2012 IEEE 62nd Electronic Components and Technology Conference最新文献_第10页

Evaluation of raw substrate variation from different suppliers and processes and their impact on package warpage 评估来自不同供应商和工艺的原始基板差异及其对包装翘曲的影响

2012 IEEE 62nd Electronic Components and Technology Conference Pub Date : 2012-07-30 DOI: 10.1109/ECTC.2012.6249020

Wei Lin, S. Wen, A. Yoshida, Jeong-Cheol Shin

{"title":"Evaluation of raw substrate variation from different suppliers and processes and their impact on package warpage","authors":"Wei Lin, S. Wen, A. Yoshida, Jeong-Cheol Shin","doi":"10.1109/ECTC.2012.6249020","DOIUrl":"https://doi.org/10.1109/ECTC.2012.6249020","url":null,"abstract":"Thin substrates have been used in more and more package-on-package (PoP) designs to meet the overall package thickness requirement. Low CTE cores are becoming more popular to reduce thin package warpage. On the other hand, substrates used in the same product are often sourced from multiple suppliers. Packages built with thin substrates sourced from different suppliers were found to have different end-of-line (EOL) package warpage. In this paper, 5 legs of substrates from 3 different suppliers were studied and compared with regard to raw substrate warpage, raw substrate modulus and CTE properties, and their reactions to 1× reflow thermal conditioning in order to understand any correlation to end-of-line package warpage. It was found that raw substrates sourced from different suppliers, or different processes in the same supplier, could have different levels of initial bare substrate warpage due to residual stress. Simulation results showed clear correlation between bare substrate warpage and EOL package warpage. However, such correlation was not observed with the limited measurement data collected. It was also found that properties (CTE and modulus) of finished composite substrates from different suppliers and processes could vary significantly, especially in the high temperature range. The difference in properties could be correlated to the difference at end-of-line package warpage in some cases. Further more, the substrates from different suppliers or processes could change their warpage, modulus and CTE properties in different ways after 1× reflow temperature conditioning. The study shows that it becomes more and more important to have better quality control of substrates sourced from different suppliers as substrate becomes thin and low CTE core is used.","PeriodicalId":6384,"journal":{"name":"2012 IEEE 62nd Electronic Components and Technology Conference","volume":"1 1","pages":"1406-1411"},"PeriodicalIF":0.0,"publicationDate":"2012-07-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78251613","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 11

Microfluidic chips fabrication from UV curable adhesives for heterogeneous integration 用紫外光固化胶粘剂制备异质集成微流控芯片

2012 IEEE 62nd Electronic Components and Technology Conference Pub Date : 2012-07-30 DOI: 10.1109/ECTC.2012.6249109

V. Mokkapati, O. Bethge, R. Hainberger, H. Brueckl

{"title":"Microfluidic chips fabrication from UV curable adhesives for heterogeneous integration","authors":"V. Mokkapati, O. Bethge, R. Hainberger, H. Brueckl","doi":"10.1109/ECTC.2012.6249109","DOIUrl":"https://doi.org/10.1109/ECTC.2012.6249109","url":null,"abstract":"Conventional fabrication of microfluidic chips is based on silicon, glass, PDMS and various other polymeric materials (COC, polycarbonate, PMMA etc). Silicon and glass processing technologies are highly developed and the chips can be fabricated with ease. Polymeric microfluidic chips have become very common in recent years due to the demand for the cheap and disposable devices. New entrants in to the field are UV curable adhesives which are gaining recognition as promising players in microfluidics. UV curable adhesives are generally used in various applications ranging from usage in the manufacture of parts of an aircraft to sealing/packaging of microfluidic chips. Unlike any other previously discussed materials UV curable adhesives have the flexibility in alignment and bonding during fabrication process. These adhesives can be applied in between two surfaces which are to be glued and can be left like that for hours to days without bonding them as long as the glue is not exposed to UV light. In this paper we explain the detailed fabrication of microfluidic chips (100μm wide and 3μm (NOA74), 22μm (NOA 68) deep) completely made from UV curable adhesives having better chemical resistance, permeability and flexible surface treatments compared to other known polymeric materials. Firstly the patterns were etched on silicon, followed by PDMS molding and subsequently UV curable adhesives were casted and cured on structured PDMS master. After unmolding the stamps were mounted on a glass substrate and permanent bonding was achieved by further UV treatment and/or oxygen plasma treatment. The final devices were successfully tested for any leakage. These microfluidic chips will be integrated with a sensor and antenna for further biological studies. UV curable adhesives are also used for permanent/temporary sealing of microfluidic channels. These adhesives, which are still new to the fluidics branch can functionally and economically, have a greater impact on microfluidics.","PeriodicalId":6384,"journal":{"name":"2012 IEEE 62nd Electronic Components and Technology Conference","volume":"33 1","pages":"1965-1969"},"PeriodicalIF":0.0,"publicationDate":"2012-07-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76223806","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 4

