由CZTSSe纳米颗粒制备的CZTSe器件

B. Walker, Bethlehem G. Negash, Stephen M. Szczepaniak, Kevin Brew, R. Agrawal
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引用次数: 2

摘要

为了了解和控制由kesterite纳米颗粒制备的kesterite基ctse薄膜的生长路径,我们研究了初始纳米颗粒中不同硫族化物比例制备的薄膜。为此,我们介绍了一种新的方法,以控制硫和硒的比例来生产kesterite纳米晶体。最终的CZTSe器件由这些纳米颗粒制备,其总面积太阳能转换效率高达并超过8%(见图1)。所有由含硫硒化纳米颗粒制成的器件的效率均大于6%,而纯硒化纳米颗粒导致器件不良。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
CZTSe devices fabricated from CZTSSe nanoparticles
To understand and control the growth paths of kesterite based CZTSe films as prepared from kesterite nanoparticles we investigate films prepared from different chalcogenide ratios in the initial nanoparticles. To do so we introduce a new method for producing kesterite nanocrystals with controlled ratios of sulfur and selenium. Final CZTSe devices are prepared from these nanoparticles with total area solar power conversion efficiencies up to and exceeding eight percent (see Fig. 1). All devices made from selenizing nanoparticles that contained sulfur showed efficiency greater than six percent while pure selenide nanoparticles resulted in non-performing devices.
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