2013 IEEE 39th Photovoltaic Specialists Conference (PVSC)最新文献

Combining design of experiments and power loss computations to study the screen printing process 结合实验设计和功率损耗计算对丝网印刷过程进行研究

2013 IEEE 39th Photovoltaic Specialists Conference (PVSC) Pub Date : 2013-06-16 DOI: 10.1109/PVSC.2013.6744932

S. Thibert, J. Jourdan, B. Bechevet, J. Faissat, S. Mialon, D. Chaussy, N. Reverdy-Bruas, D. Beneventi

引用次数: 2

Performance of utility interconnected photovoltaic inverters operating beyond typical modes of operation 公用事业互联光伏逆变器超出典型运行模式的性能

2013 IEEE 39th Photovoltaic Specialists Conference (PVSC) Pub Date : 2013-06-16 DOI: 10.1109/PVSC.2013.6745071

S. Gonzalez, J. Stein, A. Fresquez, M. Ropp, D. Schutz

引用次数: 6

The effect of rapid thermal annealing on the performance of CIGS cells with an ITO layer 快速热退火对ITO层CIGS电池性能的影响

2013 IEEE 39th Photovoltaic Specialists Conference (PVSC) Pub Date : 2013-06-16 DOI: 10.1109/PVSC.2013.6744340

Z. Li, R. Krishnan, G. Tong, R. Kaczynski, U. Schoop, T. Anderson

{"title":"The effect of rapid thermal annealing on the performance of CIGS cells with an ITO layer","authors":"Z. Li, R. Krishnan, G. Tong, R. Kaczynski, U. Schoop, T. Anderson","doi":"10.1109/PVSC.2013.6744340","DOIUrl":"https://doi.org/10.1109/PVSC.2013.6744340","url":null,"abstract":"Rapid thermal annealing studies were conducted on SS/Mo/CIGS/CdS/ITO/Ag devices as a function of anneal time in dry N2 in the temperature range 50 to 200°C, as well as in humidified N2 (85% RH) at 85°C. Interestingly, dry N2 annealing produced an enhancement in cell performance for low thermal budget, predominantly due to increased JSC, and to a lesser extent higher VOC. As examples, CIGS cell efficiency increased by 1.8±0.8% after annealing at 50°C for 300s and 2.0±2.3% when annealed at 100°C for 600s. At higher anneal temperature or longer time the cell performance deteriorated with significant decrease in FF and VOC. The results for the 85% RH at 85°C anneals were similar to the dry anneal studies but with less dramatic changes. Cell performance results after dark annealing indicate light-soaking effects induced by the lamp are not important at these relatively short anneal times. Measurement of quantum efficiency for the annealed samples supports the assumption that the buffer layer/absorber interface degrades at a relatively low temperature and that ITO degradation takes place at higher thermal budgets.","PeriodicalId":6350,"journal":{"name":"2013 IEEE 39th Photovoltaic Specialists Conference (PVSC)","volume":"90 1","pages":"1136-1141"},"PeriodicalIF":0.0,"publicationDate":"2013-06-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"75230759","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

CZTSe devices fabricated from CZTSSe nanoparticles 由CZTSSe纳米颗粒制备的CZTSe器件

2013 IEEE 39th Photovoltaic Specialists Conference (PVSC) Pub Date : 2013-06-16 DOI: 10.1109/PVSC.2013.6744994

B. Walker, Bethlehem G. Negash, Stephen M. Szczepaniak, Kevin Brew, R. Agrawal

引用次数: 2

MoSe2 formation during fabrication of Cu(In, Ga)Se2 solar cell absorbers by using stacked elemental layer precursor and selenization at high temperatures 利用叠置元素层前驱体和高温硒化法制备Cu(In, Ga)Se2太阳能电池吸收体过程中MoSe2的形成

