{"title":"利用时域有限差分法实现了压控电流源在电磁全波仿真中的应用","authors":"K. ElMahgoub, A. Elsherbeni","doi":"10.1109/MWSYM.2012.6258366","DOIUrl":null,"url":null,"abstract":"The implementation of a voltage controlled current source (VCCS) in full-wave electromagnetic simulation using finite-difference time-domain (FDTD) is introduced. The VCCS is used to model a metal oxide semiconductor field effect transistor (MOSFET) commonly used in microwave circuits. This new approach is verified with several numerical examples including circuits with VCCS and MOSFET. Good agreement is obtained when the results are compared with those based on analytical solution and PSpice.","PeriodicalId":6385,"journal":{"name":"2012 IEEE/MTT-S International Microwave Symposium Digest","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2012-06-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"Implementing voltage controlled current source in electromagnetic full-wave simulation using the FDTD method\",\"authors\":\"K. ElMahgoub, A. Elsherbeni\",\"doi\":\"10.1109/MWSYM.2012.6258366\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The implementation of a voltage controlled current source (VCCS) in full-wave electromagnetic simulation using finite-difference time-domain (FDTD) is introduced. The VCCS is used to model a metal oxide semiconductor field effect transistor (MOSFET) commonly used in microwave circuits. This new approach is verified with several numerical examples including circuits with VCCS and MOSFET. Good agreement is obtained when the results are compared with those based on analytical solution and PSpice.\",\"PeriodicalId\":6385,\"journal\":{\"name\":\"2012 IEEE/MTT-S International Microwave Symposium Digest\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2012-06-17\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2012 IEEE/MTT-S International Microwave Symposium Digest\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MWSYM.2012.6258366\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 IEEE/MTT-S International Microwave Symposium Digest","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MWSYM.2012.6258366","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Implementing voltage controlled current source in electromagnetic full-wave simulation using the FDTD method
The implementation of a voltage controlled current source (VCCS) in full-wave electromagnetic simulation using finite-difference time-domain (FDTD) is introduced. The VCCS is used to model a metal oxide semiconductor field effect transistor (MOSFET) commonly used in microwave circuits. This new approach is verified with several numerical examples including circuits with VCCS and MOSFET. Good agreement is obtained when the results are compared with those based on analytical solution and PSpice.
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