2013 IEEE 39th Photovoltaic Specialists Conference (PVSC)最新文献_第2页

600 mV epitaxial crystal silicon solar cells grown on seeded glass 在玻璃上生长的600毫伏外延晶硅太阳能电池

2013 IEEE 39th Photovoltaic Specialists Conference (PVSC) Pub Date : 2013-06-16 DOI: 10.1109/PVSC.2013.6744098

D. Young, C. Teplin, S. Grover, Benjamin G. Lee, Jihun Oh, V. LaSalvia, D. Amkreutz, S. Gall, Monica M Chahal, Greg J. Couillard, T. Chuang, J. Selj, M. Deceglie, H. Atwater, H. Branz, P. Stradins

引用次数: 5

Comprehensive validation of Carrier Collection Efficiency in multiple quantum well solar cells: For more effective and direct evaluation of carrier transport dynamics 多量子阱太阳能电池载流子收集效率的综合验证:为了更有效和直接地评估载流子输运动力学

2013 IEEE 39th Photovoltaic Specialists Conference (PVSC) Pub Date : 2013-06-16 DOI: 10.1109/PVSC.2013.6744146

H. Fujii, K. Toprasertpong, Kentaroh Watanabe, M. Sugiyama, Y. Nakano

引用次数: 2

Light Capturing Film on interconnect ribbon for current gain of crystalline silicon PV modules 用于晶体硅光伏组件电流增益的互连带上的光捕获膜

2013 IEEE 39th Photovoltaic Specialists Conference (PVSC) Pub Date : 2013-06-16 DOI: 10.1109/PVSC.2013.6744424

I. Chung, H.-Y. Son, H. Oh, Un-il Baek, Na-Ri Yoon, Won-jae Lee, E.-C. Cho, I. Moon

引用次数: 7

Low temperature manufacturing of Si nanocrystallites in the SiOx matrix applicable in solar cells 适用于太阳能电池的SiOx基硅纳米晶的低温制造

2013 IEEE 39th Photovoltaic Specialists Conference (PVSC) Pub Date : 2013-06-16 DOI: 10.1109/PVSC.2013.6744218

A. Kolodziej, T. Kolodziej, Michał Kołodziej

{"title":"Low temperature manufacturing of Si nanocrystallites in the SiOx matrix applicable in solar cells","authors":"A. Kolodziej, T. Kolodziej, Michał Kołodziej","doi":"10.1109/PVSC.2013.6744218","DOIUrl":"https://doi.org/10.1109/PVSC.2013.6744218","url":null,"abstract":"Progress in fabrication and application of the nanocrystalline silicon thin films in opto-electronic devices like solar cells, thin film transistors, memory cells, etc., is a way to further enhance their parameters. Those films exhibit increased stability, absorption, carrier mobility. They also exhibit scattering and anti-/reflection properties. This paper is focused on the technology of manufacturing such films by means of Radio Frequency Plasma Enhanced Chemical Vapor Deposition (RF PECVD). The authors describe the manufacturing process based on periodical variation of the process parameters, such as hydrogen to silane ratio (Rh), gas flows, RF power and pressure in the process chamber, during the deposition process. Additionally, the influence of chamber pre-annealing on resulting type of matrix with nanocrystalline inclusions, a-Si:H or SiOx, and differences between them are discussed. The authors also present the Secondary Ion Mass Spectrometry (SIMS) analyses and the measurements of typical samples with High Resolution Transmission Electron Microscopy (HRTEM), which confirms the existence of the nanocrystallites in the a-Si:H or SiOx matrix.","PeriodicalId":6350,"journal":{"name":"2013 IEEE 39th Photovoltaic Specialists Conference (PVSC)","volume":"3 1","pages":"0580-0585"},"PeriodicalIF":0.0,"publicationDate":"2013-06-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"79948961","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 2

Series resistance mapping of III-V multijunction solar cells based on luminescence imaging 基于发光成像的III-V型多结太阳能电池串联电阻映射

2013 IEEE 39th Photovoltaic Specialists Conference (PVSC) Pub Date : 2013-06-16 DOI: 10.1109/PVSC.2013.6744103

H. Nesswetter, Wilhelm Dyck, P. Lugli, A. Bett, C. Zimmermann

引用次数: 2

Front-side Ag contacts enabling superior recombination and fine-line performance 正面银触点可实现卓越的复合和细线性能

2013 IEEE 39th Photovoltaic Specialists Conference (PVSC) Pub Date : 2013-06-16 DOI: 10.1109/PVSC.2013.6744905

M. Burrows, A. Meisel, D. Balakrishnan, A. Tran, D. Inns, E. Kim, A. Carroll, K. Mikeska

{"title":"Front-side Ag contacts enabling superior recombination and fine-line performance","authors":"M. Burrows, A. Meisel, D. Balakrishnan, A. Tran, D. Inns, E. Kim, A. Carroll, K. Mikeska","doi":"10.1109/PVSC.2013.6744905","DOIUrl":"https://doi.org/10.1109/PVSC.2013.6744905","url":null,"abstract":"The standard silicon solar cell process continues on an evolutionary improvement path. High quality monocrystalline cells are now able to reach 19.2 % conversion efficiencies in industrial production. A key enabler for these high efficiencies has been the front-side Ag contact. This paper will discuss recent developments in this technology on two parallel fronts: reduced recombination and fine line printing. Front-side Ag can reduce solar cell recombination currents directly through reduced metal contact saturation current. In addition front-side Ag can indirectly lower recombination through improved contact formation to low saturation current emitters (lightly doped emitters, or LDE). Through improvements in the frit chemistry a superior recombination performance was enabled, yielding a 3 mV Voc gain and 0.1 % efficiency gain over the control. Improvements in the Ag particle dimensions and paste rheology reduced the optimum finger width approximately 10 μm, increasing Jsc by 0.3 mA/cm2 improving the efficiency gain another 0.1 % over the incumbent technology. In net we are able to demonstrate a next generation front-side Ag paste that can improve efficiency 0.2 %, from 18.8 % to 19.0 %.","PeriodicalId":6350,"journal":{"name":"2013 IEEE 39th Photovoltaic Specialists Conference (PVSC)","volume":"321 1","pages":"2171-2175"},"PeriodicalIF":0.0,"publicationDate":"2013-06-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"80247137","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 10

