宽带GaN功率放大器中b /J类连续模式的研究

S. Preis, D. Gruner, G. Boeck
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引用次数: 27

摘要

讨论了在电流源平面定义的功率放大器的b /J类模式连续体,考虑了包括CDS在内的不同寄生元件以及封装。在此基础上,推导了连续负载阻抗随参考平面的变化规律。结果表明,在考虑晶体管封装的情况下,连续模理论预测的设计灵活性降低。本文的研究为宽带GaN PA的设计提供了基础。在0.9 GHz ~ 1.8 GHz频率范围内,该放大器的饱和输出功率大于70 W,效率η为56 ~ 63%。在高达2.3 GHz的扩展频带中,输出功率仍然为60w,漏极效率为53%。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Investigation of class-B/J continuous modes in broadband GaN power amplifiers
The class-B/J mode continuum in power amplifiers (PAs) defined at the current source plane is discussed considering different parasitic elements including CDS as well as the package. Based on this realistic device description the change of the continuous load impedances depending on the reference plane is demonstrated. It is shown that the design flexibility predicted by the continuous mode theory decreases if the transistor package is taken into account. The presented investigations provide the basis for the design of a broadband GaN PA. In the frequency range of 0.9 GHz to 1.8 GHz, this PA achieves a saturated output power of more than 70 W with an efficiency η of 56–63 %. In the extended frequency band up to 2.3 GHz an output power of still 60 W with 53 % drain efficiency is available.
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