H. Nesswetter, Wilhelm Dyck, P. Lugli, A. Bett, C. Zimmermann
{"title":"基于发光成像的III-V型多结太阳能电池串联电阻映射","authors":"H. Nesswetter, Wilhelm Dyck, P. Lugli, A. Bett, C. Zimmermann","doi":"10.1109/PVSC.2013.6744103","DOIUrl":null,"url":null,"abstract":"A method for spatially resolved series resistance measurements of Ga0.5In0.5P/Ga(In)As/Ge triple-junction solar cells based on electro- and photoluminescence imaging is presented. The results gained from luminescence images of all three subcells clearly indicate the main contributions to the series resistance like interrupted gridfingers, the frontside metallization itself and the top cell emitter layer. Test cells with partially electron irradiated areas are used to demonstrate that the method is not sensitive to inhomogeneous dark I-V parameters.","PeriodicalId":6350,"journal":{"name":"2013 IEEE 39th Photovoltaic Specialists Conference (PVSC)","volume":"46 1","pages":"0076-0080"},"PeriodicalIF":0.0000,"publicationDate":"2013-06-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Series resistance mapping of III-V multijunction solar cells based on luminescence imaging\",\"authors\":\"H. Nesswetter, Wilhelm Dyck, P. Lugli, A. Bett, C. Zimmermann\",\"doi\":\"10.1109/PVSC.2013.6744103\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A method for spatially resolved series resistance measurements of Ga0.5In0.5P/Ga(In)As/Ge triple-junction solar cells based on electro- and photoluminescence imaging is presented. The results gained from luminescence images of all three subcells clearly indicate the main contributions to the series resistance like interrupted gridfingers, the frontside metallization itself and the top cell emitter layer. Test cells with partially electron irradiated areas are used to demonstrate that the method is not sensitive to inhomogeneous dark I-V parameters.\",\"PeriodicalId\":6350,\"journal\":{\"name\":\"2013 IEEE 39th Photovoltaic Specialists Conference (PVSC)\",\"volume\":\"46 1\",\"pages\":\"0076-0080\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2013-06-16\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2013 IEEE 39th Photovoltaic Specialists Conference (PVSC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/PVSC.2013.6744103\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 IEEE 39th Photovoltaic Specialists Conference (PVSC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/PVSC.2013.6744103","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Series resistance mapping of III-V multijunction solar cells based on luminescence imaging
A method for spatially resolved series resistance measurements of Ga0.5In0.5P/Ga(In)As/Ge triple-junction solar cells based on electro- and photoluminescence imaging is presented. The results gained from luminescence images of all three subcells clearly indicate the main contributions to the series resistance like interrupted gridfingers, the frontside metallization itself and the top cell emitter layer. Test cells with partially electron irradiated areas are used to demonstrate that the method is not sensitive to inhomogeneous dark I-V parameters.
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
