600 mV epitaxial crystal silicon solar cells grown on seeded glass

D. Young, C. Teplin, S. Grover, Benjamin G. Lee, Jihun Oh, V. LaSalvia, D. Amkreutz, S. Gall, Monica M Chahal, Greg J. Couillard, T. Chuang, J. Selj, M. Deceglie, H. Atwater, H. Branz, P. Stradins
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引用次数: 5

Abstract

We report progress made at the National Renewable Energy Laboratory (NREL) on crystal silicon solar cells fabricated by epitaxially thickening thin silicon seed layers on glass using hot-wire chemical vapor deposition. Four micron thick devices grown on single-crystal silicon layer transfer seeds on glass achieved open circuit voltages (Voc) over 600 mV and efficiencies over 10%. Other devices were grown on laser crystallized mixed phase solidification (MPS) seeds on glass and e-beam crystallized (EBC) a-Si on SiC coated glass seeds. We discuss the material quality of the various devices on seeds and summarize the prospects for the seed and epitaxy PV approach.
在玻璃上生长的600毫伏外延晶硅太阳能电池
我们报告了国家可再生能源实验室(NREL)在晶体硅太阳能电池上取得的进展,该电池是用热线化学气相沉积法在玻璃上外延增厚薄硅种子层制成的。在单晶硅层上生长的4微米厚的器件在玻璃上实现了超过600 mV的开路电压(Voc)和超过10%的效率。其他器件分别生长在玻璃上的激光结晶混合相凝固(MPS)种子和SiC涂层玻璃上的电子束结晶(EBC) a-Si种子上。我们讨论了各种种子器件的材料质量,并总结了种子和外延光伏方法的发展前景。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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