Development of a stacked WCSP package platform using TSV (Through Silicon Via) technology 采用TSV (Through Silicon Via)技术的堆叠式WCSP封装平台的开发

2012 IEEE 62nd Electronic Components and Technology Conference Pub Date : 2012-07-30 DOI: 10.1109/ECTC.2012.6248967

R. Dunne, Yoshimi Takahashi, Kazuaki Mawatari, Masamitsu Matsuura, Tom Bonifield, Philipp Steinmann, D. Stepniak

{"title":"Development of a stacked WCSP package platform using TSV (Through Silicon Via) technology","authors":"R. Dunne, Yoshimi Takahashi, Kazuaki Mawatari, Masamitsu Matsuura, Tom Bonifield, Philipp Steinmann, D. Stepniak","doi":"10.1109/ECTC.2012.6248967","DOIUrl":"https://doi.org/10.1109/ECTC.2012.6248967","url":null,"abstract":"To enable the miniaturization, electrical performance and heterogeneous functionality needs for emerging Analog applications, a stacked Wafer-level Chip Scale Package (WCSP) package platform has been developed using Through-Silicon Via (TSV) technology. This allows stacking of ICs, MEMS, passives and other components in the vertical direction onto active or passive TSV wafers, to create innovative System-in-Package (SiP) product solutions. Since Analog devices are small in size and cost is a key care about, a careful selection of the integration flow is required to achieve a low cost packaging solution. In this work, an integration flow for the stacked WCSP package is presented, along with development details for the Chip-on-Wafer (CoW) bonding and wafer overmolding unit processes. The test vehicle was 3mm × 3mm in size and used 25u diameter Cu TSVs in a 200mm diameter wafer. Interconnect reliability evaluations were done with different micro-bump Under Bump Metallurgy (UBM) and TSV tip surface finish metallization combinations. Wafer ovemolding development included warpage, saw and adhesion evaluations with multiple mold materials. A back-end assembly flow was established with a mass reflow bonding process and an overmold material with low CTE and intermediate Tg and modulus. Samples were prepared with mold-on-die and exposed die package structures. Excellent time-zero yields were obtained, with an average TSV micro-bump interconnect resistance of 25 mohms. Results and failures modes from preliminary reliability testing are included.","PeriodicalId":6384,"journal":{"name":"2012 IEEE 62nd Electronic Components and Technology Conference","volume":"19 1","pages":"1062-1067"},"PeriodicalIF":0.0,"publicationDate":"2012-07-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78231569","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 26

Reliability of large die ultra low-k lead-free flip chip packages 大模超低k无铅倒装芯片封装的可靠性

2012 IEEE 62nd Electronic Components and Technology Conference Pub Date : 2012-07-30 DOI: 10.1109/ECTC.2012.6248937

L. Yip

{"title":"Reliability of large die ultra low-k lead-free flip chip packages","authors":"L. Yip","doi":"10.1109/ECTC.2012.6248937","DOIUrl":"https://doi.org/10.1109/ECTC.2012.6248937","url":null,"abstract":"With the industry movement towards lead-free solders and advanced silicon process nodes with ultra low-k dielectrics, flip chip packaging is faced with significant assembly and reliability challenges. Since lead-free solder bumps are brittle, they can easily crack without adequate support from the underfill material during thermal stress. Lead-free solder bumps have less solder fatigue resistance compared to tin-lead eutectic or high-lead bumps and require higher Tg underfills for protection. However, the higher Tg underfill and the higher reflow temperature needed for lead-free bump assembly will increase die stress and package warpage. Since lower k dielectric materials have lower mechanical strength and lower adhesion than the dielectric materials used for prior silicon generations, the high stress induced by the lead-free assembly process and material set can cause delamination within the die, especially in devices with large die and large package sizes. In order to develop and qualify a reliable and robust lead-free package, care must be taken in the materials selection and optimization of the package structure. This paper discusses the effect of different factors such as underfill, substrate core, substrate pad structure, and lid design on package reliability of lead-free fine-pitch flip chip devices. It also reviews the assembly process related factors that impact the reliability of the lead-free bump and ultra low-k devices. Our studies show that a highly reliable lead-free package on organic substrate can be achieved for devices with large die and large package sizes. The reliability results for large die with different silicon nodes from 90 nm to 28 nm are presented.","PeriodicalId":6384,"journal":{"name":"2012 IEEE 62nd Electronic Components and Technology Conference","volume":"420 1","pages":"877-881"},"PeriodicalIF":0.0,"publicationDate":"2012-07-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"77028356","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 2