Reactive ion etching surface texturing of c-Si using silica nanosphere lithography technique for solar cell application 硅纳米球光刻技术在c-Si表面反应离子刻蚀变形中的应用

2013 IEEE 39th Photovoltaic Specialists Conference (PVSC) Pub Date : 2013-06-16 DOI: 10.1109/PVSC.2013.6744355

Jea-Young Choi, C. Honsberg

{"title":"Reactive ion etching surface texturing of c-Si using silica nanosphere lithography technique for solar cell application","authors":"Jea-Young Choi, C. Honsberg","doi":"10.1109/PVSC.2013.6744355","DOIUrl":"https://doi.org/10.1109/PVSC.2013.6744355","url":null,"abstract":"A reactive ion etching (RIE) process has been applied to etch diverse shape of nanoscale surface texturing on crystalline silicon (c-Si) for solar cell application. In this work, silica nanospheres (NS) were used as a mask material to utilize selective etching between silicon surface and silica NS for texturing. For effective silica NS deposition, we also developed our own solvent-control spin-coating method showing great monolayer coverage under common laboratory environment which is possibly more suitable for low-cost fabrication compared to conventional approach (moisture and temperature controlled spin-coating or dipping coating method by Langmuir-Blodgett trough). In RIE process, the surface texturing was etched with various shapes to reduce the reflectivity from surface, and the spectral response measurement confirms the effectiveness of RIE texturing which showed phenomenal anti-reflection effect with less than 2% of light reflection below 1.0 um wavelength. In addition, experiments for Quinhydrone/Methanol (QHY/ME) surface passivation for RIE textured surface were proceeded to evaluate RIE texturing effect for surface recombination velocity and minority carrier lifetime.","PeriodicalId":6350,"journal":{"name":"2013 IEEE 39th Photovoltaic Specialists Conference (PVSC)","volume":"37 1","pages":"1199-1202"},"PeriodicalIF":0.0,"publicationDate":"2013-06-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81548025","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 2

Electron spectroscopy of conduction electrons excited by visible light utilizing NEA surface 利用NEA表面研究可见光激发下的传导电子能谱

2013 IEEE 39th Photovoltaic Specialists Conference (PVSC) Pub Date : 2013-06-16 DOI: 10.1109/PVSC.2013.6744149

F. Ichihashi, D. Shimura, K. Nishitani, M. Kuwahara, T. Ito, S. Harada, M. Tagawa, T. Ujihara

引用次数: 2

Reliability of crystalline silicon photovoltaic laminates: Test development and finite element analysis 晶体硅光伏层压板的可靠性:测试开发和有限元分析

2013 IEEE 39th Photovoltaic Specialists Conference (PVSC) Pub Date : 2013-06-16 DOI: 10.1109/PVSC.2013.6745129

S. Athreya, Rahul Sharma, A. Lokhande, R. Feist, K. Kauffmann, L. López, M. Mills

{"title":"Reliability of crystalline silicon photovoltaic laminates: Test development and finite element analysis","authors":"S. Athreya, Rahul Sharma, A. Lokhande, R. Feist, K. Kauffmann, L. López, M. Mills","doi":"10.1109/PVSC.2013.6745129","DOIUrl":"https://doi.org/10.1109/PVSC.2013.6745129","url":null,"abstract":"The use of finite element analysis (FEA) and lab testing is gaining acceptance within the photovoltaic (PV) industry and is being increasingly used to “design-in” reliability into a product by investigating damage based on anticipated field conditions and environmental stressors. This paper presents a case study on the use of FEA to predict crystalline silicon (c-Si) cell fracture within a laminate subjected to bending loads (analogous to stepping loads during installation and loads experienced under rack-mounting and seasonal wind and snow conditions). Challenges related to development of a material model (that could be incorporated into the FE models) for c-Si cells are discussed. The use of electroluminescence (EL) as a diagnostic technique to detect fracture of c-Si cells within laminates is discussed. Finally, the use of in-situ Voc measurements during three-point bend testing in detecting failure events (in un-aged laminates and those aged under accelerated testing conditions) is also described. This could potentially be a new test method to investigate the effects of accelerated testing on the mechanical integrity of different parts of the electrical assembly such as the cells, weld and solder joints.","PeriodicalId":6350,"journal":{"name":"2013 IEEE 39th Photovoltaic Specialists Conference (PVSC)","volume":"42 1","pages":"3179-3184"},"PeriodicalIF":0.0,"publicationDate":"2013-06-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"86007042","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Preferential N-H bond orientation in GaAsN grown by chemical beam epitaxy 化学束外延生长的GaAsN中N-H键优先取向

2013 IEEE 39th Photovoltaic Specialists Conference (PVSC) Pub Date : 2013-06-16 DOI: 10.1109/PVSC.2013.6744886

K. Ikeda, M. Inagaki, N. Kojima, Y. Ohshita, M. Yamaguchi

引用次数: 0