Implementing voltage controlled current source in electromagnetic full-wave simulation using the FDTD method

Abstract

The implementation of a voltage controlled current source (VCCS) in full-wave electromagnetic simulation using finite-difference time-domain (FDTD) is introduced. The VCCS is used to model a metal oxide semiconductor field effect transistor (MOSFET) commonly used in microwave circuits. This new approach is verified with several numerical examples including circuits with VCCS and MOSFET. Good agreement is obtained when the results are compared with those based on analytical solution and PSpice.