallel-trace PSC exhibits 38%~53% improvements in Q when it resonates with a capacitor at ~10 MHz. Measurement results also indicate that there is ~10% inductance reduction in the parallel-trace PSC compared to the single-trace PSC of the same design. Measurement results also indicate that, in a parallel-trace PSC, the length difference between the parallel-connected, side-by-side traces when they are winded into a coil, and the dielectric environment difference when they are placed in different layers, can be neglected when the operating frequency is less than the PSCs self-resonating frequency. Utilizing widely-available planar fabrication technologies, the parallel-trace PSC can be widely adopted in biomedical implants.","PeriodicalId":6385,"journal":{"name":"2012 IEEE/MTT-S International Microwave Symposium Digest","volume":"106 1","pages":"1-3"},"PeriodicalIF":0.0,"publicationDate":"2012-06-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"87818494","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
C. Goldsmith, J.C.M. Hwang, C. Gudeman, O. Auciello, J. Ebel, H. Newman
{"title":"Robustness of RF MEMS capacitive switches in Harsh Environments","authors":"C. Goldsmith, J.C.M. Hwang, C. Gudeman, O. Auciello, J. Ebel, H. Newman","doi":"10.1109/MWSYM.2012.6259627","DOIUrl":"https://doi.org/10.1109/MWSYM.2012.6259627","url":null,"abstract":"RF MEMS switches have evolved significantly since the early days of testing unpackaged devices in an uncontrolled environment with failure modes that could only be guessed at. Today, MEMS switch technology has effective, RF-friendly wafer-level packaging, demonstrated temperature robustness, and failure modes that can be characterized and modeled from accelerated testing. This presentation overviews the advances in packaging, reliability, and environmental robustness for RF MEMS switches made on DARPA's HERMIT program. It also includes more recent developments in novel nanostructured switch dielectrics, CMOS co-integration, intelligent CMOS control, and operation of RF MEMS in adverse thermal and radiation environments.","PeriodicalId":6385,"journal":{"name":"2012 IEEE/MTT-S International Microwave Symposium Digest","volume":"8 1","pages":"1-3"},"PeriodicalIF":0.0,"publicationDate":"2012-06-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"87851899","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}