2013 IEEE 39th Photovoltaic Specialists Conference (PVSC) Pub Date : 2013-06-16 DOI: 10.1109/PVSC.2013.6744990

S. Schmidt, C. Wolf, N. Papathanasiou, R. Schlatmann, C. Klimm, M. Klaus, C. Genzel, M. Billing, H. Schock

{"title":"MoSe2 formation during fabrication of Cu(In, Ga)Se2 solar cell absorbers by using stacked elemental layer precursor and selenization at high temperatures","authors":"S. Schmidt, C. Wolf, N. Papathanasiou, R. Schlatmann, C. Klimm, M. Klaus, C. Genzel, M. Billing, H. Schock","doi":"10.1109/PVSC.2013.6744990","DOIUrl":"https://doi.org/10.1109/PVSC.2013.6744990","url":null,"abstract":"Cu(In, Ga)Se2 solar cell absorbers are prepared on a Mo-coated glass substrate by using a sequential process consisting of a sputter deposition of an In/CuGa/In metal precursor, subsequent PVD deposition of a Se layer and annealing in N2 atmosphere. The Se concentration in the final layer stack was found to be relatively up to 20 % higher than expected. The excess Se is bound in a MoSe2 layer with laterally varying thickness, between the absorber and the Mo back contact. Such a layer can lead to an increase in the series resistance of the completed solar cells. By pumping at a specific time, we were able to reduce the Se partial pressure selectively during the selenization. For a constant annealing time, we find that the MoSe2 thickness increases with the time in which a high Se partial pressure is maintained, i.e., the time before the selective pumping. A significant reduction of the Se partial pressure after half the annealing time led to solar cells with the smallest series resistance and overall best conversion efficiency. We further found that the addition of NaF before the annealing led to comparatively thin MoSe2 layers. This suggests that the Na incorporation from the glass substrate in our process is too small to hinder the MoSe2 growth. A more specific control of the Na supply is required in our process to manipulate the MoSe2 growth and the doping density in the absorber.","PeriodicalId":6350,"journal":{"name":"2013 IEEE 39th Photovoltaic Specialists Conference (PVSC)","volume":"9 1","pages":"2528-2533"},"PeriodicalIF":0.0,"publicationDate":"2013-06-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"75787349","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 3

Conceptual product development with integrated concentrating PV systems — CPV in the built environment from a designer's perspective 集成聚光光伏系统的概念产品开发-从设计师的角度看建筑环境中的CPV

2013 IEEE 39th Photovoltaic Specialists Conference (PVSC) Pub Date : 2013-06-16 DOI: 10.1109/PVSC.2013.6744193

A. Reinders, M. Wiesenfarth, R. King

引用次数: 3

Comparison of different DC Arc spectra — Derivation of proposals for the development of an international arc fault detector standard 不同直流电弧光谱的比较。国际电弧故障检测器标准发展建议的推导

2013 IEEE 39th Photovoltaic Specialists Conference (PVSC) Pub Date : 2013-06-16 DOI: 10.1109/PVSC.2013.6744449

F. Reil, A. Sepanski, S. Raubach, M. Vosen, E. Dietrich

引用次数: 6

Fabrication of dye-sensitized solar cells with N-doped TiO2 thin films: Effect of the nitrogen doping on the photoexcitation processes and generation of electron acceptor states n掺杂TiO2薄膜制备染料敏化太阳能电池:氮掺杂对光激发过程和电子受体态生成的影响

2013 IEEE 39th Photovoltaic Specialists Conference (PVSC) Pub Date : 2013-06-16 DOI: 10.1109/PVSC.2013.6745030

D. A. Duarte, M. Massi, Argemiro Soares da Silva Sobrinho

引用次数: 1

Conversion efficiencies of six grid-tied inverters at the Tucson electric power solar test yard 图森电力太阳能试验场六个并网逆变器的转换效率

2013 IEEE 39th Photovoltaic Specialists Conference (PVSC) Pub Date : 2013-06-16 DOI: 10.1109/PVSC.2013.6745066

A. Brooks, J. Fijal, M. T. St. Germaine, Sean Orsburn, James B. Greenberg, V. Lonij, D. DellaGiustina, A. Cronin

引用次数: 3

Achievement of 15.1% total area efficiency on 1.09m2 monolithic CIGSeS modules in TSMC Solar production line 在台积电太阳能生产线1.09m2单片CIGSeS模块上实现15.1%的总面积效率

2013 IEEE 39th Photovoltaic Specialists Conference (PVSC) Pub Date : 2013-06-16 DOI: 10.1109/PVSC.2013.6744480

Sean Yang, Kwang-Ming Lin, Wen-Chin Lee, C. Lin, L. Chu

引用次数: 1