在硅和有机封装中集成具有接近零温度系数的精密电阻和电容器

P. Raj, K. Murali, S. Gandhi, R. Tummala, K. Slenes, N. Berg
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引用次数: 1

摘要

本文报道了近零温度系数电阻(TCR)和零温度系数电容(TCC)电容器的新材料和工艺技术,并将其集成到精密射频元件的有机或硅封装中。本文首次提出了一种自补偿电阻器的新概念,该电阻器采用由金属层和半导体氧化层组成的非均质电阻器堆叠结构,可实现零TCR。零TCC电容器是由正TCC和负TCC的陶瓷纳米复合材料组成的薄膜堆。在这两种情况下,薄膜厚度的设计使得温度偏差有内部补偿,从而导致温度系数为零。建立了薄膜堆的材料模型,设计了零温度系数的薄膜。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Integration of precision resistors and capacitors with near-zero temperature coefficients in silicon and organic packages
This paper reports novel material and process technologies for near-zero Temperature-Coefficient Resistors (TCR) and zero temperature coefficient of capacitance (TCC) capacitors and their integration into organic or silicon packages for precision RF components. A new concept of self-compensating resistors, leading to zero TCR was explored and demonstrated for the first time, using heterogeneous resistor stack structures consisting of metal layers with positive TCR and semiconducting oxide layers with negative TCR. Zero TCC capacitors were demonstrated with a film-stack consisting of ceramic nanocomposites of positive TCC and negative TCC. In both cases, the film thickness was designed such that there is internal compensation in temperature deviation, which results in zero temperature-coefficient. Material models were developed for the film-stack to design the films for zero temperature-coefficient.
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