Integration of precision resistors and capacitors with near-zero temperature coefficients in silicon and organic packages 在硅和有机封装中集成具有接近零温度系数的精密电阻和电容器

2012 IEEE 62nd Electronic Components and Technology Conference Pub Date : 2012-07-30 DOI: 10.1109/ECTC.2012.6248943

P. Raj, K. Murali, S. Gandhi, R. Tummala, K. Slenes, N. Berg

引用次数: 1

Microfluidic thermal component for integrated microfluidic systems 集成微流控系统的微流控热元件

2012 IEEE 62nd Electronic Components and Technology Conference Pub Date : 2012-07-30 DOI: 10.1109/ECTC.2012.6249047

S. Babikian, Liang L. Wu, G. Li, M. Bachman

引用次数: 11

Electrical characterization of through silicon vias (TSVs) with an on chip bus driver for 3D IC integration 用于3D集成电路的片上总线驱动的硅通孔(tsv)的电气特性

2012 IEEE 62nd Electronic Components and Technology Conference Pub Date : 2012-07-30 DOI: 10.1109/ECTC.2012.6248933

S. Sheu, Z. H. Lin, C. S. Lin, J. Lau, S. H. Lee, K. Su, T. Ku, S. H. Wu, J. Hung, P. S. Chen, S. Lai, W. Lo, M. Kao

引用次数: 2

A novel U-shaped magnetic shield for perpendicular MRAM 垂直MRAM的新型u型磁屏蔽

2012 IEEE 62nd Electronic Components and Technology Conference Pub Date : 2012-07-30 DOI: 10.1109/ECTC.2012.6248945

T. Watanabe, S. Yamamichi

引用次数: 5

Hybrid Au-underfill resin bonding with lock-and-key structure 具有锁-钥匙结构的复合金填充树脂键合

2012 IEEE 62nd Electronic Components and Technology Conference Pub Date : 2012-07-30 DOI: 10.1109/ECTC.2012.6248837

M. Nimura, A. Shigetou, K. Sakuma, H. Ogino, T. Enomoto, J. Mizuno, S. Shoji

引用次数: 4

Small-aperture guided-mode-resonance filter with cavity resonators 带腔谐振器的小孔径导模谐振滤波器

2012 IEEE 62nd Electronic Components and Technology Conference Pub Date : 2012-07-30 DOI: 10.1109/ECTC.2012.6249036

S. Ura, T. Majima, K. Kintaka, K. Hatanaka, J. Inoue, K. Nishio, Y. Awatsuji

{"title":"Small-aperture guided-mode-resonance filter with cavity resonators","authors":"S. Ura, T. Majima, K. Kintaka, K. Hatanaka, J. Inoue, K. Nishio, Y. Awatsuji","doi":"10.1109/ECTC.2012.6249036","DOIUrl":"https://doi.org/10.1109/ECTC.2012.6249036","url":null,"abstract":"A cavity-resonator-integrated guided-mode-resonance filter (CRIGF) consisting of a grating coupler (GC) and a pair of distributed-Bragg-reflectors (DBRs) on a thin film waveguide has been recently proposed and investigated to provide a narrow-band reflection spectrum for an incident wave of a small beam width from the free space. A CRIGF demonstrated so far shows polarization dependence because propagation constants of guided waves excited by GC are different between TE and TM incident waves. In order to construct a polarization-independent guided-mode resonance filter with small aperture, an integration of two CRIGFs crossed each other was proposed and discussed in this paper. A device was designed for a resonance wavelength of 1550 nm and its reflection and transmission spectra were predicted by a newly developed analysis based on the coupled-mode theory. A reflectance of 96 % with 1 nm bandwidth was expected for an incident beam diameter of 10 μm. A test sample working at 846 nm was fabricated and characterized. A Ge:SiO2 guiding core layer was deposited on a SiO2 glass substrate, and GC and DBRs were formed by the electron-beam direct writing lithography. Measured reflection spectra for TE and TM incident beams were well coincident with each other.","PeriodicalId":6384,"journal":{"name":"2012 IEEE 62nd Electronic Components and Technology Conference","volume":"11 1","pages":"1511-1517"},"PeriodicalIF":0.0,"publicationDate":"2012-07-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"80143117","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1